JAN2N7237 [ETC]
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA ; 晶体管| MOSFET | P沟道| 200V V（ BR ） DSS | 11A I（ D） | TO- 254AA\n
| 型号： | JAN2N7237 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA
|
| 文件： | 总19页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 13 November
2002.
INCH-POUND
MIL-PRF-19500/595D
13 August 2002
SUPERSEDING
MIL-PRF-19500/595C
26 August 1996
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type die, with avalanche energy ratings (E
and E ) and maximum
AS
AR
avalanche current (I ).
AR
* 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (T0-267AB) for surface mount devices, and figure 3
for JANHC and JANKC (die) dimensions.
* 1.3 Maximum ratings (TC = +25°C, unless otherwise specified).
Min
Type
V(BR)DSS PT (1)
PT
TA =
VGS ID1 (2)
TC =
I
D2 (2)
TC =
IS
IDM
(3)
Top
and
TSTG
Rθ
max
JC
VGS = 0
ID = -1.0
mA dc
V dc
TC =
+25°C +25°C
+25°C +100°C
W
W
V dc
A dc
A dc
A dc
A(pk)
°C
°C/W
2N7236, 2N7236U
2N7237, 2N7237U
-100
-200
125
125
4.0
4.0
-18
-11
-11
-7
-18
-11
-72
-44
-55 to +150
-55 to +150
1.0
1.0
±20
±20
See footnotes next page.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited
MIL-PRF-19500/595D
* 1.3 Maximum ratings - continued.
Type
IAR
(2)
EAS
EAR
rDS(on) max (4)
VGS = -10 V dc
ID = ID2
TJ = +25°C
TJ = +150°C
A
mj
mj
ohm
ohm
2N7236, 2N7236U
2N7237, 2N7237U
-18
-11
500
500
12.5
12.5
0.20
0.51
0.400
1.122
TJ(max) - TC
(1) Derate linearly 1.0 W/°C for TC > +25°C; PT = ------------------------
Rθ
JX
-
T J( max ) TC
x( at
=
(2)
I D
(
RθJX) RDS(on) T J( max )
(3) IDM = 4 x ID as calculated by footnote (2).
(4) Pulsed (see 4.5.1).
* 1.4 Primary electrical characteristics. TC = +25°C (unless otherwise specified).
Max IDSS1
GS = 0
VDS = 80 percent
of rated VDS
Max rDS(on)1 (1)
ID = ID2
Type
Min V(BR)DSS
VGS = 0
ID = -1.0 mA dc
VGS(th)1
V
VDS ≥ VGS
VGS = 10 V
ID = -0.25 mA dc
V dc
V dc
Ohms
µA dc
Min
-2.0
-2.0
Max
-4.0
-4.0
2N7236, 2N7236U
2N7237, 2N7237U
-100
-200
25
25
0.20
0.51
(1) Pulsed (see 4.5.1).
2
MIL-PRF-19500/595D
Dimensions
Millimeters
Notes
Ltr
Inches
Min
Max
.545
.260
.045
.750
Min
13.59
6.32
Max
13.84
6.60
BL
CH
LD
.535
.249
.035
.510
0.89
1.14
LL
12.95
14.48
LO
.150 BSC
.150 BSC
.139
3.81 BSC
3.81 BSC
LS
MHD
MHO
TL
.149
.685
.800
.050
.545
3.53
3.78
17.40
20.32
1.27
.665
.790
.040
.535
16.89
20.07
1.02
3, 4
3, 4
TT
TW
13.59
13.84
Term
1
Drain
Term
2
Source
Gate
Term
3
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Glass meniscus included in dimension TL and TW.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for TO-254AA (2N7236 and 2N7237).
