LDTBFW16A [ETC]
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 150MA I(C) | LID ; 晶体管| BJT | NPN | 25V V（ BR ） CEO | 150MA I（C ） | LID\n
| 型号： | LDTBFW16A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 150MA I(C) | LID
|
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT DATA
Micro International, Inc
PART NUMBER
LDTBFW16A and LDTBFW16AT
Micro-LID NPN Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW16A and LDTBFW16AT
Description:
The LDTBFW16A (untinned) and LDTBFW16AT (tinned) are NPN silicon 1.2
GHz wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFW16A and LDTBFW16AT meet the general specifications of the BFW16A
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved
for military, medical implant, sensor, and high reliability applications. The
LDTBFW16A and LDTBFW16AT can be provided with special feature options
such as additional temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter
Symbol
Vcbo
Vceo
Vebo
Ic
Rating
40 V
25 V
2 V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
150 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Storage Temperature
Operating Temperature
Tj
150°C
Tstg
Toper
-65°C to 150°C
-55°C to 125°C
1/3 December 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW16A and LDTBFW16AT
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3, 4
3
4
2
1
2
.040
1
.075
END VIEW
SIDE VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075¢¢ + .003¢¢
.040¢¢ + .003¢¢
.035¢¢ + .003¢¢
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015¢¢ x .010¢¢ typ
.015¢¢ x .010¢¢ typ
.015¢¢ x .012¢¢ typ
Marking on back of package : Blue Stripe over Collector, Blue Dot over Emitter
and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø
Ø
Ø
Ø
Ø
Ø
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°C
10 temperature cycles from –55°C to 125°C
100% electrical test of dc characteristics at 25°C
Final visual inspection
________________________________________________________________
2/3 December 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW16A and LDTBFW16AT
Electrical Characteristics (25°C Ambient)
Parameter
Symbol
Min Typ Max Units
Collector-Base Breakdown
Ic = 100 uA, Ie = 0
BVcbo
BVceo
BVebo
Icbo
40
25
2
--
--
--
--
--
V
V
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
--
Emitter-Base Breakdown
Ic = 0, Ie = 100 uA
--
V
Collector-Base Cutoff Current
Vcb = 20 V
--
50
nA
DC Forward Current Gain*
Ic = 50 mA, Vce = 5 V
Ic = 150 mA, Vce = 5 V
Hfe
25
25
--
--
--
--
Collector-Emitter Saturation
Ic = 100 mA, Ib = 10 mA Vce (sat)
--
--
--
--
1
4
V
Collector Capacitance
Cobo
pF
Vcb = 15 V, Ie = 0
f = 1 MHz
Gain Bandwidth Product
fT
--
--
1.2
--
--
GHz
dB
Ic = 150 mA, Vce = 15 V
f = 500 MHz
Noise Figure
NF
3.3
Ic = 50 mA, Vce = 10 V
f = 500 MHz
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
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