ZXTD2M832TA [ZETEX]

MPPS Miniature Package Power Solutions DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR; MPPS微型封装的电源解决方案双路20V PNP低饱和开关晶体管


型号：	ZXTD2M832TA
厂家：	ZETEX SEMICONDUCTORS
描述：	MPPS Miniature Package Power Solutions DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR MPPS微型封装的电源解决方案双路20V PNP低饱和开关晶体管晶体开关小信号双极晶体管
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ZXTD2M832

MPPS™ Miniature Package Power Solutions

DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

CEO

= -20V; R

= 64m ; I = -3.5A

SAT C

DESCRIPTION

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package)

outline, these new 4^thgeneration low saturation dual transistors offer

extremely low on state losses making them ideal for use in DC-DC circuits

and various driving and power management functions.

Additionally users gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (nom 0.9mm)

3mm x 2mm (Dual die) MLP

Reduced component count

FEATURES

•

Low Equivalent On Resistance

•

Extremely Low Saturation Voltage (-220mV @ -1A)

•

characterised up to -6A

= -3.5A Continuous Collector Current

3mm x 2mm MLP

APPLICATIONS

•

DC - DC Converters (FET Drivers)

Charging circuits

Power switches

PINOUT

Motor control

LED Backlighting circuits

ORDERING INFORMATION

DEVICE

REEL

TAPE

WIDTH

QUANTITY

PER REEL

ZXTD2M832TA

ZXTD2M832TC

؅؅

8mm

3000

10000

3mm x 2mm MLP

underside view

DEVICE MARKING

D22

ISSUE 1 - JUNE 2002

ZXTD2M832

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

-25

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

-20

-7.5

-6

Peak Pulse Current

Continuous Collector Current (a)(f)

Base Current

-3.5

-1000

Power Dissipation at TA=25°C (a)(f)

Linear Derating Factor

1.5

mW/°C

Power Dissipation at TA=25°C (b)(f)

Linear Derating Factor

2.45

19.6

mW/°C

Power Dissipation at TA=25°C (c)(f)

Linear Derating Factor

mW/°C

Power Dissipation at TA=25°C (d)(f)

Linear Derating Factor

1.13

mW/°C

Power Dissipation at TA=25°C (d)(g)

Linear Derating Factor

1.7

13.6

mW/°C

Power Dissipation at TA=25°C (e)(g)

Linear Derating Factor

mW/°C

Operating and Storage Temperature Range

T :T

-55 to +150

°C

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

83.3

UNIT

°C/W

Junction to Ambient (a)(f)

Junction to Ambient (b)(f)

Junction to Ambient (c)(f)

Junction to Ambient (d)(f)

Junction to Ambient (d)(g)

θJA

125

111

73.5

41.7

Junction to Ambient (e)(g)

Notes

(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For a dual device with one active die.

(g) For dual device with 2 active die running at equal power.

(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.

(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm

wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

ISSUE 1 - JUNE 2002

ZXTD2M832

TYPICAL CHARACTERISTICS

3.5

3.0

2.5

2.0

1.5

CE(SAT)

T_amb=25°C

2oz Cu

Note (e)(g)

Limited

2oz Cu

Note (a)(f)

100ms

10ms

1oz Cu

Note (d)(g)

0.1

1.0

1ms

Note (a)(f)

100us

1oz Cu

0.5

0.0

0.01

Single Pulse, T_amb=25°C

Note (d)(f)

0.1

100 125 150

V Collector-Emitter Voltage (V)

Temperature (°C)

Safe Operating Area

Derating Curve

225

200

175

150

125

100

Note (a)(f)

1oz copper

Note (f)

1oz copper

Note (g)

D=0.5

2oz copper

Note (f)

Single Pulse

D=0.05

D=0.1

D=0.2

2oz copper

Note (g)

100µ 1m 10m 100m

10 100 1k

0.1

100

Pulse Width (s)

BoardCuArea(sqcm)

Transient Thermal Impedance

Thermal Resistance v Board Area

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2oz copper

Note (g)

T_amb=25°C

_jmax=150°C

Continuous

2oz copper

Note (f)

1oz copper

Note (g)

1oz copper

Note (f)

0.1

100

BoardCuArea(sqcm)

