JANKCA1N5553_技术文档

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 19 July 2004.

INCH-POUND

MIL-PRF-19500/420H

19 April 2004

SUPERSEDING

MIL-PRF-19500/420G

30 December 2002

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,

JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,

JANHCE, JANKCA, JANKCD, AND JANKCE

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

*

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor

diodes. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US

through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.

1.3 Maximum ratings. Unless otherwise specified, T_C= +25°C and ratings apply to all case outlines.

Col. 1

Type

Col. 3

Col. 4

Col. 5

Col. 6

Col. 7

Col. 8

Col. 2

I

T

J

I

T

STG

O1

T = +55°C;

FSM

= 2 A dc

O

O2

V

RWM

V

(BR)

I

p

T =

A

L

and

(BR)min

L = .375 inch t = 1/120 s

+55°C

V

(1) (2) (3)

T = +55°C

(2) (4)

A

V dc

A dc

A(pk)

A dc

°C

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

200

400

600

800

200

400

600

800

5

100

3

-65 to +200

-65 to +175

1N5554, 1N5554US 1,000

1,000

(1) Derate linearly at 41.6 mA/°C above T = +55°C at L = .375 inch (9.53 mm).

L

(2) An I of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the

O

maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).

Barometric pressure reduced:

1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).

1N5553, 1N5554

- 33 mmHg (70,000 feet).

(3) Does not apply to surface mount devices.

(4) Derate linearly at 25 mA/°C above T = +55°C.

A

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconduction@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/420H

1.4 Primary electrical characteristics. Unless otherwise specified, T = +25°C.

A

I

at T = +100°C

A

R

θJL

R2

V at I = 9.0 A(pk)

1 percent duty cycle,

I

R1

f

R

θJEC

Type

8.3 ms max pulse width

Min V(pk)

Max V(pk)

See (1)

µA dc (max) at V (V dc) µA dc (max) at V (V dc)

R

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

0.6

1.2

1.3

1.0

200

400

600

800

1,000

75

200

400

600

800

1,000

(1) R_θJL≤ 22°C/W for L = .375 inch (9.52 mm).

_θJEC≤ 11°C/W for L = 0 (US version).

R

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

*

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

*

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

*

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil

-

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA

19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

2

MIL-PRF-19500/420H

Dimensions

Ltr

Notes

Inches

Millimeters

Min

.130

.115

.037

.900

Max

.300

.180

.042

Min

3.30

2.92

0.94

Max

BL

BD

LD

LL

7.62

4.57

1.07

3

3, 4

1.300 22.86 33.02

.050 1.27

LU

NOTES:

1.

2.

3.

Dimensions are in inches.

Millimeters are given for general information only.

Dimensions BL and BD include all components of the diode periphery

except the sections of leads over which the diameter is controlled.

Dimension BD shall be measured at the largest diameter.

Dimension LU shall include the sections of the lead over

which the diameter is uncontrolled. This uncontrolled area

is defined as the zone between the edge of the diode body

and extending .050 inch (1.27 mm) onto the leads.

In accordance with ASME Y14.5M, diameters are

4.

5.

6.

equivalent to φx symbology.

* FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554, (similar to DO-41).

3

MIL-PRF-19500/420H

Dimensions

Ltr

Inches

Min

Millimeters

Max

.275

.180

.034

Min

5.08

3.48

0.48

0.08

Max

6.99

4.57

0.86

BL

BD

ECT

S

.200

.137

.019

.003

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are pre-solder dip.

4. Minimum clearance of glass body to mounting surface on all orientations.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx

symbology.

* FIGURE 2. Physical dimensions of 1N5550US through 1N5554US.

4

MIL-PRF-19500/420H

Ltr

Dimensions

Inches Millimeters

Min

Max

.091

.078

.014

Min

2.16

1.83

0.20

Max

2.31

1.98

0.36

A

B

C

.085

.072

.008

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics are:

Top (cathode) Au Thickness = 10,000Å minimum,

Back (anode) Au Thickness = 4,000Å minimum.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 3. JANHCA and JANKCA (A-version) die dimensions.

