ZXMHC10A07N8TC [DIODES]
100V SO8 Complementary enhancement mode MOSFET H-Bridge; 100V SO8互补增强型MOSFET的H桥
| 型号： | ZXMHC10A07N8TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V SO8 Complementary enhancement mode MOSFET H-Bridge |
| 文件： | 总11页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMHC10A07N8
100V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
ID
Device
V(BR)DSS
QG
RDS(on)
TA= 25°C
0.70Ω @ VGS= 10V
0.90Ω @ VGS= 6.0V
1.00Ω @ VGS= -10V
1.45Ω @ VGS= -6.0V
1.0A
N-CH
100V
2.9nC
0.9A
-0.9A
-0.7A
P-CH
-100V
3.5nC
P1S/P2S
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P1G
P2G
Features
P1D/N1D
P2D/N2D
•
2 x N + 2 x P channels in a SOIC package
Applications
N1G
N2G
•
DC Motor control
DC-AC Inverters
•
N1S/N2S
Ordering information
Device
Reel size Tape width Quantity
(inches)
(mm)
per reel
ZXMHC10A07N8TC
13
12
2,500
Device marking
ZXMHC
10A07
Issue 1.0 - March 2009
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ZXMHC10A07N8
Absolute maximum ratings
Parameter
Symbol
N-
P-
Unit
channel channel
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
100
-100
V
V
±20
±20
(b)
(b)
(a)
(f)
1.00
0.80
0.80
0.81
-0.85
-0.68
-0.68
-0.69
A
ID
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
(c)
IDM
4.30
0.70
4.30
-3.64
-0.60
-3.64
A
A
A
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
Continuous Source current (Body diode) at TA =25°C
IS
(c)
Pulsed Source current (Body diode) at TA =25°C
ISM
PD
(a)
0.87
6.94
1.36
10.9
0.90
7.19
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(b)
W
mW/°C
Power dissipation at TA =25°C
P
D
P
D
Linear derating factor
(f)
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
(a)
R
θJA
144
Junction to ambient
(b)
R
θJA
92
Junction to ambient
(d)
R
θJA
106
254
139
Junction to ambient
(e)
R
θJA
Junction to ambient
(f)
R
θJL
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(b) Same as note (a), except the device is measured at t ≤ 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
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ZXMHC10A07N8
Thermal characteristics
10
10
1
RDS(ON)
RDS(ON)
Limited
1
Limited
DC
DC
1s
100m
100m
10m
1s
100ms
100ms
10ms
Note (a)
Note (a)
10ms
1ms
1ms
10m
Single Pulse, Tamb=25°C
Single Pulse, Tamb=25°C
100us
100us
1
10
100
1
10
100
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
1.0
140
One Active Die
25 x 25mm 1oz
120
100
Any one
active die
D=0.5
80
0.5
60
Single Pulse
D=0.05
D=0.1
10
D=0.2
40
20
0
0.0
100µ 1m 10m 100m
1
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
One Active Die
Single Pulse
Tamb=25°C
100
10
1
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMHC10A07N8
N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
100
V
V(BR)DSS
ID = 250μA, VGS= 0V
DS= 100V, VGS= 0V
Zero Gate voltage Drain
current
IDSS
0.5
µA
nA
V
IGSS
Gate-Body leakage
±100
VGS= ±20V, VDS= 0V
ID= 250μA, VDS= VGS
VGS= 10V, ID= 1.5A
Gate-Source threshold
voltage
VGS(th)
2.0
4.0
V
Static Drain-Source
0.7
0.9
RDS(on)
(a)
Ω
on-state resistance
VGS= 6.0V, ID= 1.0A
Forward
gfs
(a) (c)
1.6
S
VDS= 15V, ID= 1.0A
Transconductance
Dynamic
(c)
Capacitance
138
12
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= 60V, VGS= 0V
Coss
f= 1MHz
Reverse transfer
capacitance
Crss
6
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
1.8
1.5
4.1
2.1
ns
ns
ns
ns
td(on)
tr
td(off)
tf
V
DD= 50V, VGS= 10V
ID= 1.0A
Turn-off delay time
Fall time
RG ≅ 6.0Ω,
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
2.9
0.7
1.0
nC
nC
nC
Qg
V
DS=50V, VGS= 10V
Qgs
Qgd
ID= 1.0A
(a)
IS= 1.5A, VGS= 0V
Diode forward voltage
0.95
V
VSD
trr
(c)
27
12
ns
nC
Reverse recovery time
IS= 1.8A, di/dt= 100A/μs
(c)
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
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ZXMHC10A07N8
N-channel typical characteristics
10V
7V
10V
7V
T =150°C
T =25°C
6V
6V
5V
1
0.1
1
0.1
