ZXM66N03N8 [ZETEX]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | ZXM66N03N8 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXM66N03N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS=30V; RDS(ON)=0.015
D=9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
D
D
D
S
S
S
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM66N03N8TA
13
12mm embossed
1000 units
Top View
DEVICE MARKING
•
ZXM6
6N03
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
ZXM66N03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
LIMIT
30
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
A
VGS
±20
Continuous Drain Current (VGS=10V; TA=25°C)(b)(d) ID
(VGS=10V; TA=70°C)(b)(d)
9.0
8.0
Pulsed Drain Current (c)(d)
IDM
35
3.1
35
A
A
A
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
IS
ISM
PD
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
-
-
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
-
-
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.5
20
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
-
RθJA
50
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
ZXM66N03N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS 30
IDSS
V
ID=250µA, VGS=0V
1
VDS=24V, VGS=0V
µA
nA
V
IGSS
100
V
GS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
1.0
12
ID=250µA, VDS= VGS
Static Drain-Source On-State Resistance
(1)
0.015
0.020
VGS=10V, ID=7.3A
Ω
Ω
V
GS=4.5V, ID=3.7A
Forward Transconductance (3)
DYNAMIC (3)
gfs
S
VDS=15V,ID=3.7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
-
-
-
pF
pF
pF
V
DS=15 V, VGS=0V,
f=1MHz
td(on)
tr
td(off)
tf
-
-
-
-
ns
ns
ns
ns
nC
nC
nC
VDD =15V, ID=7.3A
RG=6.0Ω, RD=2.0Ω
(Refer to test circuit)
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
-
-
-
V
DS=15V,VGS=10V
Qgs
Qgd
ID=7.3A
(Refer to test circuit)
VSD
0.95
V
Tj=25°C, IS=7.3A,
V
GS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
trr
-
-
ns Tj=25°C, IF=7.3A,
di/dt= 100A/µs
Qrr
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
ZXM66N03N8
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 2000
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
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