5

MIL-PRF-19500/420H

Ltr

Dimensions

Inches Millimeters

Min

Max

.092

.077

.035

Min

2.24

1.78

0.18

Max

2.34

1.96

0.89

A

B

C

.088

.070

.007

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics are

Top (cathode) Au Thickness = 10,000Å minimum,

Back (anode) Au Thickness = 4,000Å minimum.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 4. JANHCB (B-version) die dimensions.

6

MIL-PRF-19500/420H

Ltr

Dimensions

Inches Millimeters

Min

Max

.065

.058

.014

Min

1.52

1.32

0.20

Max

1.65

1.47

0.36

A

B

C

.060

.052

.008

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics are

Top (cathode) Au Thickness = 10,000Å minimum,

Back (anode) Au Thickness = 4,000Å minimum.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx

symbology.

* FIGURE 5. JANHCC (C-version) die dimensions.

7

MIL-PRF-19500/420H

Ltr

Inches

Millimeters

Min Max

Min

.081

.055

.007

Max

.087

.061

.012

A

B

C

2.05

1.40

0.18

2.20

1.55

0.30

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics are

Top (anode) Al Thickness = 60,000Å minimum.

Back (cathode) Au Thickness = 2,500Å minimum,

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 6. JANHCD and JANKCD (D-version) die dimensions.

8

MIL-PRF-19500/420H

Ltr

Inches

Millimeters

Min Max

Min

.081

.055

.007

Max

.087

.061

.012

A

B

C

2.05

1.40

0.18

2.20

1.55

0.30

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics are

Top (anode) Al Thickness = 60,000Å minimum.

Back (cathode) Al/Ti/Ni/Ag Thickness = 2,500Å minimum,

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 7. JANHCE and JANKCE (E-version) die dimensions.

9

MIL-PRF-19500/420H

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:.

*

EC .........................End cap.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through

1N5554US, and figures 3, 4, 5, 6, and 7 (JANHC and JANKC).

3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with

MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is

limited to 175°C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

6.2).

3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with

high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond

shall be in accordance with the requirements of category I in MIL-PRF-19500. US version devices shall be

structurally identical to the non-surface mount devices except for lead terminations.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the

cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial

container.

3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately

for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I

herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

10

MIL-PRF-19500/420H

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification

only. In case qualification was awarded to a prior revision of the specification sheet that did not request the

performance of table II tests, the tests specified in table II herein shall be performed on the first inspection lot to this

revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as

specified herein.

* 4.3 Screening (JANS, , JANTXV and JANTX levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500 (appendix E), and as specified herein. Specified electrical measurements shall be made in

accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

table IV of

MIL-PRF-19500)

JANS level

JANTXV and JANTX level

Not required

Required (JANTXV only)

Not required

1a

1b

2

Required

Optional

3a

3b

(1) 3c

4

Required

Not applicable

Thermal impedance (see 4.3.1 and 4.4.1)

Required

Not applicable

Thermal impedance (see 4.3.1 and 4.4.1)

Not applicable

5

Not applicable

6

Not applicable

7a

7b

8

Not applicable

Optional

Required

V_F1and I_R1

Not applicable

Optional

Not required

Not applicable

9

Method 1038 of

MIL-STD-750, condition A

V_F1and I_R1

10

MIL-STD-750, condition A

V_F1and I_R1; ∆V_f1≤ ±0.1 V dc

∆I_R1±250 nA dc or 100 percent of initial

value whichever is greater.

11

12

(2) 13

Required, see 4.3.2

Subgroups 2 and 3 of table I herein;

∆I_R1≤ 100 percent of initial reading or 250

nA dc, whichever is greater.

∆V_F1≤ ±.1 V dc change from initial value.

Scope display evaluation (see 4.5.3)

Subgroup 2 of table I herein;

∆I_R1≤ 100 percent of initial reading or 250 nA

dc, whichever is greater.

∆V_F1≤ ±.1 V dc change from initial value.

Scope display evaluation (see 4.5.3)

Not applicable

14a

(3) 14b

15

Not applicable

Required

Not required

16

Required

Not required

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) Z

is not required in screen 13, if already previously performed.

