BCP68T1/D [ETC]

NPN Epitaxial Transistor ; NPN晶体管外延\n
BCP68T1/D
型号: BCP68T1/D
厂家: ETC    ETC
描述:

NPN Epitaxial Transistor
NPN晶体管外延\n

晶体 晶体管
文件: 总8页 (文件大小:67K)
中文:  中文翻译
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ON Semiconductort  
BCP68T1  
NPN Silicon  
Epitaxial Transistor  
ON Semiconductor Preferred Device  
MEDIUM POWER  
NPN SILICON  
HIGH CURRENT  
TRANSISTOR  
This NPN Silicon Epitaxial Transistor is designed for use in low  
voltage, high current applications. The device is housed in the  
SOT-223 package, which is designed for medium power surface  
mount applications.  
SURFACE MOUNT  
High Current: I = 1.0 Amp  
C
The SOT-223 Package can be soldered using wave or reflow.  
SOT-223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die  
4
1
2
3
Available in 12 mm Tape and Reel  
CASE 318E-04, STYLE 1  
TO-261AA  
Use BCP68T1 to order the 7 inch/1000 unit reel.  
Use BCP68T3 to order the 13 inch/4000 unit reel.  
The PNP Complement is BCP69T1  
COLLECTOR 2,4  
BASE  
1
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage  
Symbol  
Value  
25  
20  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
I
C
1
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
A
Operating and Storage Temperature Range  
DEVICE MARKING  
T , T  
–65 to 150  
°C  
J
stg  
CA  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
R
83.3  
°C/W  
θ
JA  
L
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
T
260  
10  
°C  
Sec  
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BCP68T1/D  
BCP68T1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
25  
20  
5.0  
10  
10  
Vdc  
Vdc  
(BR)CES  
(BR)CEO  
(BR)EBO  
C
E
Collector-Emitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
V
C
B
Emitter-Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
Vdc  
E
C
Collector-Base Cutoff Current  
(V = 25 Vdc, I = 0)  
I
µAdc  
µAdc  
CBO  
CB  
E
Emitter-Base Cutoff Current  
(V = 5.0 Vdc, I = 0)  
I
EBO  
EB  
C
ON CHARACTERISTICS (2)  
DC Current Gain  
h
FE  
(I = 5.0 mAdc, V = 10 Vdc)  
50  
85  
60  
375  
C
CE  
(I = 500 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 1.0 Adc, V = 1.0 Vdc)  
C
CE  
Collector-Emitter Saturation Voltage  
(I = 1.0 Adc, I = 100 mAdc)  
V
0.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base-Emitter On Voltage  
(I = 1.0 Adc, V = 1.0 Vdc)  
V
BE(on)  
1.0  
C
CE  
DYNAMIC CHARACTERISTICS  
Current-Gain — Bandwidth Product  
f
T
60  
MHz  
(I = 10 mAdc, V = 5.0 Vdc)  
C
CE  
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
TYPICAL ELECTRICAL CHARACTERISTICS  
300  
200  
300  
200  
T = 125°C  
J
= 25°C  
100  
70  
100  
= -55°C  
V
= 10 V  
CE  
T = 25°C  
J
f = 30 MHz  
50  
30  
V
CE  
= 1.0 V  
10  
1.0  
10  
100  
1000  
10  
100  
200  
1000  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
Figure 2. Current-Gain-Bandwidth Product  
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2
BCP68T1  
TYPICAL ELECTRICAL CHARACTERISTICS  
1.0  
0.8  
0.6  
0.4  
0.2  
0
80  
T = 25°C  
J
T = 25°C  
J
V
@ I /I = 10  
C B  
BE(sat)  
70  
60  
50  
40  
30  
V
BE(on)  
@ V = 1.0 V  
CE  
V
@ I /I = 10  
C B  
CE(sat)  
5.0  
1.0  
10  
100  
1000  
0
1.0  
2.0  
3.0  
4.0  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. “On” Voltage  
Figure 4. Capacitance  
25  
20  
15  
10  
5.0  
-ā0.8  
-1.2  
-1.6  
-ā2.0  
-ā2.4  
-ā2.8  
T = 25°C  
J
R
θ
for V  
BE  
VB  
0
5.0  
10  
15  
20  
1.0  
10  
100  
1000  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Capacitance  
Figure 6. Base-Emitter Temperature Coefficient  
1.0  
0.8  
0.6  
T = 25°C  
J
= 1000 mA  
I
= 10 mA  
= 100 mA  
= 50 mA  
0.4  
0.2  
0
C
= 500 mA  
0.01  
0.1  
1.0  
I , BASE CURRENT (mA)  
10  
100  
B
Figure 7. Saturation Region  
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3
BCP68T1  
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the total  
design. The footprint for the semiconductor packages must  
be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.15  
3.8  
0.079  
2.0  
0.248  
6.3  
0.091  
2.3  
0.091  
2.3  
0.079  
2.0  
inches  
mm  
0.059  
1.5  
0.059  
1.5  
0.059  
1.5  
SOT-223  
SOT-223 POWER DISSIPATION  
The power dissipation of the SOT-223 is a function of the  
collector pad, the power dissipation can be increased.  
Although the power dissipation can almost be doubled with  
this method, area is taken up on the printed circuit board  
which can defeat the purpose of using surface mount  
collector pad size. This can vary from the minimum pad size  
for soldering to a pad size given for maximum power  
dissipation. Power dissipation for a surface mount device is  
determined by T  
temperature of the die, R , the thermal resistance from the  
device junction to ambient, and the operating temperature,  
, the maximum rated junction  
technology. A graph of R  
shown in Figure 8.  
160  
versus collector pad area is  
J(max)  
θJA  
θJA  
T . Using the values provided on the data sheet for the  
A
Board Material = 0.0625″  
GĆ10/FRĆ4, 2 oz Copper  
T = 25°C  
A
SOT-223 package, P can be calculated as follows:  
D
140  
120  
T
J(max) – TA  
Rθ  
0.8 Watts  
PD  
=
JA  
°
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values into  
1.5 Watts  
1.25 Watts*  
the equation for an ambient temperature T of 25°C, one can  
calculate the power dissipation of the device which in this  
case is 1.5 watts.  
A
100  
80  
*Mounted on the DPAK footprint  
