JANKCA1N5711 [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, 0.033A, 70V V(RRM), Silicon, DIE-2;型号: | JANKCA1N5711 |
厂家: | Microsemi |
描述: | Rectifier Diode, Schottky, 1 Element, 0.033A, 70V V(RRM), Silicon, DIE-2 二极管 |
文件: | 总2页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/444
• 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODES
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Operating Current: 5711 types
2810,5712 & 6858 types :75mA dc@ T
:33mA dc@ T
L = +130°C, L = 3/8”
L = +110°C, L = 3/8”
:75mA dc@ T
L = +70°C, L = 3/8”
6857 TYPE
all types:
Derating:
Derate to 0 (zero)mA@+150°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
MAXIMUM
ESDS
CAPACITANCE @ CLASS
NUMBER
V
= 0 VOLTS
f = 1.0 MHZ
R
VBR @ 10
A
V
@ 1 mA
V
@ I
I
@ V
C
µ
F
F
F
R
R
T
VOLTS
20
VOLTS
MILLIAMPS
nA
100
200
150
150
150
200
VOLTS
PICO FARADS
DSB2810
1N5711,-1
DSB5712
1N5712-1
1N6857-1
1N6858-1
0.41
1.0@35
15
2.0
2.0
2.0
2.0
4.5
4.5
1
1
1
1
2
2
FIGURE 1
70
0.41
1.0@15
50
20
0.41
1.0@35
16
20
0.41
1.0@35
16
20
0.35
0.75@35
0.65@15
16
DESIGN DATA
70
0.36
50
CASE: Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
NOTE: Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
): 250
OJEC
°C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
°C/W maximum
): 40
OJX
NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
63
1N5711, 1N5712, 1N6857, 1N6858
DSB5712 and DSB2810
INCLUDING -1 VERSIONS
100
10
10,000
1000
100
1.0
.1
10
.01
1.0
0
.2
.4
.6
.8
1.0
1.2
0
5.0
10
15
20
25
30
V
– FORWARD VOLTAGE (V)
Figure 1.
V
– REVERSE VOLTAGE (V)
(PULSED)
F
R
Figure 2.
I-V Curve Showing Typical
DSB5712 and DSB2810
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
Typical Variation of Reverse
Current (I ) vs. Reverse Voltage
R
(V ) at Various Temperatures.
R
100,000
10,000
1000
1
50
1000
10
5
100
10
1
1
.5
.1
10
.05
.01
1
0
.2
.4
.6
.8
1.0
1.2
0
10
20
30
40
50
60
.1
1.0
10
100
V
– FORWARD VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
(PULSED)
F
I
– FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
F
Figure 3.
Figure 4.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
1N5711 Typical
Variation of Reverse Current (I
vs. Reverse Voltage (V ) at
Various Temperatures.
)
R
Resistance (R ) vs. Forward
D
R
Current (I ).
F
64
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