θJX

(3) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after

temperature cycling.

11

MIL-PRF-19500/420H

* 4.3.1 Thermal impedance Z_θJXmeasurements for screening. The Z_θJXmeasurements shall be performed in

accordance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using

statistical methods and it shall not exceed the table I, subgroup 2 herein. See 4.4.1 for test conditions.

4.3.1.1 Thermal impedance (Z_θJXmeasurements) for initial qualification or requalification. The Z

θJX

measurements shall be performed in accordance with method 3101 of MIL-STD-750 (read and record date Z_θJX).

Z

_θJXshall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted.) Twenty-

two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of

parts. Measurements conditions shall be in accordance with 4.4.1.

* 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2, 4.5.2.1) adjust I_Oto achieve

the required T .

J

4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of

MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2.

Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.

* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein. The following test conditions shall be used for Z_θJX, table I: Z_θJX≤ 1.5°C/W.

a. I_M............................. 1 mA to 10 mA.

b. I_H.............................. 5 A minimum.

c. t_H.............................. 10 ms.

d. t_MD........................... 100 µs maximum.

e.

t_SW........................... 5 µs maximum.

12

MIL-PRF-19500/420H

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.

Electrical measurements (end-points) requirements shall be in accordance with the applicable inspections of table I,

subgroup 2 herein. For delta requirements see table III herein.

* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall

be at the test conditions of the original sample.

Subgroup

Method Condition

B3

1056

1051

0°C to +100°C, 25 cycles.

-55°C to +175°C, 100 cycles.

B3

4066

I

= rated I

(see col. 5 of 1.3); 10 surges of 8.3 ms each at 1 minute

FSM

intervals, superimposed on I = 0, V

= 0.

RWM

O

B4

B5

1037

1027

I_O= I_O2rated minimum (see col. 4 of 1.3)

V_R= rated V_RWM(see col. 3 of 1.3 and 4.5.5); 2,000 cycles.

I_O= I_O2rated minimum (see col. 4 of 1.3); apply V_R= rated V_RWM(see col. 3 of 1.3

and 4.5.2) adjust I_Oto achieve T_Jminimum; f = 50-60 Hz.

Option 1: T_A= + 30°C max. ; T_J= 225°C minimum; t = 216 hours; n = 45 c = 0.

or

Option 2: T_A= + 100°C max. ; T_J= 275°C minimum; t = 96 hours, n = 22,

c = 0.

*

B6

B7

3101

R

_θJL(maximum) ≤ 22°C/W; L = .375 inch (9.53 mm).

or

4081

For surface mount devices (US version), R_θJEC≤ 11°C/W.

Peak reverse power, see 4.5.5. P

≥ 1,000 W. Test shall be performed on

RM

each sublot; sampling plan n = 10, c = 0, electrical end-points, see table I,

subgroup 2 herein.

* 4.4.2.2 Group B inspection, table VIb (JAN, , JANTX and JANTXV of MIL-PRF-19500).

Subgroup

Method Condition

B2

1056

1051

0°C to +100°C, 10 cycles.

-55°C to +175°C, 25 cycles.

*

B3

B5

1027

T = 150°C minimum (see 4.5.2.1). Adjust I to achieve the required T ; apply

J

O

J

V

R

= rated V

RWM

(see col. 3 of 1.3), f = 50-60 Hz (see 4.5.2).

Not applicable .

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable.

13

MIL-PRF-19500/420H

* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.

Subgroup

Method Condition

C2

1056

1051

2036

0°C to +100°C, 10 cycles.

-55°C to +175°C, 25 cycles.

Tension: Test condition A; weight = 5 pounds; t = 30 seconds.

Lead fatigue: Test condition E; weight 2 pounds.

NOTE: Both tension and lead fatigue are not applicable for US devices.

See 4.5.5.

*

C5

C6

3101

or

4081

1027

T = 150°C minimum (see 4.5.2.1). I = I = 3 A dc minimum; adjust I to

J

O

O2

O

achieve the required T ; apply V = rated V

(see col. 3 of 1.3), f = 50-60 Hz

J

R

RWM

(see 4.5.2.1).

