BLF6G22LS-75,118

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品牌:ETC
描述:RF FET LDMOS 65V 18.7DB SOT502B

BLF6G22LS-75,118 概述

RF FET LDMOS 65V 18.7DB SOT502B

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BLF6G22LS-75  
Power LDMOS transistor  
Rev. 3 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
75 W LDMOS power transistor for base station applications at frequencies from  
2000 MHz to 2200 MHz.  
Table 1.  
Typical performance  
RF performance at Tcase = 25 C in a common source class-AB production test circuit.  
Mode of operation  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
D  
IMD3  
(dBc)  
ACPR  
(dBc)  
(MHz)  
(dB)  
18.7  
(%)  
2-carrier W-CDMA  
2110 to 2170  
17  
30.5 37.5[1] 41.5[1]  
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;  
carrier spacing 10 MHz.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,  
a supply voltage of 28 V and an IDq of 690 mA:  
Average output power = 17 W  
Gain = 18.7 dB  
Efficiency = 30.5 %  
IMD3 = 37.5 dBc  
ACPR = 41.5 dBc  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (2000 MHz to 2200 MHz)  
Internally matched for ease of use  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
BLF6G22LS-75  
Power LDMOS transistor  
1.3 Applications  
RF power amplifiers for W-CDMA base stations and multicarrier applications in the  
2000 MHz to 2200 MHz frequency range  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
drain  
Simplified outline  
Graphic symbol  
1
1
3
2
2
gate  
[1]  
3
source  
2
3
sym112  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF6G22LS-75  
-
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
0.5 +13  
V
-
18  
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
+150 C  
225 C  
-
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Tcase = 80 C; PL = 17 W  
Typ Unit  
Rth(j-case) thermal resistance from junction to case  
0.75 K/W  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
2 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V(BR)DSS drain-source breakdown  
voltage  
VGS = 0 V; ID = 0.5 mA  
65  
-
-
V
VGS(th)  
VGSq  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.4  
gate-source quiescent voltage VDS = 28 V; ID = 690 mA 1.75  
2
2.4  
2.75  
3
V
2.16  
-
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
-
A  
A
IDSX  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
14.9  
18.7  
-
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 5 A  
-
-
-
-
300  
-
nA  
S
forward transconductance  
7.3  
0.14  
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 3.5 A  
0.24  
Crs  
feedback capacitance  
VGS = 0 V; VDS = 28 V;  
f = 1 MHz  
-
1.5  
-
pF  
7. Application information  
Table 7.  
Application information  
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test  
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;  
RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 C; unless otherwise specified; in a  
class-AB production test circuit.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
dB  
Gp  
power gain  
PL(AV) = 17 W  
PL(AV) = 17 W  
PL(AV) = 17 W  
17.6  
18.7  
9.5  
30.5  
-
IRL  
input return loss  
drain efficiency  
-
6.5  
dB  
D  
28  
-
-
%
IMD3  
ACPR  
third order intermodulation distortion PL(AV) = 17 W  
adjacent channel power ratio PL(AV) = 17 W  
37.5 34  
dBc  
-
41.5 38.5 dBc  
7.1 Ruggedness in class-AB operation  
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz.  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
3 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
001aah586  
20  
70  
G
(dB)  
η
p
D
(%)  
G
p
19  
55  
18  
17  
16  
40  
25  
10  
η
D
0
20  
40  
60  
80  
100  
(W)  
P
L
VDS = 28 V; IDq = 690 mA; f = 2140 MHz.  
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical  
values  
001aah567  
001aah568  
20  
60  
15  
IMD  
IMD3  
G
η
D
(%)  
p
(dB)  
G
p
(dBc)  
19  
45  
30  
IMD5  
IMD7  
η
D
18  
17  
16  
30  
15  
0
45  
60  
75  
0
20  
40  
60  
80  
100  
120  
L(PEP)  
140  
(W)  
0
20  
40  
60  
80  
100  
120  
L(PEP)  
140  
(W)  
P
P
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1  
MHz.  
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1  
MHz.  
Fig 2. Two-tone CW power gain and drain efficiency  
as functions of peak envelope load power;  
typical values  
Fig 3. Two-tone CW intermodulation distortion as a  
function of peak envelope load power;  
typical values  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
4 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
001aah569  
001aah570  
20  
60  
25  
IMD3  
IMD3,  
ACPR  
(dBc)  
G
(dB)  
η
D
(%)  
p
19  
40  
35  
45  
55  
ACPR  
G
p
η
D
18  
17  
20  
0
0
10  
20  
30  
P
40  
(W)  
0
10  
20  
30  
40  
(W)  
P
L(AV)  
L(AV)  
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;  
f2 = 2145 MHz; carrier spacing 10 MHz.  
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;  
f2 = 2145 MHz; carrier spacing 10 MHz.  
Fig 4. 2-carrier W-CDMA power gain and drain  
efficiency as functions of average load power;  
typical values  
