ZXMN4A06KTC [DIODES]
40V N-channel enhancement mode MOSFET; 40V N沟道增强型MOSFET
| 型号： | ZXMN4A06KTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：559K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V
= -40V; R
= 0.05ꢀ; I = 10.9A
DS(ON) D
(BR)DSS
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
DPAK package
Applications
•
•
•
•
DC - DC converters
Audio output stages
Relay and solenoid driving
Motor control
Ordering information
Device
Reel size Tape width Quantity
(inches)
(mm)
per reel
ZXMN4A06KTC
13
16
2,500
Device marking
Pinout - Top view
ZXMN
4A06
Issue 1 - March 2006
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ZXMN4A06K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
40
V
DSS
GS
Gate-source voltage
V
ꢁ20
V
Continuous drain current:
(b)
10.9
8.7
A
A
A
V
V
V
=10V; T =25°C
A
GS
GS
GS
I
D
(b)
(a)
=10V; T =70°C
A
7.2
=10V; T =25°C
A
(c)
I
I
35.3
10.8
A
A
DM
Pulsed drain current
Continuous source current (body diode)
S
(b)
(c)
I
35.3
A
Pulsed source current (body diode)
SM
(a)
P
P
P
4.2
33.6
W
mW/°C
Power dissipation at T =25°C
Linear derating factor
D
D
D
A
(b)
(d)
9.5
76
W
mW/°C
Power dissipation at T =25°C
A
Linear derating factor
2.15
17.2
W
mW/°C
Power dissipation at T =25°C
A
Linear derating factor
Operating and storage temperature range T :T
-55 to +150
°C
j
stg
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
R
R
R
30
°C/W
Junction to ambient
ꢂJA
ꢂJA
ꢂJA
(b)
13.2
58
°C/W
°C/W
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
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ZXMN4A06K
Characteristics
Issue 1 - March 2006
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ZXMN4A06K
Electrical characteristics (at T = 25°C unless otherwise stated)
A
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-source breakdown
voltage
V
40
V
I =250ꢃA, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
1
ꢃA
nA
V
V
=40V, V =0V
GS
DSS
DS
Gate-body leakage
I
100
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold voltage V
1.0
I =250ꢃA, V = V
D DS GS
GS(th)
Static drain-source on-state
R
0.050
0.075
ꢀ
V
=10V, I =4.5A
D
DS(on)
GS
GS
DS
(*)
resistance
ꢀ
V
V
=4.5V, I =3.2A
D
(‡)
g
11.5
S
=15V,I =4.5A
D
Forward transconductance
fs
(‡)
Dynamic
Input capacitance
C
C
C
827
133
84
pF
pF
pF
iss
V
=20 V, V =0V,
GS
DS
Output capacitance
oss
rss
f=1MHz
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on delay time
Rise time
t
t
t
t
3.2
3.8
ns
ns
ns
ns
nC
nC
nC
d(on)
r
V
=20V, I =1A
D
DD
Turn-off delay time
Fall time
23.3
10.9
17.1
2.41
3.4
R =6.0ꢀ, V =10V
(refer to test circuit)
d(off)
f
G
GS
Total gate charge
Gate-source charge
Gate-drain charge
Q
Q
Q
g
V
=20V,V =10V,
DS
GS
gs
gd
I =4.5A
D
(refer to test circuit)
Source-drain diode
(*)
V
0.83
0.95
V
T =25°C, I =4.5A,
J S
SD
Diode forward voltage
V
=0V
GS
(†)
16
9
ns
T =25°C, I =4A,
J F
di/dt= 100A/ꢃs
Reverse recovery time
t
rr
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Width ꢄ300ꢃs. Duty cycle ꢄ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
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ZXMN4A06K
Typical charactersitics
Issue 1 - March 2006
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ZXMN4A06K
Typical characteristics
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
Issue 1 - March 2006
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ZXMN4A06K
Intentionally left blank
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
7
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ZXMN4A06K
Package details - DPAK
Package dimensions
Dim.
Inches
Min.
0.086
-
Millimeters
Dim.
Inches
Min. Max.
0.090 BSC
Millimeters
Max.
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
-
Min.
2.18
-
Max.
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
-
Min.
Max.
A
A1
b
b2
b3
c
c2
D
D1
E
e
H
L
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L1
L2
L3
L4
L5
ꢂ1°
ꢂ°
-
0.108 REF
0.020 BSC
2.74 REF
0.508 BSC
0.035
0.065
0.040
0.060
10°
0.89
1.65
1.016
1.52
10°
0.025
0.045
0°
0.635
1.14
0°
0.265
-
6.73
-
0°
15°
0°
15°
E1
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
8
www.zetex.com
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