ZXM64P03XTC [DIODES]
30V P-CHANNEL ENHANCEMENT MODE MOSFET; 30V P沟道增强型MOSFET
| 型号： | ZXM64P03XTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
MSOP8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Pin out
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
1
S
S
D
D
ZXM64P03XTA
ZXM64P03XTC
7
12 embossed
12 embossed
1,000
4,000
S
D
D
G
13
DEVICE MARKING
ZXM4P03
Top view
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
1
ZXM64P03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-Source Voltage
V
V
V
V
DSS
GS
Gate- Source Voltage
Ϯ20
Continuous Drain Current
(V =4.5V; T =25°C)(b)
I
-3.8
-3.0
A
GS
A
D
(V =4.5V; T =70°C)(b)
GS
A
Pulsed Drain Current (c)
I
I
I
-19
-2.3
-19
A
A
A
DM
S
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
SM
Power Dissipation at T =25°C (a)
P
1.1
8.8
W
mW/°C
A
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
P
1.8
14.4
W
mW/°C
A
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
NOTES:
R
R
θJA
θJA
70
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXM64P03X
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
3
ZXM64P03X
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-30
V
I =-250µA, V =0V
(BR)DSS
D
GS
I
-1
V
=-30V, V =0V
DS GS
µA
nA
V
DSS
I
100
V
= 20V, V =0V
GS DS
GSS
Gate-Source Threshold Voltage
V
-1.0
2.3
I =-250µA,
GS(th)
D
V
= V
GS
DS
Static Drain-Source On-State Resistance
(1)
R
0.075
0.100
V
V
=-10V, I =-2.4A
D
Ω
Ω
DS(on)
GS
GS
=-4.5V, I =-1.2A
D
Forward Transconductance (3)
DYNAMIC (3)
g
S
V
=-10V,I =-1.2A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
825
250
80
pF
pF
pF
iss
V
=-25 V, V =0V,
DS
GS
oss
rss
f=1MHz
t
t
t
t
4.4
6.2
40
ns
ns
ns
ns
d(on)
r
V
=-15V, I =-2.4A
D
DD
G
R =6.2Ω, R =6.2Ω
(Refer to test
circuit)
Turn-Off Delay Time
Fall Time
D
d(off)
f
29.2
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Q
Q
Q
46
9
nC
nC
g
V
=-24V,V =-10V,
GS
DS
gs
gd
ID=-2.4A
(Refer to test
circuit)
11.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.95
V
T =25°C, I =-2.4A,
j S
GS
SD
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
NOTES:
t
30.2
27.8
ns
T =25°C, I =-2.4A,
j F
di/dt= 100A/µs
rr
Q
nC
rr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
ZXM64P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
5
ZXM64P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
6
ZXM64P03X
PACKAGE DETAILS
PAD LAYOUT DETAILS
c
e
1.02
0.040
E1
E
4.8
0.189
R1
D
mm
inches
L
R
A
A2
0.41
0.65
0.023
0.016
A1
b
PACKAGE DIMENSIONS
DIM
Millimeters
MIN MAX
1.11
Inches
MIN
MAX
0.044
0.008
0.014
A
A1
B
0.91
0.10
0.25
0.13
2.95
0.036
0.004
0.010
0.005
0.116
0.20
0.36
C
0.18
3.05
0.65NOM
0.33NOM
2.95 3.05
5.03
0.007
0.120
0.0256
0.0128
0.116
0.188
0.016
0°
D
e
e1
E
0.120
0.198
0.026
6°
H
L
4.78
0.41
0°
0.66
6°
°
© Zetex Semiconductors plc 2005
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For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
7
1
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