BLV99/SL [ETC]
RF Power Transistors for UHF ; RF功率晶体管为UHF\n
| 型号： | BLV99/SL |
| 厂家： | 
ETC |
| 描述： | RF Power Transistors for UHF
|
| 文件： | 总6页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
Line-ups
RF Power Transistors for UHF
1996 Feb 12
File under Discrete Semiconductors, SC08b
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
INTRODUCTION
In this section, we present information on recommended circuit line-ups in the main RF power application areas.
A comprehensive range of output power levels is indicated, together with our recommended types in the particular line-up
configuration. The necessary drive power level for each line-up is indicated in the first column.
More detailed application information can be found in the application reports book “Bipolar and MOS Transmitting
Transistors”.
AM AIRCRAFT TRANSMITTERS (100 to 400 MHz)
Bipolar
INPUT
POWER
(mW)
PL(carr)
(W)
VCE
(V)
S = stud
F = flange
1st STAGE
BLW89
2nd STAGE
2 × BLW90
3rd STAGE
40
60
2 × BLX94C
2 × BLU60/28
2 × BLU60/28
40
60
28
28
28
S
BLW89
BLW90
2 × BLW91
S/F
S/F
500
2 × BLX94C
120
PowerMOS
INPUT
POWER
(mW)
PL(carr)
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
30
25
BLF521(1)
BLF521(1)
BLF521(1)
BLF521(1)
BLF522(1)
BLF543
BLF543
BLF544
BLF545
BLF546
BLF547
BLF548
40
80
28
28
28
28
30
100
150
100
Note
1. VDS = 12.5 V.
PORTABLE and MOBILE TRANSMITTERS (400 to 512 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
BLV90
2nd STAGE
BLU99
3rd STAGE
45
15
3
7.5
13
BFR96S
BLU99
BLU99
BLU99
BLU99
BLW81
10
20
45
60
400
280
400
BLU20/12
BLU20/12
BLU20/12
BLU45/12
BLU60/12
13
13
1996 Feb 12
2
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
PowerMOS
INPUT
PL
(W)
VCE
(V)
POWER
(mW)
1
st STAGE
2nd STAGE
BLF522
3rd STAGE
50
BLF521
5
12.5
BASE STATIONS (400 to 470 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
40
BLW89
BLW90
BLW91
BLX94C
BLX94C
BLU60/28
30
60
28
28
220
PowerMOS
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
35
40
BLF521(1)
BLF521(1)
BLF521(1)
BLF521(1)
BLF522(1)
BLF543
BLF544
BLF544
BLF545
BLF546
BLF548
BLF547
40
80
28
28
28
28
150
45
150
100
Note
1. VDS = 12.5 V.
ANALOG CELLULAR (900 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
BFG10W/X
2nd STAGE
3rd STAGE
10
1
BLT71/8
BLT80
1.2
1.2
1.2
1.2
4.8
6
BFG540/X
BFG540/X
BFG520W/X
BLT81
BLT71
BLT61
1
BLT70
4.8
3.6
1
BFG10W/X
1996 Feb 12
3
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
DIGITAL CELLULAR (900 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1
st STAGE
2nd STAGE
BFG10W/X
3rd STAGE
BLT72
1
1
1
BFG540W/X
BFG540W/X
BFG540W/X
3(1)
3
3.5(1)
4.8
3.6
6
BFG10W/X
BFG10W/X
BLT62
BLT82
Note
1. Pulsed.
PORTABLE TRANSMITTERS (860 to 960 MHz))
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
1
BFG540
BFG91A
BLT80
BLT80
BLT81
1.2
3
6
15
BLT92/SL
7.5
MOBILE TRANSMITTERS (860 to 960 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
S = stud
F = flange
1st STAGE
BLU86
2nd STAGE
3rd STAGE
BLV93
4th STAGE
110
100
100
BLV91/SL
BLV92
8
13
13
13
S/F
S/F
S/F
BLV90
BLU86
BLV94
BLV93
15
22
BLV91/SL
BLV95
1996 Feb 12
4
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
BASE STATIONS (860 to 960 MHz) CLASS AB OPERATION
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
f
1st STAGE
2nd STAGE
3rd STAGE
4th STAGE
(MHz)
270
220
65
BLV103(1)
BLV103(1)
BLV99/SL(2)
BLV99/SL
BLV99/SL
BGY916
BLV103(1)
BLV103(1)
BLV99/SL
BLV99/SL
BLV99/SL
BLV99/SL
BLV103(1)
BLV934
BLV935
BLV910
BLV100(3)
BLV100(3)
BLV958
BLV920
BLV920
BLV103
BLV103
BLV103
BLV103
BLV934
30
30
26
26
26
25
25
26
26
26
25
25
25
25
26
960
960
960
900
960
960
960
960
900
960
900
900(4)
960
BLV946
40
64
BLV101A
BLV101B
45
100
25
45
75
75
BLV958
75
75
2 × BLV946
BLV98CE
BLV97CE
BLV945A
BLV945A
BLV950
80
25
2 × BLV101A
2 × BLV101B
BLV950
85
30
85
35
120
150 (PEP)
150
20
BLV950
250
Notes
1. BLV904 is a comparable transistor in a SMD package.
2. BLV902 is a comparable transistor in a SMD package.
3. BLV909 is a comparable transistor in a SMD package.
4. dIM = −30 dB.
1996 Feb 12
5
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
DIGITAL CELLULAR (1800 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1
st STAGE
2nd STAGE
3rd STAGE
2
1
BFG540W/X
BFG540W/X
BFG10W/X
BFG10W/X
BLT14
BLT13
1.6
2
4.8
6
BASE STATIONS (1800 to 1900 MHz)
Bipolar
PL
(W)
VCE
(V)
1st STAGE
LLE18010X
2nd STAGE
LLE18040X
3rd STAGE
LLE18150X
4th STAGE
15
50
50
75
90
24
24
26
24
24
LLE18010X
BGY1916
LLE18040X
LFE20500X
LLE18040X
LLE18040X
LLE18150X
2 × LLE18300X
LLE18010X
LLE18010X
LLE18150X
LLE18300X
2 × LXE18400X
2 × LFE20500X
BASE STATIONS (1900 to 2000 MHz)
Bipolar
PL
(W)
VCE
(V)
1st STAGE
LLE18010X
2nd STAGE
LLE18040X
3rd STAGE
4th STAGE
LLE18150X
LLE18150X
15
50
50
75
90
24
24
26
24
24
LLE18010X
BGY1816
LLE18040X
LFE18500X
LLE18040X
LLE18040X
2 × LLE18300X
LLE18010X
LLE18010X
LLE18150X
LLE18300X
2 × LXE18400X
2 × LFE18500X
BASE STATIONS (1800 to 2000 MHz) CLASS AB OPERATION
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
25
60
BGY1816; BGY1916
BLV2040(1)
BLV2040(1)
15
15
25
50
26
26
26
26
BLV2042(1)
BLV2044
BLV2045
2 × BLV2045
120
250
BLV2044
BLV2044
BLV2042(1)
Note
1. In a SOT409 SMD package.
1996 Feb 12
6
相关型号：
©2020 ICPDF网 联系我们和版权申明