HMS88T1608L [ETC]
Microcontroller ; 微控制器\n型号: | HMS88T1608L |
厂家: | ETC |
描述: | Microcontroller
|
文件: | 总2页 (文件大小:31K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMS88T1608L/16L
HMS88T1608L/16L
8-BIT CMOS MCU BASED SAFEGUARDED SMARTCARD IC
WITH 8176/16384 BYTES EEPROM
FEATURES
• Extended voltage Operation
- VCC Range: 2.7V ~ 5.5V
• 8 Bit Architecture CPU
HMS88T1608L/16L
C1
• 16K Bytes User ROM, Sector Combinative
• 2.7K Bytes System ROM
• 384 Bytes RAM
VCC
RST
CLK
GND
C5
C6
RFU
/VPP
C2
C3
C4
• 8176/16384 Bytes EEPROM, Sector Combina-
tive:
IO1
C7
C8
- Highly Reliable CMOS EEPROM Technology
- 10 Years Data Retention
IO2
RFU
(OPTION)
- 300,000 Erase/Write Cycles Endurance
- Protected One Time Programmable Block
(32 or 64 Bytes)
Figure 1. Pin Configuration
- 1 to 32 Bytes Block Erase or Write in a Single
Cycle Programming
VCC
Supply Voltage
Reset
• Serial Access, ISO 7816-3 Compatible
• Standby Mode for Power Saving
RST
CLK
RFU
GND
I/O1
I/O2
Clock
• Up to 5 MHz Internal Operating Frequency
Reserved for future
Ground
• Very High Security Features Including EEP-
ROM flash erase
Data Input/Output
Data Input/Output(Option)
Table 2. Contact Format
• Contact Assignment Compatible ISO7816-2
• ESD Protection Greater than 5,000V
• 2 Operating Configurations
- Issuer
- User
• Meets GSM 11.11 and 11.12 Specifications
MAY 2001
1/2
2001 Hynix Semiconductor Inc. All right reserved.
HMS88T1608L/16L
INTRODUCTION
The HMS88T1608L/16L, a member of the standard
HMS88T16XYZ family, are a serial access microcon-
trollers especially designed for very large volume and
cost competitive smart cards applications.
As all the other HMS88T16XYZ family members, the
HMS88T1608L/16L are fully compatible with the ISO
standards for smart card applications.
The HMS88T1608L/16L can be delivered as:
either in sawn or un-sawn 6inch wafers, 180 micron
thickness as well as in micromodule package.
The HMS88T1608L/16L are based on an 8 bit CPU
core and include on chip memories: 384 bytes RAM,
16K bytes ROM, 8176/16384 bytes EEPROM struc-
tured in two main sectors to be used in different com-
binations, as described below.
Reliability data related to the HMS88T1608L/16L
products manufactured using Hynix 0.7µm CMOS
EEPROM technology guarantees data retention up to
10 years and endurance up to 300,000 erase/write
cycles.
VPP GENERATION
SYSTEM
ROM
RAM
384 BYTES
USER ROM
16K BYTES
8 BIT CPU
EEPROM 8176/16384 BYTES
SECTOR COMBINATIVE
2.7K BYTES
Sector
B
Sector
B
Sector
A
Sector
A
MEMORY ACCESS CONTROL MATRIX
INTERNAL BUS
SERIAL I/O’s
INTERFACE
RANDOM NUMBER
GENERATOR
SECURITY LOGIC
I/O 1
I/O 2
VCC
CLK
RST
GND
Figure 3. HMS88T1608L/16L Block Diagram
2/2
MAY 2001
2001 Hynix Semiconductor Inc. All right reserved.
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