3
MIL-PRF-19500/595D
Dimensions
Inches
Symbol
Millimeters
Min
.620
.445
Max
.630
.455
.142
.020
.420
Min
15.75
11.30
Max
16.00
11.56
3.60
0.50
10.67
BL
BW
CH
LH
.010
.410
0.26
10.41
LL
LL
1
2
.152
.162
3.86
4.11
.210 BSC
.105 BSC
5.33 BSC
2.67 BSC
LS
LS
1
2
.370
.135
.030
.035
.380
.145
9.40
3.43
0.76
0.89
9.65
3.68
LW
LW
1
2
Q
1
Q
2
Term 1
Term 2
Term 3
Drain
Gate
Source
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for information only.
3. The lid shall be electrically isolated from the drain, gate and source.
4. Dimensioning and tolerancing shall be in accordance with ASME Y14.5M.
* FIGURE 2. Dimensions and configuration of surface mount package outline (T0-267AB), 2N7236U and
2N7237U).
4
MIL-PRF-19500/595D
A version
Inches mm
.018 0.46
.025 0.64
.027 0.69
.042 1.07
.060 1.52
.063 1.60
.162 4.11
.170 4.32
.192 4.88
.219 5.56
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for information only.
3. Unless otherwise specified, tolerance is .005 inch (0.13 mm).
4. Physical characteristics of the die thickness = .0187 inch (0.47 mm).
5. Back metal: Cr - Ni - Ag.
6. Top metal: Al.
7. Back contact: Drain.
8. See 6.5 for ordering information.
* FIGURE 3. Physical dimensions JANHC and JANKC die.
5
MIL-PRF-19500/595D
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
-
Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
* 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1 (T0-254AA), 2 (T0-267AB, surface mount), and 3 (die) herein. Methods used for
electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3
(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages.
* 3.4.1 Lead formation material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is
permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a
choice of lead formation material or finish is desired, it shall be specified in the acquisition document (see 6.2).
When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance
with screen 14 of table IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, group A,
subgroup 2 herein.
6
MIL-PRF-19500/595D
* 3.4.2 Internal construction. Multiple chip construction shall not be permitted to meet the requirements of this
specification.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. However, the following handling practices are recommended (see 3.5).
a. Devices should be handled on benches with conductive and grounded surface.
b. Ground test equipment, tools, and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f. Maintain relative humidity above 50 percent if practical.
g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage
to any lead.
h. Gate must be terminated to source. R ≤ 100 k, whenever bias voltage is to be applied drain to source.
* 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
* 3.7 Electrical test requirements. The electrical test requirements shall be table I, group A as specified herein.
* 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500.
* 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
* 4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow
is allowed for qualification inspection in accordance with figure 2 of MIL-PRF-19500.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
7
MIL-PRF-19500/595D
* 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this
revision to maintain qualification.
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
Measurement
MIL-PRF-19500)
JANS level
JANTX and JANTXV level
Gate stress test (see 4.5.5)
(1)
(1)
Gate stress test (see 4.5.5)
Method 3470 of MIL-STD-750. (see 4.5.4)
Method 3161 of MIL-STD-750 (see 4.5.3)
Method 3470 of MIL-STD-750. (see 4.5.4)
Method 3161 of MIL-STD-750 (see 4.5.3)
Subgroup 2 of table I herein
(1)
(1) 9
IGSS1, IDSS1, subgroup 2 of table I herein;
10
11
Method 1042 of MIL-STD-750, test condition Method 1042 of MIL-STD-750, test condition
B
B
I
GSS1, IDSS1, rDS(on)1, VGS(th)1
I
GSS1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
∆IGSS1 = ±20 nA dc or ± 100 percent of initial
value, whichever is greater.
∆IDSS1 = ±25 µA dc or ± 100 percent of initial
value, whichever is greater.
Subgroup 2 of table I herein.
12
13
Method 1042 of MIL-STD-750, test condition Method 1042 of MIL-STD-750, test condition
A
A or TA = +175°C and t = 48 hours
Subgroup 2 and 3 of table I herein.
Subgroup 2 of table I herein.
∆IGSS1 = ±20 nA dc or ± 100 percent of initial ∆IGSS1 = ±20 nA dc or ± 100 percent of initial
value, whichever is greater. value, whichever is greater.
