EMX4T2R [ETC]
TRANSISTOR | BJT | PAIR | NPN | 18V V(BR)CEO | 50MA I(C) | SOT-363VAR ; 晶体管| BJT | PAIR | NPN | 18V V（ BR ） CEO | 50MA I（C ） | SOT- 363VAR\n
| 型号： | EMX4T2R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PAIR | NPN | 18V V(BR)CEO | 50MA I(C) | SOT-363VAR
|
| 文件： | 总1页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMX4 / UMX4N / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
!External dimensions (Units : mm)
!Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
EMX4
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
!Equivalent circuits
EMX4 / UMX4N
IMX4
ROHM : EMT6
UMX4N
Each lead has same dimensions
(3) (2)
(1)
(4) (5)
(6)
(4)
(5)
(6)
(3)
(2)
(1)
1.25
2.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
0.1Min.
VCBO
VCEO
VEBO
30
18
V
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
3
V
I
C
50
mA
EMX4 / UMX4N
IMX4
150(TOTAL)
300(TOTAL)
150
∗1
∗2
Collector power
dissipation
Pc
mW
IMX4
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55~+150
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
1.6
2.8
!Package, marking, and packaging specifications
0.3Min.
Type
EMX4
EMT6
X4
UMX4N
UMT6
X4
IMX4
SMT6
X4
Package
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Marking
Code
T2R
TR
T108
3000
Basic ordering unit (pieces)
8000
3000
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
Typ.
Max.
−
−
Conditions
Unit
BVCBO
BVCEO
BVEBO
30
18
3
−
−
V
V
I
I
I
C
=10µA
=1mA
C
−
−
−
−
V
E
=10µA
CB=10V
EB=2V
I
CBO
EBO
FE
CE(sat)
FE1 / FE2
−
−
0.5
0.5
270
0.5
2
µA
µA
−
V
V
V
Emitter cutoff current
I
DC current transfer ratio
27
−
0.5
600
−
−
−
h
CE/I
C
=10V/10mA
=20mA/4mA
=10V/10mA
V
I
C/I
B
Collector-emitter saturation voltage
V
h
h
−
1
V
CE/I
C
hFE pairing
Transition frequency
f
T
1500
0.95
−
1.6
∗
MHz
pF
V
V
CE/I
C
=10V/10mA, f=200MHz
Output capacitance
Cob
CB/f=10V/1MHz, I =0A
E
∗Transition frequency of the device.
相关型号：
EMX51T2R
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, EMT6, SC-107C, 6 PIN
ROHM
EMX52T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, EMT6, SC-107C, 6 PIN
ROHM
EMY1T2R
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT5, 5 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明