DMD2N65-TR [DYELEC]
650V N-Channel Power MOSFET;
| 型号： | DMD2N65-TR |
| 厂家： | 
DIYI Electronic Technology Co., Ltd. |
| 描述： | 650V N-Channel Power MOSFET |
| 文件： | 总9页 (文件大小：2674K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N65
650V N-Channel Power MOSFET
RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A
Fast switching capability
●
PRODUCT SUMMARY
●
●
●
VDS (V)
RDS(on)(Ω)
Current
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability, high ruggedness
2A
650
4.4 @ VGS =10V
●
Case: TO-251,TO-252,TO-220,ITO-220
TO-262, TO-263 Package
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Package
Part No.
DMP2N65-TU
DMD2N65-TR
DMD2N65-TU
DMT2N65-TU
DMF2N65-TU
DMK2N65-TU
DMG2N65-TU
DMG2N65-TR
Packing
75pcs / Tube
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Block Diagram
2.5Kpcs / 13” Reel
75pcs / Tube
D
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
650
V
V
A
A
A
Gate-Source Voltage
±30
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
2.0
ID
2.0
IDM
8.0
115
Single Pulsed (Note 3)
mJ
Avalanche Energy
EAS
TO-220/TO-262/TO-263
ITO-220
44
W
W
W
23
Power Dissipation
PD
TO-251/TO-252
34
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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2N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
110
TO-251/ TO-252
TO-220/ITO-220
TO-262/TO-263
2.35
ITO-220
°C/W
Junction to Case
5.5
2.9
θJC
TO-251/ TO-252
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
V
VDS = 650V, VGS = 0V
10
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
100 nA
-100 nA
Forward
Reverse
VGS = 30V, VDS = 0V
IGSS
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID =1A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
4
4.4
Ω
CISS
COSS
CRSS
300
45
2
pF
pF
pF
-
-
-
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
-
-
ns
ns
10
25
20
Turn-On Rise Time
VDD =300V, ID =2A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
-
ns
Turn-Off Fall Time
-
ns
25
5.7
1.8
2
Total Gate Charge
QG
-
-
nC
nC
nC
VDS= 480V,ID= 2.4A,
Gate-Source Charge
QGS
QGD
V
GS= 10V (Note 1, 2)
-
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
A
IS
2.0
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Reverse Recovery Time
trr
357
2
ns
VGS = 0 V, IS = 2A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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May,2015-REV.00
2N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
SD controlled by pulse period
* D.U.T.-Device Under Test
*
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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2N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
150
300
450
600 750
0
0.6
Gate Threshold Voltage, VTH (V)
1.2
1.8 2.4 3.0 3.6
Drain-Source Breakdown Voltage, BVDSS (V)
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2N65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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2N65
650V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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2N65
650V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
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2N65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify DIYI for any damages resulting from such improper use or sale.
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