∆IDSS1 = ±25 µA dc or ± 100 percent of initial ∆IDSS1 = ±25 µA dc or ± 100 percent of initial
value, whichever is greater.
value, whichever is greater.
∆rDS(on)1 = ±20 percent of initial value.
∆VGS(th)1 = ±20 percent of initial value.
∆rDS(on)1 = ±20 percent of initial value.
∆VGS(th)1 = ±20 percent of initial value.
(1) Shall be performed anytime before screen 10.
* 4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, (appendix
H), as a minimum die shall be 100 percent probed in accordance with table I, group A, subgroup 2, except test
current shall not exceed 20 A.
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate
flow is allowed for conformance inspection in accordance with figure 4, appendix E of MIL-PRF-19500.
8
MIL-PRF-19500/595D
* 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. End-point electrical measurements shall be in accordance with table I, group A, subgroup 2 herein.
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.
Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup
2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
1051
Condition
B3
B3
Test condition G.
2037
Test condition A. All internal wires for each device shall be pulled separately. If
group B3 is to be continued to C6, strength test may be performed after C6.
B4
B5
1042
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No
heat sink nor forced air cooling on the device shall be permitted during the "on" cycle.
A separate sample may be pulled for each test. Accelerated steady-state reverse
bias; test condition A, VDS = rated, TA = +175°C, t = 120 hours, read and record
V
BR(DSS) (pre and post) at ID = -1 mA dc. Read and record IDSS (pre and post) in
accordance with table I, subgroup 2 herein. VBR(DSS) delta cannot exceed 10 percent.
Bond strength (Al-Au die interconnects only); test condition A.
See 4.5.2.
B5
B6
2037
3161
* 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B2
Method
1051
Condition
Test condition G.
B3
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta
requirements shall be in accordance with table I, group A, subgroup 2 herein.
Subgroup
C2
Method Conditions
2036
1042
Test condition A; weight = 10 pounds, t = 10 s (not applicable for surface mount
devices).
C6
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table II herein. Electrical
measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
9
MIL-PRF-19500/595D
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161
of MIL-STD-750. RθJC(max) = 1.0°C/W for TO-254AA case style devices and surface mount devices. The following
parameter measurements shall apply:
a. Measuring current (IM)..................................10 mA.
b. Drain heating current (IH)..............................3.3 A minimum (2.5 A minimum for surface mount devices).
c. Heating time (tH)...........................................Steady-state (see MIL-STD-750, method 3161 for definition).
d. Drain-source heating voltage (VH)................25 V minimum (20 V minimum for surface mount devices).
e. Measurement time delay (tMD)......................30 to 60 µs maximum.
f. Sample window time (tSW)............................10 µs maximum.
4.5.3 Thermal impedance (ZθJC measurements). The ZθJC measurements shall be performed in accordance with
method 3161 of MIL-STD-750. The maximum limit (not to exceed the table I, group A, subgroup 2 limit or figure 4
thermal impedance curve) for ZθJC in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by
means of statistical process control. When the process has exhibited control and capability, the capability data shall
be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established,
monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R
chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for
engineering evaluation and disposition. This procedure may be used in lieu of an in line monitor. The following
parameter measurements shall apply:
a. Measuring current (IM)..................................10 mA.
b. Drain heating current (IH)..............................3.3 A minimum (2.5 A minimum for surface mount devices).
c. Heating time (tH)...........................................100 ms minimum (25 ms minimum for surface mount devices).
d. Drain-source heating voltage (VH)................25 V minimum (20 V minimum for surface mount devices).
e. Measurement time delay (tMD)......................30 to 60 µs maximum.
f. Sample window time (tSW)............................10 µs maximum.
4.5.4 Single pulse avalanche energy (EAS).
a. Peak current (ID).............................................IAR(max).
b. Peak gate voltage (VGS) .................................-10 V.
c. Gate to source resistor (RGS)..........................25 ≤ RGS ≤ 200 Ω.
d. Initial case temperature..................................+25°C +10°C, -5°C.