Fig 5. 2-carrier W-CDMA adjacent power channel  
ratio and third order intermodulation distortion  
as functions of average load power; typical  
values  
8. Test information  
R1  
V
V
GG  
DD  
C22  
C5  
C6  
C7  
C23  
C10 C11 C12 C13  
C14  
R2  
C8  
C9  
C4  
C1  
C21  
C2  
C3  
C20  
INPUT  
OUTPUT  
C15 C16 C17 C18 C19  
001aah571  
The drawing is not to scale.  
Fig 6. Test circuit for operation at 800 MHz  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
5 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
C22  
C23  
R1  
C5  
C10  
C6  
C7  
C8  
C9  
R2  
C11 C13  
C12  
C14  
C4  
C1  
C20  
C21  
C3  
C2  
C17  
C19  
C16 C18  
C15  
001aah572  
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm.  
The drawing is not to scale.  
See Table 8 for list of components.  
Fig 7. Component layout  
Table 8.  
List of components (see Figure 6 and Figure 7)  
Description  
Component  
C1  
Value  
Remarks  
[1]  
[1]  
[1]  
multilayer ceramic chip capacitor 5.6 pF  
multilayer ceramic chip capacitor 0.5 pF  
multilayer ceramic chip capacitor 0.6 pF  
C2, C3  
C4  
C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 F  
TDK 1206 or capacitor of same quality  
Murata 0603 or capacitor of same quality  
C7, C8, C11, C16  
multilayer ceramic chip capacitor 100 nF  
multilayer ceramic chip capacitor 15 pF  
multilayer ceramic chip capacitor 220 nF  
multilayer ceramic chip capacitor 10 pF  
multilayer ceramic chip capacitor 0.7 pF  
multilayer ceramic chip capacitor 20 pF  
[1]  
C9  
C10, C15  
C12, C17  
C20  
AVX 0805 or capacitor of same quality  
[1]  
[1]  
[1]  
C21  
C22  
tantalum capacitor  
electrolytic capacitor  
SMD resistor  
10 F; 35 V  
C23  
220 F; 35 V  
3.3   
R1  
R2  
SMD resistor  
5.1   
[1] American Technical Ceramics type 100B or capacitor of same quality.  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
6 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
9. Package outline  
Earless flanged ceramic package; 2 leads  
SOT502B  
D
A
F
3
1
D
D
1
c
U
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
2
w
2
UNIT  
1
1
1
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
ISSUE DATE  
PROJECTION  
OUTLINE  
VERSION  
IEC  
JEDEC  
JEITA  
07-05-09  
12-05-02  
SOT502B  
Fig 8. Package outline SOT502B  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
7 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
10. Abbreviations  
Table 9.  
Abbreviations  
Description  
Third Generation Partnership Project  
Acronym  
3GPP  
CCDF  
CW  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
LDMOS  
LDMOST  
PAR  
Dedicated Physical CHannel  
Laterally Diffused Metal-Oxide Semiconductor  
Laterally Diffused Metal-Oxide Semiconductor Transistor  
Peak-to-Average power Ratio  
PDPCH  
RF  
transmission Power of the Dedicated Physical CHannel  
Radio Frequency  
VSWR  
W-CDMA  
Voltage Standing-Wave Ratio  
Wideband Code Division Multiple Access  
11. Revision history  
Table 10. Revision history  
Document ID  
BLF6G22LS-75#3  
Modifications:  
Release date  
20150901  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
BLF6G22LS-75_2  
The format of this document has been redesigned to comply with the new identity guidelines  
of Ampleon.  
Legal texts have been adapted to the new company name where appropriate.  
BLF6G22LS-75_2  
BLF6G22LS-75_1  
20100414  
Product data sheet  
-
BLF6G22LS-75_1  
20080208  
Preliminary data sheet  
-
-
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
8 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’ aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
9 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own Any  
reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’ warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’ specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’ standard warranty and Ampleon’ product  
specifications.  
13. Contact information  
For more information, please visit:  
http://www.ampleon.com  
For sales office addresses, please visit:  
http://www.ampleon.com/sales  
BLF6G22LS-75#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
10 of 11  
BLF6G22LS-75  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
6
7
7.1  
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 10  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon The Netherlands B.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 1 September 2015  
Document identifier: BLF6G22LS-75#3  

BLF6G22LS-75,118 相关器件

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BLF6G22S-45 NXP Power LDMOS transistor 获取价格
BLF6G22S-45,112 NXP BLF6G22S-45 获取价格
BLF6G24-12 NXP TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power 获取价格
BLF6G27(LS)-100 NXP RF Manual 16th edition 获取价格
BLF6G27(LS)-135 NXP RF Manual 16th edition 获取价格
BLF6G27(LS)-75 NXP RF Manual 16th edition 获取价格
BLF6G27(S)-45 NXP RF Manual 16th edition 获取价格
BLF6G27-10 NXP WiMAX power LDMOS transistor 获取价格
BLF6G27-10(G) NXP RF Manual 16th edition 获取价格

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