ZDT749 [DIODES]
SM-8 DUAL PNP MEDIUM POWER; SM - 8 DUAL PNP中功率
| 型号： | ZDT749 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SM-8 DUAL PNP MEDIUM POWER |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
ZDT749
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
PARTMARKING DETAIL T749
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-35
-25
V
-5
V
Peak Pulse Current
-6
-2
A
Continuous Collector Current
IC
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 351
ZDT749
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -35
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
V(BR)EBO -5
ICBO
V
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
IE=-100µA, IC=0
Collector Cutoff
Current
-0.1
-10
VCB=-30V
VCB=-30V,T
µA
µA
=100°C
Emitter Cutoff Current IEBO
-0.1
VEB=-4V, IE=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.12
-0.23
-0.3
-0.5
V
V
IC=1A, IB=-100mA*
IC=2A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-0.8
-1.25
-1
V
V
IC=1A, IB=-100mA*
IC=-1A, VCE=-2V*
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current hFE
Transfer Ratio
70
100
75
200
200
150
50
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
300
100
15
Transition Frequency
fT
100
160
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
55
pF
ns
ns
VCB=-10V f=1MHz
40
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 352
ZDT749
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
Switching Speeds
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I
- Collector Current (Amps)
VBE(on) v IC
3 - 353
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