V
− V
e. Inductance......................................................
mH minimum.
2EAS
BR
DD
2
VBR
I
(
)
D1
f. Number of pulses to be applied ......................1 pulse minimum.
g. Supply voltage (VDD) ......................................25 V for 2N7236, 2N7236U, -50 V for 2N7237, 2N7237U.
4.5.5 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum.
10
MIL-PRF-19500/595D
* TABLE I. Group A inspection.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
2071
Condition
Min
Max
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
3161
3407
See 4.5.3
1.30
Z θ
°C/W
JC
Breakdown voltage,
drain to source
Bias condition C, VGS = 0V, ID = 1
mA dc
V (BR)DSS
2N7236, 2N7236U
2N7237, 2N7237U
-100
-200
V dc
V dc
Gate to source voltage
(threshold)
3403
3411
3413
3421
VGS(th)1
-2.0
-4.0
±100
-25
V dc
V
DS ≥ VGS, ID = -.25 mA
Gate reverse current
IGSS1
nA dc
Bias condition C, VGS = ±20 V dc,
DS = 0 V dc
V
Drain current
Bias condition C, VGS = 0 V dc,
DS = 80 percent of rated VDS
IDSS1
µA dc
V
Static drain to source
on-state resistance
2N7236, 2N7236U
VGS = 10 V dc, condition A, pulsed
(see 4.5.1), ID = rated ID2 (see 1.3)
rDS(on)1
0.20
0.51
Ω
Ω
2N7237, 2N7237U
Static drain to source
on-state resistance
3421
4011
VGS = -10 V dc, condition A,
pulsed (see 4.5.1), ID = rated ID1
(see 1.3)
rDS(on)2
2N7236, 2N7236U
2N7237, 2N7237U
0.22
0.52
Ω
Ω
Forward voltage (source
drain diode)
VGS = 0 V dc
VSD
1.5
V
ID = rated ID1, pulsed (see 4.5.1)
2N7236, 2N7236U
2N7237, 2N7237U
-4.2
-4.6
V
V
See footnotes at end of table.
11
MIL-PRF-19500/595D
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
Condition
Min
Max
Subgroup 3
High temperature
operation:
TC = TJ = +125°C
Gate reverse current
3411
3413
3413
3403
3421
Bias condition C
GS = ±20 V dc, VDS = 0 V dc,
IGSS2
nA dc
mA dc
mA dc
V dc
±200
-1.0
V
Drain current
Bias condition C, VGS = 0 V dc,
DS = 100 percent of rated VDS
IDSS2
V
Drain current
Bias condition C, VGS = 0 V dc,
IDSS3
-0.25
VDS = 80 percent of rated VDS
Gate to source voltage
(threshold)
VGS(th)2
-1.0
VDS ≥ VGS, ID = -0.25 mA
Static drain to source
on-state resistance
2N7236, 2N7236U
VGS = -10 V dc, pulsed (see
4.5.1), ID = rated ID2 (see 1.3)
rDS(on)3
0.34
1.10
Ω
Ω
2N7237, 2N7237U
Low temperature
operation:
TC = TJ = -55°C
Gate to source voltage
(threshold)
3403
3472
VGS(th)3
-5.0
V dc
V
DS ≥ VGS, ID = -0.25 mA
Subgroup 5
Switching time test
ID = rated ID2 (see 1.3), VGS = -10
V dc, gate drive impedance = 9.1
Ω, VDD = 50 percent of VBR(DSS)
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
35
85
85
65
ns
ns
ns
ns
Turn-off delay time
Fall time
See footnotes at end of table.