150°C – 25°C  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
PD  
=
= 1.5 watts  
A, Area (square inches)  
83.3°C/W  
Figure 8. Thermal Resistance versus Collector  
Pad Area for the SOT-223 Package (Typical)  
The 83.3°C/W for the SOT-223 package assumes the use  
of the recommended footprint on a glass epoxy printed  
circuit board to achieve a power dissipation of 1.5 watts.  
There are other alternatives to achieving higher power  
dissipation from the SOT-223 package. One is to increase  
the area of the collector pad. By increasing the area of the  
Another alternative would be to use a ceramic substrate or  
an aluminum core board such as Thermal Clad . Using a  
board material such as Thermal Clad, an aluminum core board,  
the power dissipation can be doubled using the same footprint.  
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4
BCP68T1  
SOLDER STENCIL GUIDELINES  
Prior to placing surface mount components onto a printed  
or stainless steel with a typical thickness of 0.008 inches.  
The stencil opening size for the SOT-223 package should be  
the same as the pad size on the printed circuit board, i.e., a  
1:1 registration.  
circuit board, solder paste must be applied to the pads. A  
solder stencil is required to screen the optimum amount of  
solder paste onto the footprint. The stencil is made of brass  
SOLDERING PRECAUTIONS  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within  
a short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
The soldering temperature and time should not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the maximum  
temperature gradient should be 5°C or less.  
After soldering has been completed, the device should be  
allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and result  
in latent failure due to mechanical stress.  
Always preheat the device.  
The delta temperature between the preheat and soldering  
should be 100°C or less.*  
Mechanical stress or shock should not be applied during  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering method,  
the difference should be a maximum of 10°C.  
cooling  
* Soldering a device without preheating can cause  
excessive thermal shock and stress which can result in  
damage to the device.  
TYPICAL SOLDER HEATING PROFILE  
For any given circuit board, there will be a group of  
control settings that will give the desired heat pattern. The  
operator must set temperatures for several heating zones,  
and a figure for belt speed. Taken together, these control  
settings make up a heating “profile” for that particular  
circuit board. On machines controlled by a computer, the  
computer remembers these profiles from one operating  
session to the next. Figure 9 shows a typical heating profile  
for use when soldering a surface mount device to a printed  
circuit board. This profile will vary among soldering  
systems but it is a good starting point. Factors that can affect  
the profile include the type of soldering system in use,  
density and types of components on the board, type of solder  
used, and the type of board or substrate material being used.  
This profile shows temperature versus time. The line on the  
graph shows the actual temperature that might be  
experienced on the surface of a test board at or near a central  
solder joint. The two profiles are based on a high density and  
a
low density board. The Vitronics SMD310  
convection/infrared reflow soldering system was used to  
generate this profile. The type of solder used was 62/36/2  
Tin Lead Silver with a melting point between 177–189°C.  
When this type of furnace is used for solder reflow work, the  
circuit boards and solder joints tend to heat first. The  
components on the board are then heated by conduction. The  
circuit board, because it has a large surface area, absorbs the  
thermal energy more efficiently, then distributes this energy  
to the components. Because of this effect, the main body of  
a component may be up to 30 degrees cooler than the  
adjacent solder joints.  
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5
BCP68T1  
PACKAGE DIMENSIONS  
SOT–223 (TO–261)  
CASE 318E–04  
ISSUE K  
A
F
NOTES:  
ąă1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
ąă2. CONTROLLING DIMENSION: INCH.  
4
2
INCHES  
DIM MIN MAX  
MILLIMETERS  
S
B
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
0.100  
0.35  
2.00  
1.05  
10  
1
3
A
B
C
D
F
0.249  
0.130  
0.060  
0.024  
0.115  
0.087  
0.263  
0.145  
0.068  
0.035  
0.126  
0.094  
D
G
H
J
L
0.0008 0.0040 0.020  
G
0.009  
0.060  
0.033  
0
0.014  
0.078  
0.041  
10  
0.24  
1.50  
0.85  
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)  
0.264  
0.287  
6.70  
7.30  
M
H
K
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
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6
BCP68T1  
Notes  
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7
BCP68T1  
Thermal Clad is a trademark of the Bergquist Company  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
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Toll Free from Hong Kong & Singapore:  
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001–800–4422–3781  
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German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
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EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
BCP68T1/D  

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