5V
4.5V
4.5V
4V
VGS
VGS
0.01
3.5V
4V
0.01
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS =10V
ID =1.5A
1
0.1
RDS(on)
T =150°C
VGS(th)
T =25°C
VGS =VDS
ID =250uA
VDS =10V
0.01
3
4
5
6
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
10
4.5V
6V
5V
VGS
T =150°C
1
1
7V
T =25°C
10V
0.1
T =25°C
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
VSD Source-Drain Voltage (V)
ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXMHC10A07N8
N-channel typical characteristics –continued
200
10
8
VGS =0V
f =1MHz
180
160
140
120
100
80
ID =1.0A
6
VDS =50V
CISS
COSS
4
CRSS
60
40
2
20
0
0
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMHC10A07N8
P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-100
V
V(BR)DSS
ID = -250μA, VGS= 0V
DS= -100V, VGS= 0V
Zero Gate voltage Drain
current
IDSS
-0.5
µA
nA
V
IGSS
Gate-Body leakage
±100
VGS= ±20V, VDS= 0V
ID= -250μA, VDS= VGS
VGS= -10V, ID= -0.6A
Gate-Source threshold
voltage
VGS(th)
-2.0
-4.0
V
Static Drain-Source
1.0
RDS(on)
(a)
Ω
on-state resistance
VGS= -6.0V, ID= -0.5A
1.45
Forward
gfs
(a) (c)
1.2
S
VDS= -15V, ID= -0.6A
Transconductance
Dynamic
(c)
Capacitance
141
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= -50V, VGS= 0V
Coss
13.1
f= 1MHz
Reverse transfer
capacitance
Crss
10.8
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
1.6
2.1
5.9
3.3
ns
ns
ns
ns
td(on)
tr
td(off)
tf
V
DD= -50V, VGS= -10V
ID= -1.0A
Turn-off delay time
Fall time
RG ≅ 6.0Ω
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
3.5
0.6
1.6
nC
nC
nC
Qg
V
DS= -50V, VGS= -10V
Qgs
Qgd
ID= -0.6A
(a)
IS= -0.7A, VGS= 0V
Diode forward voltage
-0.85
29
-0.95
V
VSD
trr
(c)
ns
nC
Reverse recovery time
IS= -0.9A, di/dt= 100A/μs
(c)
31
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
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ZXMHC10A07N8
P-channel typical characteristics
10
10
1
10V
7V
10V
7V
T = 150°C
T = 25°C
5V
4.5V
4V
5V
1
0.1
4.5V
4V
3.5V
0.1
3.5V
-VGS
3V
0.01
1E-3
0.01
1E-3
-VGS
0.1
1
10
0.1
1
10
-V
Drain-Source Voltage (V)
-V
Drain-Source Voltage (V)
DS
DS
Output Characteristics
Output Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = -10V
ID = - 0.6A
1
0.1
T = 150°C
RDS(on)
T = 25°C
VGS(th)
VGS = VDS
-VDS = 10V
ID = -250uA
0.01
3
4
5
-50
0
50
100
150
-V
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
10
3.5V
-VGS
4V
T = 25°C
100
10
1
T = 150°C
1
4.5V
5V
T = 25°C
0.1
7V
10V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
-V
Source-Drain Voltage (V)
-I Drain Current (A)
SD
D
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXMHC10A07N8
P-channel typical characteristics –continued
10
8
VGS = 0V
ID = -0.6A
200
f = 1MHz
150
CISS
6
COSS
CRSS
100
4
50
2
VDS = -50V
0
0.1
0
1
10
100
0
1
2
3
4
-V - Drain - Source Voltage (V)
Q - Charge (nC)
DS
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
50k
Same as
D.U.T
0.2F
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
Pulse width Ͻ 1S
Duty factor 0.1%
tr
td(off)
tr
td(on)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMHC10A07N8
Packaging details - SO8
DIM
Inches
Min.
Millimeters
DIM
Inches
Millimeters
Max.
1.27 BSC
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
Min.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
θ
-
0.050 BSC
0.013
0.020
0.33
0.51
0.008
0.010
0.19
0.25
H
0°
-
8°
-
0°
-
8°
E
-
-
L
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMHC10A07N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
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other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
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without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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相关型号：
ZXMHC10A07T8TC
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SM8, 8 PIN
ZETEX
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