ZXTD2090E6TA [DIODES]
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR; 双50V NPN硅低饱和开关晶体管
| 型号： | ZXTD2090E6TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
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Case: SOT23-6
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.018 grams (approximate)
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•
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BVCEO = 50V
SAT = 160mV
IC = 1A Continuous Collector Current
Low Equivalent On Resistance
Low Saturation Voltage
SOT23-6 package
Lead, Halogen and Antimony Free, RoHS Compliant
(Note 1)
R
•
“Green” Devices (Note 2)
Applications
•
•
LCD Backlighting inverter circuits
Boost functions in DC-DC converters
SOT-223
Top View
Device symbol
Pin Configuration
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTD2090E6TA
2090
7
8
3000
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com.
Marking Information
2090 = Product type Marking Code
1 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
50
50
5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current (Note 5)
Base current
1
A
200
2
mA
A
IB
Peak Pulse Current
ICM
Thermal Characteristics
Characteristic
Symbol
Value
0.90
7.2
Unit
W
mW /°C
W
mW /°C
W
mW /°C
Power Dissipation at TA = 25°C (Notes 3 & 6)
PD
Linear derating factor
1.1
8.8
Power Dissipation at TA = 25°C (Notes 3 & 7)
PD
PD
Linear derating factor
1.7
13.6
Power Dissipation at TA = 25°C (Notes 4 & 6)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 3 & 6)
Thermal Resistance, Junction to Ambient (Notes 4 & 6)
Thermal Resistance, Junction to Ambient (Notes 3 & 7)
Operating and Storage Temperature Range
139
73
°C/W
°C/W
°C/W
°C
Rθ
Rθ
Rθ
JA
JA
JA
113
-55 to +150
TJ, TSTG
Notes:
3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. For a device surface mounted on FR4 PCB measured at < 5sec
5. Repetitive rating – pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph
6. For a device with one active die
7. For a device with two die running at equal power
2 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
50
50
5
Typ
Max
Unit
V
Test Condition
IC = 100µA
V
IC = 10mA
IE = 100µA
VCB = 40V
VCES = 40V
VEB = 4V
V
10
10
10
nA
nA
nA
Collector-Emitter Cutoff Current
Emitter Cutoff Current
ICES
IEBO
I
I
C = 10mA, VCE = 2V
C = 100mA, VCE = 2V
200
300
200
75
420
450
350
130
60
DC Current Gain (Note 8)
hFE
IC = 500mA, VCE = 2V
C = 1A, VCE = 2V
I
20
IC = 1.5A, VCE = 2V
IC = 100mA, IB = 10mA
24
60
120
160
35
80
200
270
mV
mV
mV
mV
I
C = 250mA, IB = 10mA
IC = 500mA, IB = 10mA
C = 1A, IB = 50mA
Collector-Emitter Saturation Voltage (Note 8)
VCE(SAT)
I
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
Output Capacitance
940
850
10
1100
1100
mV
mV
pF
VBE(sat)
VBE(ON)
Cobo
IC = 1A, IB = 50mA
IC = 1A, VCE = 2V
VCB = 10V. f = 1MHz
V
CE = 10V, IC = 50mA
Current Gain-Bandwidth Product
215
MHz
fT
f = 100MHz
Turn-On Time
Turn-Off Time
150
425
ns
ns
ton
toff
V
CC = 10V, IC = 1A
IB1 = -IB2 = 100mA
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
3 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Typical Characteristics
4 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Package Outline Dimensions
Suggested Pad Layout
5 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
6 of 6
www.diodes.com
August 2009
© Diodes Incorporated
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
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