12
MIL-PRF-19500/595D
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
3474
Condition
Min
Max
Subgroup 5
Safe operating area test
(high voltage)
See figure 5; tp = 10 ms, VDS = 80
percent of rated VBR(DSS), VDS
200 V maximum
=
Electrical
See table I, group A, subgroup 2
measurements
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
2N7236, 2N7236U
2N7237, 2N7237U
Qg(on)
Qgs
Qgd
trr
60
60
nC
nC
Gate to source charge
2N7236, 2N7236U
2N7237, 2N7237U
13
15
nC
nC
Gate to drain charge
2N7236, 2N7236U
2N7237, 2N7237U
35.2
38
nC
nC
Reverse recovery time
3473
di/dt ≤ 100 A/µs, VDD ≤ 30 V,
ID = ID1, (see 1.3)
2N7236, 2N7236U
2N7237, 2N7237U
280
440
ns
ns
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following end-point measurement only (not intended for screen 13): JANS,
table VIa of MIL-PRF-19500, group B, subgroups 3 and 4; JANTX and JANTXV, table VIb of
MIL-PRF-19500, group B, subgroups 2 and 3; and table VII of MIL-PRF-19500, group C, subgroup 6, and
table IX of MIL-PRF-19500, group E, subgroup 1.
13
MIL-PRF-19500/595D
* TABLE II. Group E inspection (all quality levels except JANHC and JANKC) for qualification only.
Inspection
MIL-STD-750
Conditions
Sampling
plan
Method
1051
Subgroup 1
22 devices
c = 0
Temperature cycling
500 cycles, test condition G
Hermetic Seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2 1/
See table I, group A, subgroup 2
45 devices
c = 0
Steady-state reverse bias
Electrical measurements
Steady-state gate bias
Electrical measurements
Subgroup 3
1042
1042
Condition A, 1,000 hours
See table I, group A, subgroup 2
Condition B, 1,000 hours
See table I, group A, subgroup 2
Not applicable
Subgroup 4
5 devices
c = 0
Thermal resistance
Subgroup 5
3161
3469
See 4.5.2
Not applicable
Subgroup 6
5 devices
c = 0
Repetitive avalanche energy
Peak current IAR = ID;
Peak gate voltage VGS = -10 V;
Gate to source resistor,
R
GS 25 ≤ RGS ≤ 200 ohms
Temperature = TJ = +150°C +0, -10°C.
Inductance =
V
− V
mH minimum
2EAR
BR
DD
2
VBR
I
(
)
D1
Number of pulses to be applied = 3.6 X 108;
Supply voltage (VDD) = -25 V for 2N7236 and
2N7236U, (VDD) = -50 V for 2N7237 and
2N7237U, time in avalanche = 2 µs min., 20 µs
max., frequency = 500 Hz minimum.
Electrical measurements
See table I, group A, subgroup 2
1/ A separate sample for each test may be pulled.
14
MIL-PRF-19500/595D
FIGURE 4. Thermal response curves.
15
MIL-PRF-19500/595D
2N7236, 2N7236U
2N7237, 2N7237U
* FIGURE 5. Safe operating area graphs.
16
MIL-PRF-19500/595D
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
* 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
* 6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
e. Type designation and product assurance level and for die acquisition, specify the JANHC or JANKC letter
version (see figure 3).
* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
* 6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and
user's Part or Identifying Number (PIN). This information in no way implies that manufacturer's PIN's are suitable as
a substitute for the military PIN.
Military PIN
2N7236
2N7237
2N7236U
2N7237U
Manufacturer's CAGE
Manufacturer's and user's PIN
IRFM9140
59993
59993
59993
59993
IRFM9240
IRFM9140
IRFM9240
17
MIL-PRF-19500/595D
* 6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example
JANHCA2N7236) will be identified on the QML.
JANC ordering information
Military PIN
Manufacturer
59993
59993
2N7236
2N7237
JANHCA2N7236
JANHCA2N7219
JANKCA2N7236
JANKCA2N7219
*
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2644)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
18
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/595D
2. DOCUMENT DATE
13 August 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES
2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
850-0510
FAX
614-692-6939
EMAIL
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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