JANTX2N6308 [ETC]
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 8A I(C) | TO-3 ; 晶体管| BJT | NPN | 350V V（ BR ） CEO | 8A I（C ） | TO- 3\n
| 型号： | JANTX2N6308 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 8A I(C) | TO-3
|
| 文件： | 总12页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 27 July 1998.
INCH-POUND
MIL-PRF-19500/498C
27 March 1998
SUPERSEDING
MIL-S-19500/498B
5 October 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE 2N6306, 2N6308, JAN, JANTX AND JANTXV
This Specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See 3.3. (Similar to TO-3)
1.3 Maximum ratings.
P
P
V
V
V
I
I
T
and T
C
T
T
CBO
CEO
EBO
B
C
J
STG
T
= +25 C 1/
W
T
= +100 C 1/
W
C
C
V dc
V dc
V dc
A dc
A dc
2N6306
2N6308
125
125
62.5
62.5
500
700
250
350
8.0
8.0
4.0
4.0
8.0
8.0
-65 to +200
-65 to +200
1/ Between T = +25 C and T = +175 C , linear derating factor (average) = .833 W/ C .
C
C
1.4 Primary electrical characteristics.
h
FE2
h
FE3
V
1/
V
1
BE(sat)
CE(sat)
V
= 5 V dc
V
= 5 V dc
I
C
= 8 A dc
I
C
= 8 A dc
I
= 3 A dc
CE
= 3 A dc
CE
= 8 A dc
C
I
I
I
B
= 2/
I
B
= 2
I
= 0.6 A dc
C
C
B
Min
Max
Min
Max
Min
Max
Min
V dc
Max
V dc
Min
V dc
Max
V dc
2N6306
2N6308
15
12
75
60
4
3
2.3
2.5
5
5
0.8
1.5
C
Switching
h
fe
obo
V
I
= 10 V dc
V
= 10 V dc
t
on
t
off
CE
= 0.3 A dc
CB
I
= 0
C
E
f = 1 MHz
100 < f < 1 MHz
pF
s
s
Min
5
Max
250
30
0.6
3.0
1/ Pulsed (see 4.5.1).
2/ 2N6306 (I ) = 2.0 A dc; 2N6308 (I ) = 2.67 A dc.
B
B
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/498C
Dimensions
Millimeters
Ltr
Inches
Max
Notes
3
Min
Min
Max
22.22
11.43
13.34
4.78
CD
CH
HR
HR1
HT
L1
LD
LL
MHD
MHS
PS
PS1
S
.875
.450
.525
.188
.135
.050
.043
.500
.165
1.197
.440
.225
.675
.250
.495
.131
.060
.635
12.57
3.33
1.52
3.43
1.27
1.09
12.70
4.19
30.40
11.18
5.72
5, 9
5, 9
5
.038
.312
.151
1.177
.420
.205
.655
0.97
7.92
3.84
29.90
10.67
5.21
7
4
4, 5
4
16.64
17.14
Notes:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Body contour is optional within zone defined by CD
4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gauge is not used ,
measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.
10. In accordance with ANSI Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Physical dimensions (similar to T0-3).
2
MIL-PRF-19500/498C
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
MILITARY
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of the specification and standard required by contractors in connection with specific acquisition functions should be obtained
from the contracting activity or as directed by the contracting activity.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for
associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this
specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and figure 1 (similar to T0-3) herein.
3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in paragraph 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in paragraphs 4.4.2 and 4.4.3.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
4.VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
3
MIL-PRF-19500/498C
4.3 Screening. Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified herein. The following
measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
Measurements
of MIL-PRF-19500)
JANTX, JANTXV levels
1/
11
Thermal response (see 4.3.2)
I and h
CEX1
See 4.3.1
Subgroup 2 of table I herein;
FE3
12
13
I
100% of initial value or 500 nA dc, whichever is greater.
CEX1
h
FE3
25% of initial value.
1/ This test shall be performed any time before screen 10.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
T
A
= room ambient as defined in the general requirements of 4.5 of MIL-STD-750; V
10 V dc; T
J
CB
= +162.5 C 12.5 C. No heat sink or forced air cooling on the devices shall be permitted.
