LDTBFW30T [ETC]
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | LID ; 晶体管| BJT | NPN | 10V V（ BR ） CEO | 50MA I（C ） | LID\n
| 型号： | LDTBFW30T |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | LID
|
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT DATA
Micro International, Inc
PART NUMBER
LDTBFW30 and LDTBFW30T
Micro-LID NPN Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW30 and LDTBFW30T
Description:
The LDTBFW30 (untinned) and LDTBFW30T (tinned) are NPN silicon 1.6 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFW30 and LDTBFW30T meet the general specifications of the BFW30
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved
for military, medical implant, sensor, and high reliability applications. The
LDTBFW30 and LDTBFW30T can be provided with special feature options such
as additional temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter
Symbol
Vcbo
Vceo
Vebo
Ic
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
20 V
10 V
2.5 V
50 mA
Total Dissipation
Pt
350 mW
150°C
Operating Junction Temperature
Storage Temperature
Operating Temperature
Tj
Tstg
Toper
-65°C to 150°C
-55°C to 125°C
1/3 December 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW30 and LDTBFW30T
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3, 4
3
4
2
1
2
.040
1
.075
END VIEW
SIDE VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075¢¢ + .003¢¢
.040¢¢ + .003¢¢
.035¢¢ + .003¢¢
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015¢¢ x .010¢¢ typ
.015¢¢ x .010¢¢ typ
.015¢¢ x .012¢¢ typ
Marking on back of package : Gray Stripe over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø
Ø
Ø
Ø
Ø
Ø
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°C
10 temperature cycles from –55°C to 125°C
100% electrical test of dc characteristics at 25°C
Final visual inspection
________________________________________________________________
2/3 December 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFW30 and LDTBFW30T
Electrical Characteristics (25°C Ambient)
Parameter
Symbol
Min Typ Max Units
Collector-Base Breakdown
Ic = 100 uA, Ie = 0
BVcbo
BVceo
BVebo
Icbo
20
10
2.5
--
--
--
--
--
--
V
V
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
--
Emitter-Base Breakdown
Ic = 0, Ie = 100 uA
--
V
Collector-Base Cutoff Current
Vcb = 10 V
50
nA
DC Forward Current Gain*
Ic = 25 mA, Vce = 5 V
Ic = 50 mA, Vce = 5 V
Hfe
25
25
--
--
--
--
Collector Capacitance
Vcb = 5 V, Ie = 0
f = 1 MHz
Cobo
fT
--
--
--
--
1.5
pF
GHz
dB
Gain Bandwidth Product
Ic = 50 mA, Vce = 5 V
f = 500 MHz
1.6
--
--
Noise Figure
NF
5
Ic = 2 mA, Vce = 5 V
f = 500 MHz
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
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