BCW32LT1/D [ETC]
General Purpose Transistors ; 通用晶体管\n
| 型号： | BCW32LT1/D |
| 厂家： | 
ETC |
| 描述： | General Purpose Transistors
|
| 文件： | 总8页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
32
Unit
Vdc
1
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
V
CEO
V
CBO
V
EBO
BASE
32
Vdc
5.0
Vdc
2
EMITTER
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
3
Total Device Dissipation
P
mW
D
(1)
FR-5 Board
= 25°C
225
T
1
A
Derate above 25°C
1.8
mW/°C
°C/W
2
Thermal Resistance,
Junction to Ambient
R
556
θJA
SOT–23 (TO–236AB)
CASE 318
Total Device Dissipation
P
D
300
mW
STYLE 6
(2)
Alumina Substrate,
T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
R
417
θJA
DEVICE MARKING
Junction and Storage Temperature
T , T
J stg
–55 to
+150
°C
D2x
(1) FR–5 = 1.0
(2) Alumina = 0.4
0.75 0.062 in.
0.3 0.024 in. 99.5% alumina.
x = Monthly Date Code
ORDERING INFORMATION
Device
BCW32LT1
Package
Shipping
3000 Units / Reel
SOT–23
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
January, 2000 – Rev. 0
BCW32LT1/D
BCW32LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
V
32
32
—
—
—
—
—
—
Vdc
Vdc
Vdc
(BR)CEO
(I = 2.0 mAdc, V
C EB
= 0)
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
5.0
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= 32 Vdc, I = 0)
—
—
—
—
100
10
nAdc
Adc
E
= 32 Vdc, I = 0, T = 100°C)
E
A
ON CHARACTERISTICS
DC Current Gain
(I = 2.0 mAdc, V
C CE
h
—
FE
= 5.0 Vdc)
200
—
—
—
—
450
0.25
0.70
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 2.0 mAdc, V = 5.0 Vdc)
V
BE(on)
0.55
C
CE
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C
—
—
—
—
4.0
10
pF
dB
obo
(I = 0, V
E
= 10 Vdc, f = 1.0 MHz)
CB
Noise Figure
NF
(I = 0.2 mAdc, V
C
= 5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz,
S
CE
BW = 200 Hz)
TYPICAL NOISE CHARACTERISTICS
(V
= 5.0 Vdc, T = 25°C)
CE
A
20
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
50
20
I
C
= 1.0 mA
R ≈ ∞
S
R = 0
S
300 µA
300 µA
10
100 µA
10
5.0
7.0
5.0
100 µA
2.0
1.0
10 µA
30 µA
0.5
0.2
0.1
30 µA
3.0
2.0
10 µA
10 20
50 100 200
500 1 k
2 k
5 k 10 k
10
20
50 100 200
500 1 k
2 k
5 k 10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
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2
BCW32LT1
NOISE FIGURE CONTOURS
(V
= 5.0 Vdc, T = 25°C)
CE
A
500 k
1 M
500 k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
200 k
100 k
50 k
20 k
20 k
10 k
10 k
5 k
2.0 dB
1.0 dB
5 k
2 k
1 k
3.0 dB
4.0 dB
2.0 dB
2 k
1 k
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300 500 700 1 k
10
20 30
50 70 100
200 300 500 700 1 k
I , COLLECTOR CURRENT (µA)
C
I , COLLECTOR CURRENT (µA)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
Noise Figure is defined as:
20 k
2
R
n S
2
1 2
2
e
n
4KTR
4KTR
I
S
10 k
5 k
NF
20 log
10
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
2 k
1 k
2.0 dB
I
= Noise Current of the Transistor referred to the input.
(Figure 4)
3.0 dB
n
K
T
R
500
–23
= Boltzman’s Constant (1.38 x 10
j/°K)
5.0 dB
8.0 dB
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
200
100
50
S
20 30
50 70 100
200 300 500 700 1 k
10
I , COLLECTOR CURRENT (µA)
C
Figure 5. Wideband
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3
BCW32LT1
TYPICAL STATIC CHARACTERISTICS
400
200
T = 125°C
J
25°C
–55°C
100
80
60
V
V
CE
= 1.0 V
= 10 V
CE
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
1.0
100
T = 25°C
PULSE WIDTH = 300 µs
DUTY CYCLE ≤ 2.0%
A
T = 25°C
J
I = 500 µA
B
0.8
0.6
0.4
0.2
0
80
60
400 µA
300 µA
I
C
= 1.0 mA 10 mA
50 mA
100 mA
200 µA
100 µA
40
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
0
5.0
10
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I ≤ h /2
C B FE
T = 25°C
J
25°C to 125°C
–55°C to 25°C
1.0
0.8
0.6
0.4
*
for V
CE(sat)
VC
V
@ I /I = 10
BE(sat) C B
–0.8
–1.6
–2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
–55°C to 25°C
0.2
0
for V
BE
VB
0.1 0.2
V
@ I /I = 10
CE(sat) C B
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50 100
0.5
1.0 2.0
5.0 10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
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BCW32LT1
TYPICAL DYNAMIC CHARACTERISTICS
10
7.0
5.0
T = 25°C
f = 1.0 MHz
J
C
ib
C
ob
3.0
2.0
1.0
0.05 0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
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BCW32LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
T
R
, the maximum rated junction temperature of the die,
, the thermal resistance from the device junction to
J(max)
θJA
ambient, and the operating temperature, T . Using the values
provided on the data sheet for the SOT–23 package, P can
A
D
be calculated as follows:
• Always preheat the device.
T
– T
A
• The delta temperature between the preheat and
soldering should be 100°C or less.*
J(max)
P
=
D
R
θJA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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BCW32LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
S
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
H
J
D
V
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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BCW32LT1
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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For additional information, please contact your local
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BCW32LT1/D
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