DTA114EM3/D [ETC]
Digital Transistor ; 数字晶体管\n
| 型号： | DTA114EM3/D |
| 厂家： | 
ETC |
| 描述： | Digital Transistor
|
| 文件： | 总12页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA114EM3T5G Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
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PNP SILICON
DIGITAL
TRANSISTORS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT−723 Package can be Soldered using Wave or Reflow.
• Available in 4 mm, 8000 Unit Tape & Reel
• These are Pb−Free Devices
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
MARKING
DIAGRAM
V
CBO
CEO
V
50
Vdc
3
I
C
100
mAdc
XX M
SOT−723
CASE 631AA
Style 1
2
1
xx = Specific Device Code
(See Marking Table on page 2)
M
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
February, 2004 − Rev. 0
DTA114EM3/D
DTA114EM3T5G Series
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
†
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTA114EM3T5G
DTA124EM3T5G*
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G*
DTA123EM3T5G*
DTA143EM3T5G*
DTA143ZM3T5G*
DTA124XM3T5G
DTA123JM3T5G*
DTA115EM3T5G
DTA144WM3T5G*
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
∞
∞
SOT−723
(Pb−Free)
2.2
4.7
47
47
47
100
22
8000/Tape & Reel
*Available upon request
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
P
D
FR−4 Board (Note 1.) @ T = 25°C
Derate above 25°C
260
2.0
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
R
480
°C/W
q
JA
P
D
FR−4 Board (Note 2.) @ T = 25°C
Derate above 25°C
600
4.8
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
R
205
°C/W
°C
q
JA
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
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2
DTA114EM3T5G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector−Emitter Breakdown Voltage (Note 3.)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3.)
DC Current Gain
DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
250
250
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
27
140
130
140
150
140
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
E
(I = 10 mA, I = 5 mA) DTA123EM3T5G
C
B
(I = 10 mA, I = 1 mA) DTA114TM3T5G/DTA143TM3T5G/
C
B
DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
DTA114EM3T5G
DTA124EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA144EM3T5G
DTA115EM3T5G
DTA144WM3T5G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
DTA114TM3T5G
CC
B
L
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
DTA114EM3T5G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Input Resistor
DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
15.4
1.54
70
32.9
Resistor Ratio
/
DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
DTA115EM3T5G
DTA114YM3T5G
DTA114TM3T5G/DTA143TM3T5G
DTA123EM3T5G/DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
0.8
1.0
0.1
0.47
0.047
2.1
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
DTA144WM3T5G
300
250
200
150
100
R
= 480°C/W
q
JA
50
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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4
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
−25°C
ꢀ0.1
100
25°C
75°C
ꢀ0.01
10
ꢀ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢀ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
0
ꢀ0.1
ꢀ0.01
V
O
= 5 V
ꢀ0.001
0
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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5
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EM3T5G
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢁ=ꢁ−25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
O
= 5 V
ꢀ9
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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6
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G
1
1000
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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7
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
O
= 5 V
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
+12 V
V
O
= 0.2 V
25°C
T ꢁ=ꢁ−25°C
A
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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8
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
E
= 0 V
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 27. Input Voltage versus Output Current
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9
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WM3T5G
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
E
= 0 V
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 32. Input Voltage versus Output Current
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10
DTA114EM3T5G Series
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
E
D
A
b1
−Y−
3
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
HE
L
1
2
DIM MIN
NOM
0.50
0.20
0.3
0.12
MAX
0.55
0.27 0.0059 0.0079 0.0106
0.35 0.010 0.012 0.014
0.17 0.0028 0.0047 0.0067
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
SOT−723
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
DTA114EM3T5G Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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DTA114EM3/D
相关型号：
DTA114EM3T5G
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
ONSEMI
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