ZXTP2014ZQTA [DIODES]
Power Bipolar Transistor,;![ZXTP2014ZQTA](http://pdffile.icpdf.com/pdf2/p00290/img/icpdf/ZXTP2014ZQTA_1760209_icpdf.jpg)
型号: | ZXTP2014ZQTA |
厂家: | ![]() |
描述: | Power Bipolar Transistor, |
文件: | 总7页 (文件大小:502K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXTP2014ZQ
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
Description
Mechanical Data
This bipolar junction transistor (BJT) is designed to meet the stringent
requirement of automotive applications.
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin Plated Leads. Solderable per MIL-
STD-202, Method 208
Features
BVCEO > -140V
IC = -3A Continuous Collector Current
Weight: 0.05 grams (Approximate)
ICM = -10A Peak Pulse Current
Very Low Saturation Voltage
Applications
RSAT = 85mΩ @ IC -3A for Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The ZXTP2014ZQ is suitable for automotive applications
requiring specific change control and is AEC-Q101 qualified,
is PPAP capable, and is manufactured in IATF16949:2016
certified facilities.
Motor Driving
Line Switching
High Side Switches
Subscriber Line Interface Cards (SLIC)
SOT89
E
C
B
C
Device Schematic
Top View
Pin-Out Top View
Ordering Information (Note 4)
Part Number
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
ZXTP2014ZQTA
Automotive
955
7
12
1000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT89
955 = Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 9 = 2019)
WW = Week Code (01 to 53)
955
YWW
1 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-180
-140
-7
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
-3
A
-10
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.5
12
2.1
16.8
Unit
(Note 5)
(Note 6)
Power Dissipation
Linear Derating Factor
W
mW/°C
PD
(Note 5)
(Note 6)
83
60
RϴJA
RϴJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
-55 to +150
°C
TJ, TSTG
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge — Human Body Model
ESD HBM
ESD MM
4000
V
3A
Electrostatic Discharge — Machine Model
400
V
C
Notes:
5. For a device mounted with the collector lead on 25mm × 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 50mm × 50mm 1oz copper.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
Thermal Characteristics and Derating Information
VCE(sat)
10
2.0
1.5
1.0
0.5
0.0
Limit
50mm x 50mm 1oz Cu
1
DC
1s
100ms
10ms
100m
25mm x 25mm 1oz Cu
Single Pulse. TA=25oC
25mm x 25mm 1oz Cu
1ms
10
100s
10m
0
20 40 60 80 100 120 140 160
100m
1
100
Temperature (oC)
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
Derating Curve
80
60
40
20
0
25mm x 25mm 1oz Cu
D=0.5
Single Pulse. TA=25oC
25mm x 25mm 1oz Cu
100
10
1
D=0.2
Single Pulse
D=0.05
D=0.1
100
µ
1m 10m 100m
1
10
100
1k
100μ
µ
1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Pulse Power Dissipation
Transient Thermal Impedance
3 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min
-180
-180
-140
-7.0
Typ
-200
-200
-160
-8.0
Max
—
Unit
V
Test Condition
IC = -100µA
—
V
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
—
V
—
V
IE = -100µA
< -1
—
-20
-0.5
nA
µA
VCB = -150V
VCB = -150V, TA = +100°C
VCB = -150V
VCB = -150V, TA = +100°C
VEB = -6V
Collector Cutoff Current
—
ICBO
< -1
—
< -1
-20
-0.5
nA
µA
ICER
R ≤ 1kΩ
Collector Cutoff Current
Emitter Cutoff Current
—
—
-10
nA
IEBO
IC = -0.1A, IB = -5mA
IC = -0.5A, IB = -50mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -3A, IB = -300mA
IC = -3A, VCE = -5V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
-37
-50
-80
-60
-75
-115
-330
Collector-Emitter Saturation Voltage (Note 8)
—
mV
VCE(sat)
-255
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
—
—
-910
-800
-1010
-900
mV
mV
VBE(sat)
VBE(on)
100
100
45
225
200
100
5
—
300
—
DC Current Gain (Note 8)
—
hFE
—
—
VCE = -10V, IC = -100mA,
f = 50MHz
Transition Frequency
Output Capacitance
—
120
—
MHz
pF
fT
COBO
tON
—
—
33
42
—
—
VCB = -10V, f = 1MHz
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
Switching Time
ns
—
636
—
tOFF
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
4 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
100m
10m
2.0
1.5
1.0
0.5
TA=25oC
IC/IB=10
IC/IB=50
IC/IB=20
100oC
25oC
-55oC
IC/IB=10
1
0.0
1m
10m
100m
100m
1
- IC Collector Current (A)
- IC Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
250
225
200
175
150
125
100
75
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCE=-5V
IC/IB=10
1.2
1.0
0.8
0.6
0.4
100oC
25oC
-55oC
25oC
-55oC
100oC
50
25
0
1m
10m
100m
1
10
1m
10m
100m
1
- IC Collector Current (A)
- IC Collector Current (A)
hFE v IC
VBE(sat) v IC
1.4
1.2
1.0
0.8
0.6
0.4
VCE=-5V
-55oC
25oC
100oC
1m
10m
100m
1
- IC Collector Current (A)
VBE(on) v IC
5 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
D1
c
SOT89
Dim Min Max
Typ
1.50
0.56
0.48
0.38
4.50
A
B
1.40 1.60
0.50 0.62
H
E
B1 0.42 0.54
c
D
0.35 0.43
4.40 4.60
B1
L
D1 1.62 1.83 1.733
B
D2 1.61 1.81
2.40 2.60
E2 2.05 2.35
1.71
2.50
2.20
1.50
4.10
2.78
1.05
E
e
D2
e
-
-
H
3.95 4.25
8
H1 2.63 2.93
0.90 1.20
°
(
4X)
L
H1
L1 0.327 0.527 0.427
0.20 0.40 0.30
All Dimensions in mm
E2
z
A
L1
D
z
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
X2
Value
Dimensions
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Y3
Y1
Y4
X
G
Y
Y2
C
X1
6 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
ZXTP2014ZQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
www.diodes.com
7 of 7
www.diodes.com
July 2019
© Diodes Incorporated
ZXTP2014ZQ
Document number: DS42037 Rev. 1 - 2
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00103/img/page/ZXTP2025F_553662_files/ZXTP2025F_553662_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00103/img/page/ZXTP2025F_553662_files/ZXTP2025F_553662_2.jpg)
ZXTP2025FTC
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23, 3 PIN
ZETEX
![](http://pdffile.icpdf.com/pdf1/p00162/img/page/ZXTP2_901594_files/ZXTP2_901594_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00162/img/page/ZXTP2_901594_files/ZXTP2_901594_2.jpg)
ZXTP2025FTC
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23, 3 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明