MMBT4126-7-F [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMBT4126-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: MMBT4126
MMBT4126
Lead-free
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
SOT-23
Complementary NPN Type Available (MMBT4124)
Ideal for Low Power Amplification and Switching
Lead Free/RoHS Compliant (Note 2)
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
C
B
C
B
C
D
TOP VIEW
E
B
Mechanical Data
E
D
E
G
G
H
·
Case: SOT-23
H
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
J
J
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
K
L
Terminals: Solderable per MIL-STD-202, Method 208
M
C
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
a
All Dimensions in mm
·
·
·
Marking (See Page 2): K2B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-25
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-4.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-200
mA
mW
°C/W
°C
Pd
300
R
qJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
417
Tj, TSTG
-55 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30106 Rev. 7 - 2
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MMBT4126
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = -10mA, IE = 0
-25
-25
-4.0
¾
¾
¾
V
V
IC = -1.0mA, IB = 0
IE = -10mA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
¾
V
-50
-50
nA
nA
IEBO
Emitter Cutoff Current
¾
ON CHARACTERISTICS (Note 3)
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
120
60
360
¾
hFE
DC Current Gain
¾
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
-0.40
-0.95
V
V
¾
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
¾
¾
4.5
10
pF
pF
Input Capacitance
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
hfe
fT
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
120
250
¾
480
¾
¾
MHz
dB
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
NF
4.0
(Note 4)
Ordering Information
Device
Packaging
Shipping
MMBT4126-7-F
SOT-23
3000/Tape & Reel
Note: 3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
K2B
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011 2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30106 Rev. 7 - 2
2 of 4
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MMBT4126
100
400
350
300
250
Note 1
f = 1MHz
10
200
150
Cibo
100
50
Cobo
1
0
1
0.1
100
10
200
0
175
25
50
150
75 100 125
V
, COLLECTOR-BASE VOLTAGE (V)
CB
T , AMBIENT TEMPERATURE (°C)
A
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
10
IC
= 10
IB
T
A
= 125°C
1
100
T
A
= +25°C
T
A
= -25°C
0.1
10
VCE = 1.0V
0.01
1
10
I , COLLECTOR CURRENT (mA)
1
100
1000
1
1000
10
0.1
100
I , COLLECTOR CURRENT (mA)
C
C
Fig. 3, Typical DC Current Gain vs
Collector Current
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
I
C
= 10
I
B
0.5
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30106 Rev. 7 - 2
3 of 4
MMBT4126
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IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodes Incorporated and all thecompanies whoseproducts arerepresentedonour website, harmless againstall damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President ofDiodes Incorporated.
DS30106 Rev. 7 - 2
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MMBT4126
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