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable.

4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak

voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified

average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180

degrees, nor less than 150 degrees.

* 4.5.2.1 Free air burn-in. Deliberate heat sinking, baffles to create an oven, forced air-cooling or heating is

prohibited unless otherwise approved by the qualifying activity. The use of a current limiting or ballast resistor is

permitted provided that each DUT still sees the full P_t(minimum) and that the minimum applied voltage, where

applicable, is maintained through out the burn-in period. T_J= 135°C minimum for screening and T_J= 150°C for 4.4.2

and 4.4.3 life tests. Use method 3100 of MIL-STD-750 to measure T_J.

4.5.3 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method

4023 of MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only, with

the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. The

reverse current (I_BR) over the knee shall be 500 µA peak.

14

MIL-PRF-19500/420H

4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test

method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with group E herein and shall be

included in the qualification report. Forced moving air or draft shall not be permitted across the devices during

test. The maximum limit under these test condition shall be R_θJL≤ 22°C/W for L = .375 (9.53 mm);

R_θJEC≤ 11°C/W for L= 0 (US version). The following conditions shall apply:

a. I_H

b. t_H

c. I_M

d. t_MD

.............................2 A minimum.

.............................Thermal equilibrium.

.............................1.0 mA to 10 mA.

.............................100 µs maximum.

The device shall be allowed to reach equilibrium at current I_Hbefore the measurement shall be made (t_H≥ 25 sec).

LS = Lead spacing = .375 inch (9.53 mm) minimum for leaded devices and LS = 0 minimum for unleaded devices as

defined (see figure 8):

FIGURE 8. Mounting arrangement.

4.5.5 Peak reverse power test. A 20 microsecond half-sine waveform of current shall be used and peak reverse

power shall be determined by the product of peak reverse voltage and peak reverse current. A 20 microsecond

square waveform may also be used with the approval of the qualifying activity (see figure 9).

15

MIL-PRF-19500/420H

* TABLE I. Group A inspection.

Inspection 1/

Subgroup 1

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

2071

Min

Max

Visual and mechanical

inspection

Subgroup 2

Thermal impedance

Forward voltage

See 4.3.1 and 4.4.1.

Z

θJX

3101

4011

1.5

°C/W

I_F= 9.0 A(pk); duty cycle ≤ 2

percent (pulsed see 4.5.1);

t_p≤ 8.3 ms

V_F1

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

0.6

1.2

1.3

V(pk)

I_F= 1.5 A dc

DC method

V_F1

I_R1

Forward voltage

4011

4016

0.5

1.0

V dc

Reverse current

leakage

µA dc

V_R= 200 V dc

V_R= 400 V dc

V_R= 600 V dc

V_R= 800 V dc

V_R= 1,000 V dc

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

1.0

V_BR1

Breakdown voltage

(diodes)

4021

I_R= 50 µA dc

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

200

400

600

800

1,000

V dc

See footnote at end of table.

16

MIL-PRF-19500/420H

TABLE I. Group A inspection - Continued.

Inspection 1/

Subgroup 3

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

T_A= +100°C

High temperature

operation:

DC method

I_R2

Reverse current

leakage

Reverse current

leakage

4016

µA dc

V_R= 200 V dc

V_R= 400 V dc

V_R= 600 V dc

V_R= 800 V dc

V_R= 1,000 V dc

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

75

V_F2

Forward voltage

4011

I_F= 9.0 A(pk); duty cycle ≤ 2

percent (pulsed see 4.5.1); t_p≤

8.3 ms

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

1.2

1.3

V(pk)

T_A= -55°C

Low temperature

operation:

Forward voltage

4011

1.5

1.2

V(pk)

V dc

I_F= 9.0 A(pk); duty cycle ≤ 2

percent (pulsed); t_p≤ 8.3 ms

V_F3

I_F= 1.5 A dc

V_F4

Forward voltage

4011

4021

0.5

V_BR2

Breakdown voltage

(diodes)

I_R= 50 µA dc

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

200

400

600

800

1,000

V dc

Subgroup 4

Condition B1

t_rr

Reverse recovery time

Scope display evaluation

See footnote at end of table.

