ZXTP2014ZQTA [DIODES]

Power Bipolar Transistor,;
ZXTP2014ZQTA
型号: ZXTP2014ZQTA
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Power Bipolar Transistor,

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中文:  中文翻译
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ZXTP2014ZQ  
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR  
Description  
Mechanical Data  
This bipolar junction transistor (BJT) is designed to meet the stringent  
requirement of automotive applications.  
Case: SOT89  
Case Material: Molded Plastic. “Green” Molding Compound. UL  
Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-  
STD-202, Method 208  
Features  
BVCEO > -140V  
IC = -3A Continuous Collector Current  
Weight: 0.05 grams (Approximate)  
ICM = -10A Peak Pulse Current  
Very Low Saturation Voltage  
Applications  
RSAT = 85m@ IC -3A for Low Equivalent On-Resistance  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
The ZXTP2014ZQ is suitable for automotive applications  
requiring specific change control and is AEC-Q101 qualified,  
is PPAP capable, and is manufactured in IATF16949:2016  
certified facilities.  
Motor Driving  
Line Switching  
High Side Switches  
Subscriber Line Interface Cards (SLIC)  
SOT89  
E
C
B
C
Device Schematic  
Top View  
Pin-Out Top View  
Ordering Information (Note 4)  
Part Number  
Compliance  
Marking  
Reel Size (inches)  
Tape Width (mm)  
Quantity per Reel  
ZXTP2014ZQTA  
Automotive  
955  
7
12  
1000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and  
Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
SOT89  
955 = Product Type Marking Code  
YWW = Date Code Marking  
Y = Last Digit of Year (ex: 9 = 2019)  
WW = Week Code (01 to 53)  
955  
YWW  
1 of 7  
www.diodes.com  
July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-180  
-140  
-7  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
-3  
A
-10  
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
1.5  
12  
2.1  
16.8  
Unit  
(Note 5)  
(Note 6)  
Power Dissipation  
Linear Derating Factor  
W
mW/°C  
PD  
(Note 5)  
(Note 6)  
83  
60  
RϴJA  
RϴJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
°C/W  
-55 to +150  
°C  
TJ, TSTG  
ESD Ratings (Note 7)  
Characteristic  
Symbol  
Value  
Unit  
JEDEC Class  
Electrostatic Discharge Human Body Model  
ESD HBM  
ESD MM  
4000  
V
3A  
Electrostatic Discharge Machine Model  
400  
V
C
Notes:  
5. For a device mounted with the collector lead on 25mm × 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air  
conditions whilst operating in steady-state.  
6. Same as Note 5, except the device is mounted on 50mm × 50mm 1oz copper.  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
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July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
Thermal Characteristics and Derating Information  
VCE(sat)  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
Limit  
50mm x 50mm 1oz Cu  
1
DC  
1s  
100ms  
10ms  
100m  
25mm x 25mm 1oz Cu  
Single Pulse. TA=25oC  
25mm x 25mm 1oz Cu  
1ms  
10  
100s  
10m  
0
20 40 60 80 100 120 140 160  
100m  
1
100  
Temperature (oC)  
-VCE Collector-Emitter Voltage (V)  
Safe Operating Area  
Derating Curve  
80  
60  
40  
20  
0
25mm x 25mm 1oz Cu  
D=0.5  
Single Pulse. TA=25oC  
25mm x 25mm 1oz Cu  
100  
10  
1
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
100
µ
1m 10m 100m  
1
10  
100  
1k  
100μ  
µ
1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Pulse Power Dissipation  
Transient Thermal Impedance  
3 of 7  
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July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 8)  
Emitter-Base Breakdown Voltage  
Symbol  
BVCBO  
BVCER  
BVCEO  
BVEBO  
Min  
-180  
-180  
-140  
-7.0  
Typ  
-200  
-200  
-160  
-8.0  
Max  
Unit  
V
Test Condition  
IC = -100µA  
V
IC = -1µA, RB 1kΩ  
IC = -10mA  
V
V
IE = -100µA  
< -1  
  
