BLF6G24-12 [NXP]

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power;
BLF6G24-12
型号: BLF6G24-12
厂家: NXP    NXP
描述:

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power

放大器 CD 晶体管
文件: 总8页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BLF6G24-12  
Power LDMOS transistor  
Rev. 1 — 24 February 2011  
Objective data sheet  
1. Product profile  
1.1 General description  
12 W LDMOS power transistor for various applications such as ISM and industrial heating  
at frequencies from 2400 MHz to 2500 MHz.  
Table 1.  
Typical performance  
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.  
Mode of operation  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
ηD  
(MHz)  
2450  
(dB)  
19  
(%)  
63  
CW  
12  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
„ Typical CW performance at a frequency of 2450 MHz, a supply voltage of 28 V and an  
Dq of 10 mA:  
I
‹ Average output power = 12 W  
‹ Power gain = 19 dB (typ)  
‹ Efficiency = 63 % (typ)  
„ Easy power control  
„ Integrated ESD protection  
„ Excellent ruggedness  
„ High efficiency  
„ Excellent thermal stability  
„ Designed for broadband operation (2400 MHz to 2500 MHz)  
„ Internally matched for ease of use  
„ Qualified for a supply voltage of up to 32 V  
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
„ RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency  
range such as ISM and industrial heating.  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
drain  
Simplified outline  
Graphic symbol  
1
2
gate  
1
[1]  
3
source  
2
3
sym112  
2
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF6G24-12  
-
earless flanged ceramic package; 2 leads  
SOT975B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
-
65  
VGS  
Tstg  
0.5 +13  
V
65  
+150 °C  
Tj  
-
225  
°C  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Tcase = 80 °C; PL = 12 W  
Typ Unit  
Rth(j-case) thermal resistance from junction to case  
4.0 K/W  
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
2 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 °C per section; unless otherwise specified.  
Symbol Parameter  
Conditions  
VGS = 0 V; ID = 0.5 mA  
Min  
Typ  
Max  
Unit  
V(BR)DSS drain-source breakdown  
voltage  
65  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.4  
1.9  
2.4  
1.4  
-
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
VGS = VGS(th) + 3.75 V;  
-
-
-
μA  
A
IDSX  
2.7  
VDS = 10 V  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 0.9 A  
-
-
140  
-
nA  
S
forward transconductance  
-
0.8  
-
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 0.6 A  
328  
1256 mΩ  
7. Application information  
Table 7.  
Application information  
Mode of operation: CW at 2450 MHz; RF performance at VDS = 28 V; IDq = 10 mA; Tcase = 25 °C;  
unless otherwise specified; in a class-AB production test circuit.  
Symbol Parameter  
Conditions  
PL = 12 W  
PL = 12 W  
PL = 12 W  
Min  
18  
-
Typ Max  
19  
13 10  
63  
Unit  
dB  
dB  
%
Gp  
power gain  
-
RLin  
ηD  
input return loss  
drain efficiency  
58  
-
7.1 Ruggedness in class-AB operation  
The BLF6G24-12 is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 10 mA; PL = 12 W (CW); f = 2450 MHz.  
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
3 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
8. Package outline  
Earless flanged ceramic package; 2 leads  
SOT975B  
D
A
F
U
1
D
1
A
c
1
E
1
U
2
H
E
2
M
M
b
w
1
A
Q
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
UNIT  
mm  
A
b
c
D
D
E
E
F
H
Q
U
U
w
1
1
1
1
2
3.63 3.38 0.23 6.55 6.93 6.55 6.93 0.23 11.05 0.76 6.43 6.43  
3.05 3.23 0.18 6.78 6.40 6.78 0.18 0.66 6.27  
6.27  
0.51  
0.02  
6.40  
10.80  
0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.030 0.253 0.253  
0.120 0.127 0.007  
inches  
0.267 0.252 0.267 0.007  
0.026 0.247  
0.425 0.247  
0.252  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
06-11-03  
07-09-28  
SOT975B  
Fig 1. Package outline SOT975B  
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
4 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
9. Abbreviations  
Table 8.  
Abbreviations  
Description  
Acronym  
CW  
Continuous Wave  
ISM  
Industrial, Scientific and Medical  
Laterally Diffused Metal-Oxide Semiconductor  
Radio Frequency  
LDMOS  
RF  
VSWR  
Voltage Standing-Wave Ratio  
10. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BLF6G24-12 v.1  
20110224  
Objective data sheet  
-
-
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
5 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
11.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
11.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
6 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF6G24-12  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Objective data sheet  
Rev. 1 — 24 February 2011  
7 of 8  
BLF6G24-12  
NXP Semiconductors  
Power LDMOS transistor  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5  
3
4
5
6
7
7.1  
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . . 7  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 24 February 2011  
Document identifier: BLF6G24-12  

相关型号:

BLF6G27(LS)-100

RF Manual 16th edition
NXP

BLF6G27(LS)-135

RF Manual 16th edition
NXP

BLF6G27(LS)-75

RF Manual 16th edition
NXP

BLF6G27(S)-45

RF Manual 16th edition
NXP

BLF6G27-10

WiMAX power LDMOS transistor
NXP

BLF6G27-10(G)

RF Manual 16th edition
NXP

BLF6G27-10,112

BLF6G27-10
NXP

BLF6G27-10,118

BLF6G27-10
NXP

BLF6G27-100

RF Manual 16th edition
NXP

BLF6G27-100,112

WiMAX power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack
NXP

BLF6G27-100,118

暂无描述
NXP

BLF6G27-10G

WiMAX power LDMOS transistor
NXP