MSYSTEM
MSYSTEM
MCP3464R-E/ST
Two/Four/Eight-Channel, 153.6 ksps, Low-Noise, 16-Bit Delta-Sigma ADCs with Internal Voltage Reference
MICROCHIP
MSYSTEM
MSYSTEM
MSYSTEM
CDCDB400RHBT
适用于 PCIe® 第 1 代到第 5 代的 4 路输出时钟缓冲器 | RHB | 32 | -40 to 105
TI
MSYSTEM
TI
MSYSTEM
MSYSTEM
SOURIAU
MSYSTEM
SOURIAU
SOURIAU
D1331SH45T
D1331SH IGCT-Diode 盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 120mm，高度 26mm。
INFINEON
MSYSTEM
INA228AQDGSRQ1
INA228-Q1 AEC-Q100, 85-V, 20-Bit, Ultra-Precise Power/Energy/Charge Monitor With I2C Interface
TI
MSYSTEM
MSYSTEM
BTT3050EJ
The power transistor is built by an N-channel vertical power MOSFET. The BTT3050EJ is monolithically integrated. The BTT3050EJ is automotive qualified and is optimized for 24 V automotive applications.
INFINEON
MSYSTEM
PESD5V0R1BSF
Ultra low capacitance bidirectional ESD protection diodeProduction
NEXPERIA
MSYSTEM
MSYSTEM
TDK
MSYSTEM
SOURIAU
10AS-41
High-density Signal Conditioners 10-RACK
MSYSTEM
MSYSTEM
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