-20  
-0.5  
nA  
µA  
VCB = -150V  
VCB = -150V, TA = +100°C  
VCB = -150V  
VCB = -150V, TA = +100°C  
VEB = -6V  
Collector Cutoff Current  
  
ICBO  
< -1  
  
< -1  
-20  
-0.5  
nA  
µA  
ICER  
R 1kΩ  
Collector Cutoff Current  
Emitter Cutoff Current  
  
-10  
nA  
IEBO  
IC = -0.1A, IB = -5mA  
IC = -0.5A, IB = -50mA  
IC = -1A, IB = -100mA  
IC = -3A, IB = -300mA  
IC = -3A, IB = -300mA  
IC = -3A, VCE = -5V  
IC = -10mA, VCE = -5V  
IC = -1A, VCE = -5V  
IC = -3A, VCE = -5V  
IC = -10A, VCE = -5V  
-37  
-50  
-80  
-60  
-75  
-115  
-330  
Collector-Emitter Saturation Voltage (Note 8)  
  
mV  
VCE(sat)  
-255  
Base-Emitter Saturation Voltage (Note 8)  
Base-Emitter Turn-On Voltage (Note 8)  
  
  
-910  
-800  
-1010  
-900  
mV  
mV  
VBE(sat)  
VBE(on)  
100  
100  
45  
225  
200  
100  
5
300  
DC Current Gain (Note 8)  
hFE  
VCE = -10V, IC = -100mA,  
f = 50MHz  
Transition Frequency  
Output Capacitance  
120  
MHz  
pF  
fT  
COBO  
tON  
33  
42  
VCB = -10V, f = 1MHz  
VCC = -50V, IC = -1A,  
IB1 = -IB2 = -100mA  
Switching Time  
ns  
636  
tOFF  
Note:  
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.  
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July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
100m  
10m  
2.0  
1.5  
1.0  
0.5  
TA=25oC  
IC/IB=10  
IC/IB=50  
IC/IB=20  
100oC  
25oC  
-55oC  
IC/IB=10  
1
0.0  
1m  
10m  
100m  
100m  
1
- IC Collector Current (A)  
- IC Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
250  
225  
200  
175  
150  
125  
100  
75  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCE=-5V  
IC/IB=10  
1.2  
1.0  
0.8  
0.6  
0.4  
100oC  
25oC  
-55oC  
25oC  
-55oC  
100oC  
50  
25  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
- IC Collector Current (A)  
- IC Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VCE=-5V  
-55oC  
25oC  
100oC  
1m  
10m  
100m  
1
- IC Collector Current (A)  
VBE(on) v IC  
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July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
Package Outline Dimensions  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SOT89  
D1  
c
SOT89  
Dim Min Max  
Typ  
1.50  
0.56  
0.48  
0.38  
4.50  
A
B
1.401.60  
0.50 0.62  
H
E
B1 0.42 0.54  
c
D
0.35 0.43  
4.40 4.60  
B1  
L
D1 1.62 1.83 1.733  
B
D2 1.61 1.81  
2.40 2.60  
E2 2.05 2.35  
1.71  
2.50  
2.20  
1.50  
4.10  
2.78  
1.05  
E
e
D2  
e
-
-
H
3.95 4.25  
8
H1 2.63 2.93  
0.90 1.20  
°
(
4X)  
L
H1  
L1 0.327 0.527 0.427  
0.20 0.40 0.30  
All Dimensions in mm  
E2  
z
A
L1  
D
z
Suggested Pad Layout  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SOT89  
X2  
Value  
Dimensions  
(in mm)  
1.500  
0.244  
0.580  
0.760  
1.933  
1.730  
3.030  
1.500  
0.770  
4.530  
C
G
X
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
Y3  
Y1  
Y4  
X
G
Y
Y2  
C
X1  
6 of 7  
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July 2019  
© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  
ZXTP2014ZQ  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2019, Diodes Incorporated  
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© Diodes Incorporated  
ZXTP2014ZQ  
Document number: DS42037 Rev. 1 - 2  

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