4.3.2 Thermal response
MIL-STD-750, method 3131. The
measurement and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response
curve shall be plotted. The chosen shall be considered final after the manufacturer has had the opportunity to test five consecutive
V
measurements. The
V
measurements shall be performed in accordance with
BE
BE
conditions (I and V ) and maximum limit shall be derived by each vendor. The chosen
V
BE
H
H
V
BE
V
BE
lots. One hundred percent Safe Operation Area (SOA) testing may be performed in lieu of thermal response testing herein, provided that
the appropriate conditions of temperature, time, current, and voltage to achieve die attach integrity are submitted to the qualifying activity.
The following parameter measurements shall apply:
a.
b.
c.
d.
e.
f.
I
measurement - - - - - - - - - - - - - - - - 10 mA.
M
V
measurement voltage - - - - - - - - - - - 20 V (same as V ).
H
CE
I
H
collector heating current - - - - - - - - - 4 A (minimum).
V
collector-emitter heating voltage - - - - - 20 V (minimum).
H
t
t
t
heating time - - - - - - - - - - - - - - - 100 ms.
H
measurement delay time - - - - - - - - - - 50 s to 80 s.
sample window time - - - - - - - - - - - - 10 s (maximum).
MD
SW
g.
4.3.3 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750.
The following details shall apply:
a.
b.
c.
d.
e.
f.
I
measurement - - - - - - - - - - - - - - - - 10 mA.
M
V
measurement voltage - - - - - - - - - - - 15 V.
CE
I
H
collector heating current - - - - - - - - - 8 A.
V
collector-emitter heating voltage - - - - - 15 V.
H
t
t
t
heating time - - - - - - - - - - - - - - - Stead-state (see MIL-STD-750, method 2131 for definition).
H
measurement delay time - - - - - - - - - - 20 s (maximum).
sample window time - - - - - - - - - - - - 10 s (maximum).
MD
SW
g.
4
MIL-PRF-19500/498C
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I,
group A, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method
1037
Condition
10 V dc;
3
V
T
between cycles +100 C; t = t > 1 minute f 2000 cycles.
J on off
CB
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table V of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein.
Subgroup Method
1037
Condition
6
V
CB
10 V dc;
T between cycles +100 C; t = t 1 minute for 6000 cycles. No heat sink
off
J on
or forced-air cooling on device shall be permitted.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see
2.2.1).
b. Lead finish (see 3.3.1).
c. Type designation and product assurance level.
d. Packaging requirements (see 5.1).
6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed
by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
5
MIL-PRF-19500/498C
TABLE I. Group A inspection.
MIL-STD-750
Limit
Inspection 1/
Subgroup 1
Method
2071
Conditions
Symbol
Min
Max
Unit
Visual and mechanical
examination
Subgroup 2
Collector to base
breakdown voltage
3011
3041
Bias condition D, I = 100 mA dc;
C
Pulsed (see 4.5.1)
V
(BR)CEO
2N6306
2N6308
250
350
V dc
V dc
Collector to emitter
cutoff current
Bias condition D;
I
50
A dc
CEO
2N6306
2N6308
V
V
= 250 V dc
= 350 V dc
CE
CE
Emitter-base
cutoff current
3061
3041
Bias condition D V
EB
= 8 V dc
I
5.0
A dc
EBO
Collector to emitter cutoff
current
Bias condition A; V
BE
= 1.5 V dc
I
CEX1
A dc
A dc
2N6306
2N6308
5.0
5.0
V
V
= 500 V dc
= 700 V dc
CE
CE
Base emitter voltage
3066
3066
Test condition A; I = 8.0 A dc;
V
C
BE(sat)
BE(on)2
Pulsed (see 4.5.1)
2N6306
2N6308
2.3
2.5
V dc
V dc
I
I
= 2.0 A dc
B
= 2.67 A dc
B
Base emitter voltage
Test condition B; I = 3.0 A dc;
V
C
V
= 5.0 V dc; Pulsed (see 4.5.1)
CE
2N6306
2N6308
1.3
1.5
V dc
V dc
Collector to emitter saturated
voltage
3071
3071
3076
I
= 8.0 A dc; Pulsed (see 4.5.1)
V
V
5.0
V dc
C
CE(sat)1
CE(sat)2
I
B
I
B
= 2.0 A dc
2N6306
2N6308
Collector to emitter saturated
voltage
= 2.67 A dc
I
C
= 3.0 A dc; I = 0.6 A dc;
B
Pulsed (see 4.5.1)
2N6306
2N6308
Forward-current transfer ratio
0.8
1.5
V dc
V dc
V
= 5 V dc; I = 3.0 A dc;
h
CE
C
FE1
FE2
Pulsed (see 4.5.1)
2N6306
2N6308
15
12
75
60
Forward-current transfer ratio
3076
V
= 5 V dc; I = 8.0 A dc;
C
h
CE
Pulsed (see 4.5.1)
2N6306
2N6308
4
3
See footnote at end of table.