4031

4023

2.0

µs

See 4.5.3, n = 116, c = 0

17

MIL-PRF-19500/420H

TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Subgroups 5

Symbol

Limits

Unit

Method

Conditions

Min

Max

Not applicable

Subgroup 6

Forward surge

I

= rated (see col. 6 of 1.3);

FSM

4066

10 surges of 8.3 ms each at 1

minute intervals, superimposed

on I = 0, V

= 0

O

RSM

Electrical measurement

Subgroup 7

See table I, subgroup 2.

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

18

MIL-PRF-19500/420H

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

1056

Conditions

Subgroup 1

Thermal shock

45 devices

c = 0

20 cycles, condition D except low temperature shall be

achieved using liquid nitrogen (-195°C). Perform a visual for

cracked glass.

Temperature cycling

1051

500 cycles, condition C, -65°C to +175°C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

Steady state dc blocking life

Electrical measurements

* Subgroup 3

22 devices

c = 0

1,000 hours, condition A; V_R= V_RWM

1048

2101

See table I, subgroup 2 and table III herein.

3 devices

c = 0

Cross section and scribe and break.

Separate samples shall be used for each test.

DPA (Decap analysis)

* Subgroup 4

Each supplier shall submit their (typical) maximum design

thermal impedance curves. In addition, optional test

conditions and Z_θ_JXlimit shall be provided to the qualifying

activity in the qualification report.

Thermal impedance

curves

See figures 10, 11, and 12; ∆T_J≤ 120°C; L = .375 inch;

T_L= 55°C; I_O= 5 A dc.

Junction temperature

rise (see 4.5.2.1)

Subgroup 5

22 devices

c = 0

Pressure (see 1.3); t = 1 min. DC method;

Barometric pressure,

reduced (altitude

operation)

1001

1020

V_R= V_RWM(see 1.3); I_R1= 1.0 µA dc maximum

Electrical measurement

* Subgroup 6

See table I, subgroup 2 and table III herein.

n = 3, c = 0

ESD

See footnotes at end of table.

19

MIL-PRF-19500/420H

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

* Subgroup 8

Peak reverse power

See 4.5.5 herein. Peak reverse power (P_RM)= shall be

characterized by the supplier and this data shall be available

to the Government. Test shall be performed on each sublot.

Electrical measurement

During the P_RMtest, the voltage (V_BR) shall be monitored to

verify it has not collapsed. Any collapse in V_BRduring or

after the P_RMtest or rise in leakage current (I_R) after the test

that exceeds I_R1in table I shall be considered a failure to that

level of applied P_RM. Progressively higher levels of P_RMshall

be applied until failure occurs on all devices within the

chosen sample size to characterize each sublot.

Subgroup 9 1/

n = 45

Resistance to glass

cracking

1057

4066

Step stress to destruction by increasing cycles or up to a

maximum of 25 cycles.

* Subgroup 10

Forward surge

22 devices

c = 0

I_FSM= 80 A(pk); 10 surges of 8.3 ms each at 1 minute

intervals, superimposed on I_O= 2 A dc; V_RWM= rated V_RWM

(see col. 3 of 1.3). T_A= +100°C.

Electrical measurement

See table I, subgroup 2 and table III herein.

1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant

sample size is required.

20

MIL-PRF-19500/420H

* TABLE III. Delta requirements. 1/ 2/ 3/ 4/ 5/

Step

1.

Inspection

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

4016

Min

Max

∆I_R14/

Reverse current

leaking change

DC method

±100 percent of

initial value or

±250 nA dc,

whichever is

greater.

I_F= 1.5 A dc;

pulsed (see 4.5.1)

∆V_F14/

2.

Forward voltage

change

4011

±50 mV dc

maximum

change from

1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, step 2.

b. Subgroup 4, see table III herein, step 2.

c. Subgroup 5, see table III herein, steps 1 and 2.

2/ The electrical measurements for table VIb (JAN, , JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, step 1.

b. Subgroup 6, see table III herein, step 1.

