IRGC50B120KB [ETC]
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP ; 晶体管| IGBT | N -CHAN | 1.2KV V（ BR ） CES |芯片\n
| 型号： | IRGC50B120KB |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93870
IRGC50B120KB
Die in Wafer Form
Features
1200V
C
• GEN5 Non Punch Through (NPT) Technology
• Low VCE(on)
• 10µs Short Circuit Capability
• Square RBSOA
IC(nom)=50A
VCE(on)typ.=2.15V@
IC(nom) @25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
• Positive VCE(on) Temperature Coefficient
G
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
E
• Excellent Current Sharing in Parallel Operation
Electrical Characteristics (Wafer Form)
Parameter
Description
Guaranteed (min, max)
1.3V min, 1.53V max
1200V min
TestConditions
VCE(on)
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 500µA, VGE = 0V
VGE = VCE , TJ =25°C, IC = 500µA
TJ = 25°C, VCE = 1200V
V
(BR)CES
VGE(th)
ICES
4.4V min, 6.0V max
20µAmax
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 1.1µA max
TJ = 25°C, VGE = +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.364" x 0.364"
Wafer Diameter
150mm, with std. < 100 > flat
185µm, +/-15µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5346
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
NOTES:
9.246
[.364]
1. ALL DIME NS IONS AR E S HOWN IN MIL L IME T E R S [I NCHE S ].
7.854
[.309]
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
S = SOURCE
G = GAT E
E = EMITTER
SK = SOURCE KELVIN
IS = CURRENTSENSE
4. DIMENS IONAL T OLERANCES :
BONDING PADS:
WI DT H
<
<
>
>
0.635 TOLERANCE = + /- 0.013
7.757
[.305]
EMITTER
[.0250] TOLERANCE = + /- [.0005]
0.635 TOLERANCE + /- 0.025
1.205
[.047]
&
=
LENGTH
[.0250] TOLERANCE = + /- [.0010]
G
OVERALL DIE:
WI DT H
<
<
>
>
1.270 TOLERANCE = + /- 0.102
[.050] TOLERANCE = + /- [.004]
1.270 TOLERANCE = + /- 0.203
[.050] TOLERANCE = + /- [.008]
&
1.196
[.047]
01-5346
LENGTH
www.irf.com
2/14/2000
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