APT8020B2FLL [MICROSEMI]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。型号: | APT8020B2FLL |
厂家: | Microsemi |
描述: | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
文件: | 总5页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT8020B2FLL
APT8020LFLL
800V 38A 0.220Ω
R
B2FLL
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
D
S
• Popular T-MAX™ or TO-264 Package
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8020B2_LFLL
UNIT
VDSS
ID
Drain-Source Voltage
800
38
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
152
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
694
PD
5.56
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
38
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3000
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 19A)
0.220
250
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
APT8020B2_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
5200
1000
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
190
195
27
3
V
= 10V
Total Gate Charge
GS
V
= 400V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 38A @ 25°C
D
Qgd
130
12
14
RESISTIVESWITCHING
td(on)
tr
V
= 15V
GS
V
= 400V
DD
td(off)
39
Turn-off Delay Time
Fall Time
I
= 38A @ 25°C
D
tf
R
= 0.6Ω
9
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
875
825
1450
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 38A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 533V V = 15V
GS
DD
Turn-off Switching Energy
I
= 38A, R = 5Ω
985
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
38
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
152
1.3
18
2
VSD
Volts
V/ns
(VGS = 0V, IS = -38A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
650
trr
ns
µC
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/µs)
1.4
5.9
Qrr
Peak Recovery Current
(IS = -38A, di/dt = 100A/µs)
10.8
18.9
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 4.16mH, R = 25Ω, Peak I = 38A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 38A
/
≤ 700A/µs
V
R ≤ 800 T ≤ 150°C
dt
S
D
J
6
Eon includes diode reverse recovery. See figures 18, 20.
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.20
0.9
0.16
0.7
0.12
0.5
Note:
0.08
t
1
0.3
t
2
0.04
SINGLEPULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.1
2
+ T
J
DM θJC
C
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT8020B2_LFLL
100
80
8V
7V
V
=15 &10 V
GS
60
TJ ( C)
TC ( C)
6.5V
0.0271
0.0656
0.0860
40
Dissipated Power
(Watts)
6V
0.00899
0.0202
0.293
20
0
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
5.5V
5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
120
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I
= 19A
GS
D
1.30
1.20
1.10
1.00
100
80
V
=10V
GS
60
T
= +125°C
= +25°C
J
40
V
=20V
GS
T
= -55°C
J
T
J
0.90
0.80
20
0
0
2
4
6
8
10
0
10
20
30
40
50 60 70
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
40
35
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 19A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
Typical Performance Curves
APT8020B2_LFLL
152
20,000
10,000
100
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
50
10
iss
100µS
1,000
C
C
oss
1mS
T
=+25°C
C
J
T =+150°C
rss
10mS
SINGLEPULSE
10
1
16
12
100
1
V
100
800
0
V
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
200
I
= 38A
D
100
T =+150°C
J
V
=160V
DS
T =+25°C
J
8
V
=400V
V
=640V
DS
DS
10
4
0
1
0
50
100
150
200
250
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
g
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
200
100
V
= 533V
DD
= 5Ω
180
R
T
G
t
d(off)
= 125°C
J
160
140
120
100
80
80
60
40
L = 100µH
V
= 533V
t
DD
= 5Ω
f
R
T
G
= 125°C
J
L = 100µH
t
r
60
40
20
0
t
d(on)
20
0
10
20
30
40
50
60
10
20
30
40
50
60
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
6000
5000
4000
3000
2000
V
= 533V
V
I
= 533V
DD
DD
= 38A
R
= 5Ω
G
D
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
E
off
EON includes
diode reverse recovery.
diode reverse recovery.
E
E
off
on
E
on
500
0
1000
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40 45 50
I
(A)
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT8020B2_LFLL
90%
GateVoltage
10%
GateVoltage
T 125°C
T 125°C
J
J
td(off)
td(on)
tr
DrainVoltage
90%
tf
DrainCurrent
DrainVoltage
90%
10%
0
5%
5%
DrainCurrent
10%
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT30DF100
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,7865,256,5834,748,103
5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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