3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table III herein, step 1 (JANS).

b. Subgroup 6, see table III herein, step 1 and 2 (JANS), step 1 (JAN, JANTX, JANTXV and).

4/ Devices which exceed the table I limits for this test shall not be accepted.

5/ The electrical measurements for table IX of MIL-PRF-19500 are as follows:

a. Subgroup 2 and 10, see table III herein, step 1 and 2.

21

MIL-PRF-19500/420H

NOTES: *

L = 13T H22 on 1 inch (25.4 mm) diameter form (air core).

C ~ 1 to 10 µfd to give 20 µs pulse width.

V - Adjustable to 200 volts for power desired in DUT.

D1 - 3 kV; 600 Ma (1N3647 or equivalent).

D2, D3 - 600 V; 3A (1N5552 or equivalent).

* Values not stated are determined at the time of test.

FIGURE 9. Typical peak reverse power measurement circuit and waveforms.

22

MIL-PRF-19500/420H

NOTE: Blocking diode shall have a forward current rating ≥ 6 A dc.

FIGURE 10. Junction temperature rise test circuit.

FIGURE 11. Junction temperature test oscillogram (typical).

23

MIL-PRF-19500/420H

FIGURE 12. Expanded oscillogram of V_F.

24

MIL-PRF-19500/420H

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

*

order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,

these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging

requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or

Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the

managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by

contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

*

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or

not such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail

vqe.chief@dla.mil.

6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and

users' Part or Identifying Number (PIN). This information in no way implies that the manufacturers' PIN's

are suitable as a substitute for the military PIN.

6.5 Applications data. See figure 13 for maximum power in watts as a function of lead temperature at a

distance "L" from the diode body. Device current capability with lead-dissipators or body forced-air-cooling,

may be determined from figure 14, which shows maximum average rectified current versus lead

temperature as a function of the distance L from the diode body at which lead temperature is measured.

25

MIL-PRF-19500/420H

Maximum lead temperature in °C (T_L) at point "L" from body (for maximum operating junction temperature

of +175°C with equal two-lead conditions).

L

R_θJL

Inches

.000

.250

.375

.500

.750

mm

0.00

°C/W

11

6.35

16.5

22

9.53

12.70

19.05

26

35.5

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to φx

symbology.

* FIGURE 13. Maximum power in watts versus lead temperature.

26

MIL-PRF-19500/420H

NOTES

1. Dimensions are in inches.

2. Millimeters are given for general information only.

FIGURE 14. Maximum current vs lead temperature.

27

MIL-PRF-19500/420H

6.6 Suppliers of die. The qualified die suppliers with the applicable letter version (example JANHCA1N5550) will

be identified on the QML.

JANC ordering information

Manufacturer

14552

60211

13409

33178

1N5550

1N5551

1N5552

1N5553

1N5554

JANHCA1N5550

JANKCA1N5550

JANHCA1N5551

JANKCA1N5551

JANHCA1N5552

JANKCA1N5552

JANHCA1N5553

JANKCA1N5553

JANHCA1N5554

JANKCA1N5554

JANHCB1N5550 JANHCC1N5550 JANHCD1N5550 JANHCE1N5550

JANHCB1N5551 JANHCC1N5551 JANHCD1N5551 JANHCE1N5551

JANHCB1N5552 JANHCC1N5552 JANHCD1N5552 JANHCE1N5552

JANHCB1N5553 JANHCC1N5553 JANHCD1N5553 JANHCE1N5553

JANHCB1N5554 JANHCC1N5554 JANHCD1N5554 JANHCE1N5554

6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Air Force - 11

DLA - CC

Preparing activity:

DLA - CC

Review activities:

Army - AR, MI, SM

Navy - AS, MC

(Project 5961-2760)

Air Force - 19, 71, 84, 99

* NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at http:\\www.dodssp.daps.mil .

28


型号：	JANKCA1N5553
厂家：	ETC
描述：	This specification covers the performance requirements for silicon, general purpose, 本规范包括硅，通用的性能要求，
文件：	总28页 (文件大小：202K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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