EC737509AA9R [E-CMOS]
N-Channel MOSFET;
| 型号： | EC737509AA9R |
| 厂家： | 
E-CMOS Corporation |
| 描述： | N-Channel MOSFET |
| 文件： | 总7页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC737509A
N-Channel MOSFET
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 175℃ operating temperature
Main Product Characteristics
75V
6.5mΩ(typ.)
80A
V
DSS
R
DS(on)
I
D
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max.
Units
80
70
I
I
I
D
D
@ TC = 25°C
@ TC = 100°C
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
320
DM
Power Dissipation③
187
W
W/°C
V
P
D
@TC = 25°C
Linear Derating Factor
2.0
Drain-Source Voltage
75
V
V
E
DS
GS
AS
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
375
mJ
A
50
I
AS
-55 to + 175
°C
TJ
TSTG
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
Thermal Resistance
Symbol
Characterizes
Junction-to-case③
Typ.
—
Max.
Units
℃/W
℃/W
℃/W
0.8
62
40
RθJC
Junction-to-ambient (t ≤ 10s) ④
—
RθJA
Junction-to-Ambient (PCB mounted, steady-state) ④
—
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Symbol Parameter
Min.
75
—
—
2
Typ.
—
Max.
—
8
Units
Conditions
Drain-to-Source breakdown voltage
V
V
(BR)DSS
V
V
GS = 0V, ID = 250ꢀA
GS=10V,I = 30A
= 125℃
6.5
D
Static Drain-to-Source on-resistance
mꢁ
V
RDS(on)
TJ
12.5
—
13
4
V
DS = VGS, I = 250ꢀA
D
Gate threshold voltage
V
GS(th)
TJ
= 125℃
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
2.35
—
—
1
V
DS = 75V,VGS = 0V
Drain-to-Source leakage current
Gate-to-Source forward leakage
ꢀA
nA
I
I
DSS
—
50
100
—
—
—
—
—
—
—
—
—
—
—
T
V
V
J
= 125℃
GS =20V
GS = -20V
—
GSS
—
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Q
Q
Q
g
93.6
20.2
33.3
17.3
15.2
52
I
D
= 30A,
DS=30V,
GS = 10V
nC
ns
V
V
gs
gd
t
t
t
t
d(on)
V
GS=10V, VDS=30V,
r
RL
=15ꢁ,
Turn-Off delay time
Fall time
d(off)
f
RGEN=2.5ꢁ
19
Input capacitance
Output capacitance
Reverse transfer capacitance
C
C
C
iss
4373
352
306
V
V
GS = 0V
pF
DS = 25V
oss
rss
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
—
—
80
A
I
I
S
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
—
—
320
A
SM
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.85
36
1.3
—
V
I
S
=30A, VGS=0V
= 25°C, I =75A, di/dt =
100A/ꢀs
ns
nC
t
rr
T
J
F
—
Q
rr
62
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
Test circuits and Waveforms
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
Ordering and Marking Information
EC737509A X X
R：Tape & Reel
TO263＝A9
Part Number
Package
TO263-3
Marking
Marking Information
1. LLLLLL: Last six numbers of Lot No.
2. YY：Year code；(Ex. 2014=”14”).
3. WW：Week code；(Ex. 25th weeks=>”25”).
737509A
LLLLLL
YYWW
EC737509AA9R
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 7
5E06N-Rev.F001
EC737509A
N-Channel MOSFET
TO263 Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 7 of 7
5E06N-Rev.F001
相关型号：
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