IRFBF32 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 900V V（ BR ） DSS | 2.5AI （D ） | TO- 220AB
| 型号： | IRFBF32 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220AB
|
| 文件： | 总1页 (文件大小：44K) |
| 下载： | 下载PDF数据表文档文件 |
IRFBF32-006PBF
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBF32-013
Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBG20
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
413
IRF
IRFBG20
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
235
VISHAY
IRFBG20PBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
45
VISHAY
IRFBG20PBF
HEXFET㈢ Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
72
IRF
IRFBG20STRR
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
IRFBG20STRRPBF
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
IRFBG22
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.2A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
29
ETC
IRFBG22-011
Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRFBG30
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
715
IRF
IRFBG30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
279
VISHAY
IRFBG30
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
69
KERSEMI
IRFBG30
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
IRF
IRFBG30-001PBF
Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
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