BLS2731-110,114 [ETC]
TRANSISTOR RF POWER SOT423A;
| 型号： | BLS2731-110,114 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR RF POWER SOT423A |
| 文件： | 总12页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLS2731-110
Microwave power transistor
Rev. 6 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
In data sheets, where the previous Philips references is mentioned, please use
the new links as shown below.
http://www.philips.semiconductors.com use http://www.ampleon.com
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sales.addresses@www.semiconductors.philips.com use
http://www.ampleon.com/sales
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © Ampleon B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest
sales office (details via http://www.ampleon.com/sales).
Thank you for your cooperation and understanding,
Ampleon
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
FEATURES
PINNING - SOT423A
PIN
• Suitable for short and medium pulse applications
DESCRIPTION
• Internal input and output matching networks for an easy
circuit design
1
2
3
collector
emitter
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
dbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
3
applications in the 2.7 to 3.1 GHz band.
3
2
MBK052
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
f
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Pulsed class-C
2.7 to 3.1
40
>110
>7
>35
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2001 Dec 05
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
75
UNIT
VCBO
VCES
VEBO
ICM
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
RBE = 0
75
V
open collector
2
V
peak collector current
total power dissipation
storage temperature
tp ≤ 100 µs; δ ≤ 10%
tp = 100 µs; δ = 10%; Tmb = 25 °C
12
A
Ptot
500
+200
200
235
W
°C
°C
°C
Tstg
Tj
−65
−
operating junction temperature
soldering temperature
Tsld
up to 0.2 mm from ceramic cap;
−
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Zth j-h
thermal impedance from junction to
heatsink
tp = 100 µs; δ = 10%; note 1
0.24
K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector leakage current
collector leakage current
emitter leakage current
CONDITIONS
IC = 30 mA; open emitter
IC = 30 mA; VBE = 0
VCB = 40 V; IE = 0
MIN.
MAX.
UNIT
V(BR)CBO
V(BR)CES
ICBO
75
75
−
−
V
−
V
3
mA
mA
mA
ICES
VCE = 40 V; VBE = 0
VEB = 1.5 V; IC = 0
−
6
IEBO
−
0.6
100
hFE
DC current gain
VCE = 5 V; IC = 3 A
40
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common base test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
PL
(W)
GP
(dB)
ηC
(%)
2.7 to 3.1
40
40
40
≥110
≥7
≥35
Class-C; tp = 100 µs; δ = 10%
2.7 to 2.9
2.9 to 3.1
typ. 130
typ. 120
typ. 8
typ. 7.5
typ. 42
typ. 40
2001 Dec 05
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
MBK284
MBK285
10
50
140
P
handbook, halfpage
handbook, halfpage
2.7
3.1
L
η
G
C
p
(W)
120
2.9 GHz
η
(%)
40
C
(dB)
8
G
p
100
80
60
40
20
6
4
30
20
2
0
10
0
0
10
2.7
2.8
2.9
3
3.1
12
14
16
18
20
P
(W)
f (GHz)
D
VCE = 40 V; class-C; tp = 100 µs; δ = 10%.
VCE = 40 V; class-C; tp = 100 µs; δ = 10%.
Fig.2 Power gain and efficiency as functions of
frequency; typical values.
Fig.3 Load power as a function of drive power;
typical values.
MGM538
MGM539
8
12
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
x
Z
i
i
R
L
(Ω)
4
0
8
r
i
4
0
−4
X
L
−8
2.6
2.8
3
3.2
2.6
2.8
3
3.2
f (GHz)
f (GHz)
VCB = 40 V; class-C; PL = 110 W.
VCB = 40 V; class-C; PL = 110 W.
Fig.4 Input impedance as function of frequency
(series components); typical values.
Fig.5 Load impedance as function of frequency
(series components); typical values.
2001 Dec 05
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
30
30
40
L8
L11
L2
RC
C2
L7
L1
L4
L5
L10
L9
C1
L6
L3
input
output
L13
L14
L12
MGM540
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
2001 Dec 05
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1
C2
RC
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
12 pF
18 pF
multilayer ceramic chip capacitor in series 100 nF + 5 Ω
with SMD resistor
L1
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 4.5 mm
width 10 mm
L2
length 2.5 mm
width 16.4 mm
L3
length 8.3 mm
width 1 mm
L4
length 8 mm
width 1.5 mm
L5
length 2 mm
width 8.9 mm
L6
length 12.7 mm
width 1.2 mm
L7
length 4.5 mm
width 10 mm
L8
length 2.5 mm
width 24.4 mm
L9
length 4.4 mm
width 1 mm
L10
L11
L12
L13
L14
length 5.2 mm
width 1 mm
length 9.3 mm
width 1 mm
length 2.5 mm
width 6 mm
length 7.8 mm
width 1.2 mm
length 7.5 mm
width 1.2 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm.
2001 Dec 05
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT423A
D
A
F
3
D
1
U
B
1
q
C
c
1
p
H
U
E
E
2
1
w
M
M
M
B
A
1
A
2
Q
w
b
M
M
C
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
9.53
9.27
0.10
0.05
5.72
4.90
12.09 12.83 8.84 10.29
11.71 12.57 8.56 10.03
1.58
1.47
19.81
18.29
3.43
3.18
3.35
2.95
22.99 9.91
22.73 9.65
mm
16.51
0.65
0.25
0.01
0.76
0.03
0.375 0.004
0.365 0.002
0.225
0.193
0.476 0.505 0.348 0.405 0.062
0.461 0.495 0.337 0.395 0.058
0.78
0.72
0.135 0.132
0.125 0.116
0.905 0.390
0.895 0.380
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-03-29
SOT423A
2001 Dec 05
7
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Dec 05
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
2001 Dec 05
9
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
2001 Dec 05
10
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
2001 Dec 05
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/05/pp12
Date of release: 2001 Dec 05
Document order number: 9397 750 09083
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