FMMTH10TC [DIODES]
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR;
| 型号： | FMMTH10TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 NOVEMBER 1995
FMMTH10
FEATURES
*
*
*
High fT=650MHz
E
Maximum capacitance 0.7pF
Low noise < 5dB at 500MHz
C
B
PARTMARKING DETAIL
3EZ
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCES
VALUE
UNIT
V
Collector-Emitter Voltage
30
Collector-Emitter Voltage
VCEO
VEBO
IC
25
V
Emitter-Base Voltage
3
25
V
Continuous Collector Current
Peak Pulse Current
mA
mA
mW
°C
ICM
50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
330
Tj:Tstg
= 25°C)
-55 to +150
amb
PARAMETER
Collector-Base Breakdown V(BR)CBO
Voltage
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
30
25
3
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
IC=1mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
Emitter-Base Breakdown
Voltage
V
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current
IEBO
100
0.5
nA
V
VEB=2V,IC=0
Collector-Emitter Saturation VCE(sat)
Voltage
IC=4mA, IB=0.4mA
Common Base Feedback
Capacitance
Crb
Typ.
0.45
0.65
0.95
pF
V
VCB=10V, IE=0
f=1MHz
Base-Emitter Turn-On
Voltage
VBE(on)
hFE
IC=4mA, VCE=10V
Static Forward Current
Transfer Ratio
60
IC=4mA, VCE=10V*
Transition Frequency
fT
650
MHz
pF
IC=4mA, VCE=10V, f=100MHz
VCB=10V, IE=0, f=1MHz
Collector Base Capacitance Ccb
Collector Base Time Constant rbCc
0.7
9
ps
IC=4mA, VCB=10V, f=31.8MHz
Noise Figure
Nf
Typ.
3
5
dB
IC=2mA, VCE=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 181
FMMTH10
TYPICAL CHARACTERISTICS
200
1.0
V
=-10V
V
=-10V
175°C
-55°C
0.8
0.6
150
100°C
25°C
100
100°C
25°C
0.4
0.2
175°C
-55°C
50
0
0
0.1
1
10
100
0.1
1
10
100
IC - (mA)
IC - (mA)
hFEv IC
VBE(on)v IC
1500
1000
500
1.2
V =10V
f=100MHz
1.0
0.8
0.6
0.4
0.2
0.1
1
10
100
0
0
0.1
1
10
30
IC - (mA)
VCB- (Volts)
CCBv VCB
fT v IC
3 - 182
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DIODES
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