ZXM66P02N8 [DIODES]
20V P-CHANNEL ENHANCEMENT MODE MOSFET; 20V P沟道增强型MOSFET
| 型号： | ZXM66P02N8 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总5页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
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•
•
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High pulse current handling in linear mode
Low on-resistance
V(BR)DSS
RDS(on)
ID
Fast switching speed
-20V
-8.0A
0.025Ω
Low gate drive
Low profile SOIC package
Description and Applications
Mechanical Data
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
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Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
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•
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Inrush protection circuits
DC-DC Converters
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Power management functions
Disconnect switches
Motor control
•
Weight: 0.074 grams (approximate)
D
SO-8
G
S
Top View
Top View
Equivalent Circuit
Ordering Information (Note 1)
Product
Marking
See below
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXM66P02N8TA
7
12
500
Notes:
1. For packaging details, go to our website.
Marking Information
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM
66P02
YYWW
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www.diodes.com
October 2009
© Diodes Incorporated
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXM66P02N8
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Symbol
VDSS
Value
-20
Unit
V
V
VGS
±12
-8.0
-6.5
-6.4
-28
(Note 3)
Continuous Drain current
Pulsed Drain current
A
V
GS = 4.5V
TA = 70°C (Note 3)
(Note 2)
(Note 4)
ID
A
A
A
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
-4.15
-28
(Note 4)
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.56
12.5
2.5
Unit
(Note 2)
W
mW/°C
Power dissipation
Linear derating factor
PD
(Note 3)
20
(Note 2)
Thermal Resistance, Junction to Ambient
(Note 3)
Operating and storage temperature range
80
50
°C/W
°C
Rθ
JA
-55 to 150
TJ, TSTG
Notes:
2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Same as note (3), except the device is measured at t ≤ 10 sec.
4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs – pulse width limited by maximum junction temperature.
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-20
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1
ID = -250μA, VGS = 0V
VDS = -16V, VGS = 0V
μA
nA
-100
IGSS
⎯
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-0.7
V
VGS(th)
⎯
⎯
⎯
0.025
0.045
⎯
ID = -250μA, VDS = VGS
V
V
GS = -4.5V, ID = -3.2A
GS = -2.5V, ID = -2.7A
Static Drain-Source On-Resistance (Note 5)
Ω
RDS (ON)
⎯
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
13.3
⎯
S
V
gfs
VSD
trr
⎯
⎯
VDS = -10V, ID = -3.2A
IS = -3.2A, VGS = 0V
0.95
⎯
23.1
12.2
ns
nC
IF = -3.2A, di/dt = 100A/μs
Qrr
⎯
⎯
2068
1038
506
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -15V, VGS = 0V
F = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
43.3
3.5
V
GS = -4.5V, VDS = -10V,
Qgs
Qgd
tD(on)
tr
ID = -3.2A
21.3
14.0
44.3
118.4
98.4
VDD = -10V, VGS = -5V
ID = -3.2A, RG = 6.0Ω
tD(off)
tf
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
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www.diodes.com
October 2009
© Diodes Incorporated
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXM66P02N8
Typical Characteristics
10V
4.5V
4.5V
T = 150°C
2V
T = 25°C
10
10V
2.5V
2.5V
2V
10
1
1.5V
-VGS
1
1.5V
-VGS
0.1
0.01
1V
0.1
0.1
0.1
1
-VDS Drain-Source Vo1ltage (V)
-VDS Drain-Source Voltage1(0V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
VGS = -4.5V
ID = - 3.2A
1
0.1
RDS(on)
T = 150°C
T = 25°C
VGS(th)
0.01
1E-3
VGS = VDS
-VDS = 10V
ID = -250uA
500.0m
1.0
1.5
2.0
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
1.5V
T = 25°C
2V
10
-VGS
1
0.1
1
0.1
T = 150°C
2.5V
T = 25°C
0.01
4.5V
10V
1E-3
0.01
0.2
0.4
0.6
0.8
1.0
0.1
1
10
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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October 2009
© Diodes Incorporated
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXM66P02N8
Package Outline Dimensions
θ
DIM
Inches
Min. Max.
Millimeters
DIM
Inches
Min. Max.
Millimeters
Max.
Min.
1.35
0.10
4.80
5.80
3.80
0.40
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
A
A1
D
0.053 0.069
0.004 0.010
0.189 0.197
0.228 0.244
0.150 0.157
0.016 0.050
e
b
c
θ
h
-
0.050 BSC
0.013 0.020
0.008 0.010
1.27 BSC
0.33
0.19
0°
0.51
0.25
8°
H
0°
8°
E
0.010 0.020
0.25
-
0.50
-
L
-
-
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
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October 2009
© Diodes Incorporated
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXM66P02N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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October 2009
© Diodes Incorporated
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
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