6
MIL-PRF-19500/498C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/
Subgroup 2 - Continued.
Method
3076
Conditions
Symbol
Min
Max
Unit
Forward-current transfer ratio
2N6306
2N6308
V
= 5 V dc I = 0.5 A dc; Pulsed
h
FE3
CE
(see 4.5.1)
C
15
12
Subgroup 3
High-temperature operation
T
= +150 C
A
Collector to emitter cutoff
current
2N6306
3041
3076
I
500
A dc
CEX2
Bias condition A; V
BE
= 1.5 V dc
V
V
T
= 450 V dc
CE
CE
2N6308
= 650 V dc
Low-temperature operation
= -55 C
A
Forward-current transfer ratio
h
FE4
V
= 5.0 V dc I = 3.0 A dc; Pulsed
C
CE
(see 4.5.1)
2N6306
2N6308
6
5
Subgroup 4
Pulse response: transfer ratio
3251
Test condition A except test circuit and
pulse requirements in accordance with
figure 1.
Turn-on time
Turn-off time
V
= 125 V dc; I = 3.0 A dc;
t
0.6
3.0
s
s
CC
= 0.6 A dc
C
on
I
B
V
= 125 V dc; I = 3.0 A dc;
t
CC
C
off
I
= 0.6 A dc I = 1.5 A dc
B1
B2
Magnitude of common emitter
small-signal short-circuit
forward- current transfer ratio
3306
V
= 10 V dc; I = 0.3 A dc;
5
5
30
h
CE
C
fe
f = 1 MHz
Open capacitance(open
circuit)
3236
3206
250
pF
V
= 10 V dc; I = 0;
E
C
CB
100 kHz < f < 1.0 MHz
obo
Small-signal short- circuit
forward- current transfer ratio
V
CE
kHz
= 4.0 V dc; I = 0.5 A dc; f = 1.0
h
fe
C
Subgroup 5
Safe operating area(dc
operation)
3051
T
= +25 C t = 1 s; 1 cycle;
C
(See figures 2 and 3)
Test 1
(Both device types)
V
V
= 15.6 V dc; I = 8 A dc
C
CE
CE
Test 2
(Both device types)
= 37 V dc; I = 3.4 A dc
C
Test 3
2N6306
2N6308
V
V
= 200 V dc; I = 65 mA dc
C
CE
CE
= 300 V dc; I = 25 mA dc
C
table I, group A, subgroup 2 herein
Electrical measurements
Subgroups 6 and 7
Not applicable
For sampling plan see MIL-PRF 19500.
7
MIL-PRF-19500/498C
NOTES:
1. The rise time (t ) and fall time (t ) of the applied pulse shall be each < 2 ns; duty cycle < 1 percent;
generator source impedance
r
f
shall be 50 ; pulse width = 30 s.
2. Output sampling oscilloscope: Z > 20 k ; C
< 50 pF; rise time < 0.2 ns.
IN IN
FIGURE 2. Pulse response test circuit.
8
MIL-PRF-19500/498C
FIGURE 3. Maximum safe operating area graph (continuous dc).
9
MIL-PRF-19500/498C
FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
10
MIL-PRF-19500/498C
CONCLUDING MATERIAL
Custodians:
Air Force - 17
Preparing activity:
DLA-CC
(Project 5961-1782)
Review activities:
Air Force - 13, 19, 85, 99
11
MIL-PRF-19500/498C
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current
contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s)
or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/498C
2. DOCUMENT DATE
27 March 1998
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N6306, 2N6308, JAN,
JANTX AND JANTXV
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code) Commercial 7. DATE SUBMITTED
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAT
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403,
Columbus, OH 43216-5000
Falls Church, VA 22041-3466
Telephone (703) 756-2340 DSN 289-2340
Previous editions are obsolete
DD Form 1426, OCT 89
12
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