Power Dissipation v Board Area

ISSUE 1 - JUNE 2002

ZXTD2M832

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

-25

-35

=-100␮A

(BR)CBO

Collector-Emitter Breakdown

Voltage

-20

-25

8.5

=-10mA*

(BR)CEO

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

-7.5

I =-100␮A

(BR)EBO

CBO

-25

-30

=-20V

=-6V

Emitter Cut-Off Current

EBO

Collector Emitter Cut-Off Current

=-16V

CES

Collector-Emitter Saturation

Voltage

-19

=-0.1A, I =-10mA*

CE(sat)

-170

-190

-240

-225

-220 mV

-250 mV

-350 mV

-300 mV

=-1A, I =-20mA*

=-1.5A, I =-50mA*

=-2.5A, I =-150mA*

=-3.5A, I =-350mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

-1.10 -1.075

=-3.5A, I =350mA*

BE(sat)

BE(on)

-0.87

475

450

230

-0.95

=-3.5A, V =-2V*

Static Forward Current Transfer

Ratio

300

150

=-10mA, V =-2V*

=-0.1A, V =-2V*

=-2A, V =-2V*

=-6A, V =-2V*

Transition Frequency

150

180

MHz

=-50mA, V =-10V

f=100MHz

Output Capacitance

Turn-On Time

=10V, f=1MHz

obo

(on)

(off)

=-10V, I =1A

=I =20mA

Turn-Off Time

670

B1 B2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 1 - JUNE 2002

ZXTD2M832

TYPICAL CHARACTERISTICS

100m

10m

0.25

I_C/I_B=50

0.20

Tamb=25°C

100°C

0.15

0.10

0.05

0.00

I_C/I_B=100

25°C

I_C/I_B=50

I_C/I_B=10

-55°C

100m

I_C^10mCollector Current ¹(A)

V_CE(SAT)vI_C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

630

540

450

360

270

180

V =2V

I_C/I_B=50

1.0

100°C

0.8

0.6

0.4

25°C

-55°C

25°C

-55°C

100°C

100m

10m

100m

I_C^10mCollector Current ¹(A)

I_CCollector Current (A)

h vI_C

V_BE(SAT)vI_C

V =2V

1.0

0.8

0.6

0.4

0.2

-55°C

25°C

100°C

I_C^10mCollector Current ¹(A)

100m

V_BE(ON)vI_C

ISSUE 1 - JUNE 2002

ZXTD2M832

MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)

CONTROLLING DIMENSIONS IN MILLIMETRES

APPROX. CONVERTED DIMENSIONS IN INCHES

MLP832 PACKAGE DIMENSIONS

MILLIMETRES

INCHES

MILLIMETRES

MIN. MAX.

0.65 REF

2.00 BSC

INCHES

MIN. MAX.

DIM

MIN.

0.80

0.00

0.65

0.15

0.24

0.17

MAX.

1.00

0.05

0.75

0.25

0.34

0.30

MIN.

MAX.

0.039

0.031

0.00

0.0256 BSC

0.0787 BSC

0.002

0.0255

0.006

0.009

0.0066

0.0295

0.0098

0.013

0.43

0.63

0.36

0.017

0.0249

0.014

0.16

0.20

0.006

0.0078

0.00

0.45

0.0157

0.005

0.0118

0.125

3.00 BSC

0.118 BSC

0.075 BSC

0.0029 BSC

0.82

1.01

1.02

1.21

0.032

0.040

⍜

0Њ

12Њ

0Њ

12Њ

0.0397

0.0476

Europe

Americas

Asia Pacific

Zetex (Asia) Ltd

Zetex plc

Zetex GmbH

Zetex Inc

Fields New Road

Chadderton

Oldham, OL9 8NP

United Kingdom

Telephone (44) 161 622 4422

Fax: (44) 161 622 4420

uksales@zetex.com

Streitfeldstraße 19

D-81673 München

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Hauppauge, NY11788

3701-04 Metroplaza, Tower 1

Hing Fong Road

Kwai Fong

Germany

USA

Hong Kong

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Telephone: (631) 360 2222

Fax: (631) 360 8222

usa.sales@zetex.com

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

These offices are supported by agents and distributors in major countries world-wide.

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced

for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company

reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product information, log on to www.zetex.com

ISSUE 1 - JUNE 2002

ZXTD2M832TA [ZETEX]

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