DBFS450R17KE321 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | DBFS450R17KE321 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总7页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
450
605
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
900
2250
+/-20
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 450 A, V•Š = 15 V, TÝÎ = 25°C
I† = 450 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
2,00 2,45
2,40
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 18,0 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,2
5,8
5,10
1,7
6,4
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
40,5
1,30
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,28
0,30
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
0,08
0,10
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,81
1,00
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
0,18
0,30
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 450 A, V†Š = 900 V, L» = 80 nH
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
EÓÒ
EÓËË
96,5
140
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 450 A, V†Š = 900 V, L» = 80 nH
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
96,0
140
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
1800
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
0,055 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
0,047
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1700
450
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
900
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
20000
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 450 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 450 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
1,80 2,20
1,90
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 450 A, - diŒ/dt = 4450 A/µs
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C
525
570
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 450 A, -diŒ/dt = 4450 A/µs
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C
115
195
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 450 A, -diŒ/dt = 4450 A/µs
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
60,5
110
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
0,10 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,085
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min.
insulation test voltage
Vš»¥¡
3,4
Cu
kV
Material Modulgrundplatte
material of module baseplate
Material für innere Isolation
material for internal insulation
Alè0é
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
14,0
14,0
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
10,0
10,0
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min. typ. max.
0,005
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
LÙ†Š
K/W
nH
Modulinduktivität
stray inductance module
20
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T† = 25°C, pro Schalter / per switch
R††óôŠŠó
1,10
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
M
150
°C
°C
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
125
125
Lagertemperatur
storage temperature
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M5
Schraube / screw M6
3,00
3,0
-
-
6,00 Nm
6,0 Nm
g
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
M
Gewicht
weight
G
916
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
3
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
900
900
TÝÎ = 25°C
TÝÎ = 125°C
V•Š = 20V
V•Š = 15V
V•Š = 12V
750
750
V•Š = 10V
V•Š = 9V
V•Š = 8V
600
450
300
150
0
600
450
300
150
0
0,0
0,5
1,0
1,5
2,0
V†Š [V]
2,5
3,0
3,5
4,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 3,3 Â, R•ÓËË = 3,3 Â, V†Š = 900 V,
TÝÎ = 125°C
900
450
TÝÎ = 25°C
TÝÎ = 125°C
EÓÒ
EÓËË
400
750
350
600
450
300
150
0
300
250
200
150
100
50
0
5
6
7
8
9
V•Š [V]
10
11
12
13
0
150
300
450
I† [A]
600
750
900
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
4
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 450 A, V†Š = 900 V, TÝÎ = 125°C
800
0,1
EÓÒ
EÓËË
ZÚÌœ† : IGBT
700
600
500
400
300
200
100
0
0,01
i:
1
2
3
rÍ[K/W]: 0,0055 0,0165 0,022 0,011
4
τÍ[s]:
0,01
0,04
0,06 0,3
0,001
0,001
0
5
10
15
R• [Â]
20
25
30
0,01
0,1
1
t [s]
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
1050
900
750
600
450
300
900
TÝÎ = 25°C
TÝÎ = 125°C
750
600
450
300
150
0
150
0
I†, Modul
I†, Chip
0
200 400 600 800 1000 1200 1400 1600 1800
V†Š [V]
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
5
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 3,3 Â, V†Š = 900 V, TÝÎ = 125°C
IŒ = 450 A, V†Š = 900 V, TÝÎ = 125°C
180
130
120
110
100
90
EØþÊ
EØþÊ
160
140
120
100
80
80
70
60
60
50
40
40
20
30
0
20
0
150
300
450
IΠ[A]
600
750
900
0
5
10
15
R• [Â]
20
25
30
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ† = f (t)
1
ZÚÌœ† : Diode
0,1
0,01
i:
1
2
3
rÍ[K/W]: 0,01 0,03 0,04 0,02
4
τÍ[s]:
0,01 0,04 0,06 0,3
0,001
0,001
0,01
0,1
1
t [s]
prepared by: Martin Wölz
approved by: Christoph Lübke
date of publication: 2003-8-1
revision: 2.1
6
Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
ϑ
Gehäuseabmessungen / package outlines
prepared by: Martin Wölz
date of publication: 2003-8-1
revision: 2.1
approved by: Christoph Lübke
7
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