MB39C602 [ETC]

高功率,高功率因数LED驱动IC; 高功率，高功率因数LED驱动IC


型号：	MB39C602
厂家：	ETC
描述：	高功率,高功率因数LED驱动IC 高功率，高功率因数LED驱动IC 驱动
文件：	总139页 (文件大小：7214K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MB39C602

高功率,高功率因数LED驱动IC

概要

MB39C602是带反激式拓扑结构的开关调节控制器。

根据LED负载，通过控制开启时间的方法调节LED电流。MB39C602适合LED照明应用。

特性

应用

·高功率因数(>0.9)

·灯泡&灯管

·效率高(>85%)且EMI低

·宽输入电压: 85VAC ~ 265VAC

·封装SOP-8

·筒灯&吸顶灯

·PWM调光LED照明

应用框图

LED灯泡

LED灯管

Transformer

Capacitor

PCB

AC line

LED

Coil

FET

LED

LED driver

Photo Coupler

Non isolated type

Isolated

MB39C602

无线 + 调光解决方案

LED Bulb + ZigBee

LED驱动板

框图

LED Light Bulb

constant current

control(350mA)

MB39C602

LED Driver

240VAC

dimming

LED

(5-9*1W)

MB95560+ZigBee

Module

Remote

Control

* MB95560 is 8bit MCU made in Fujitsu semiconductor.

规格&特性

效率

Efficiency[n]

fac=60Hz

MB39C602规格

fac=50Hz

100.0%

持续通电运行、非持续模式的单级PFC和变压器零

电流检测。控制开关频率

SW方法

SW FET

结温

95.0%

90.0%

外部

85.0%

80.0%

Tjmax = 125℃

n [ % ]

75.0%

70.0%

65.0%

60.0%

SW频率

保护

30kHz ~ 120kHz (最大值)

欠压锁定(UVLO)、过压保护(OVP)、过温保护(OTP)

SOP-8

180

190

200

210

220

VIN_AC [V]

230

240

250

260

270

封装

LED(10W)；9串/0.35A

功率因数

Power Factor[PF]

fac=60Hz

fac=50Hz

0.95

0.9

SOP-8

0.85

3.9mm×5.05mm×1.75mm

0.8

0.75

0.7

(Pin pitch 1.27mm）

180

190

200

210

220

VIN_AC [V]

LED(10W)；9串/0.35A

230

240

250

260

270

网络设计仿真服务

Start URL: http://edevice.fujitsu.com/pmic/en-easy/

Landing Page

Circuit diagram & Parts selection

Simulation waveform

BOM List & Buy a part

富士通半导体(上海)有限公司

上海市浦东新区芳甸路1155号浦东嘉里城办公楼30层

邮编: 201204

电话: (86 21) 6146 3688

传真: (86 21) 6146 3660, 6146 3680

网址: http://cn.fujitsu.com/fss

北京: (86 10) 5969 1600

深圳: (86 755) 2583 0028

成都: (86 28) 8515 0023

西安: (86 29) 8799 8600

大连: (86 411) 3999 0600

厦门: (86 592) 210 5900

青岛: (86 532) 6887 7001

武汉: 027-8760-8760

新加坡: (65) 6281 0770

香港: (852) 2736 3232

台湾: (886 2) 2719 2011

Demonstration Unit Manual

LED Control by

Smart Phone

MB39C602-EVBSK-04

(AC200V)

Rev 2.0

Jan. 2013

Fujitsu semiconductor limited confidential

1. Introduction

MB39C602-EVBSK-04 can control the on/off and dimming by

using Android Smart Phone. You can control the LED light by Bluetooth Chat

Appl which is free soft for Android Smart Phone.

LED load: 390mA / 9 pieces in series, Power: AC185V-240V

36V

390mA

AC Power

Supply

LED Driver

185V~240V

Smart Phone

Dimming、ON/OFF

Control

Fujitsu semiconductor limited Confidential

2. Demonstration

1) Connect LED light to AC power (AC185V-240V).

2) The LED is shined.

3) Turn on the power of smart phone.

4) Start the Bluetooth Chat for Android smart phone.

Bluetooth Chat

5) Push menu button, and select “Connect a device”.

“Connect a device”

Menu button

Fujitsu semiconductor limited Confidential

6) Select “ZEAL-C02 “ xx:xx:xx:xx:xx”, then the “Connected to ZEAL-C02”

message will appear.

“ZEAL-C02”

“Connected to

xx:xx:xx:xx:xx

ZEAL-C02”

message will

appear

7) Select character to number character by using below button.

The character is

changed to number

Character select

8) To change the brightness, please push 1 – 9 and 0 number. Then push

“Enter”.

Ex: Dimming 50%

Ex: Dimming 90%

1 - dimming 10%

2 - dimming 20%

9 - dimming 90%

0 - 100%

Fujitsu semiconductor limited Confidential

9) To turn on or off, please push “*” or “#” button. Then push “Enter”.

Ex: power off

Ex: power on

* - power off

# - power on

Fujitsu semiconductor limited Confidential

3. Specification

Ta = 25°C , fac=60Hz

ITEM

Voltage range (RMS)

Input current (RMS)

Output voltage

MIN

185

TYP

220

MAX

240

UNIT

VAC

VIN

IIN

VOUT

IOUT

Iripple

fsw

Output load current

Output current ripple

Switching frequency

Efficiency

390

120

mApp

kHz

Power Factor

0.90

Ta = 25°C , fac=50Hz

ITEM

Voltage range (RMS)

Input current (RMS)

Output voltage

MIN

185

TYP

220

MAX

240

UNIT

VAC

VIN

IIN

VOUT

IOUT

Iripple

fsw

Output load current

Output current ripple

Switching frequency

Efficiency

390

128

mApp

kHz

Power Factor

0.92

Fujitsu semiconductor limited Confidential

3-1 Output Ripple

3-2 Switching Waveform

Fig.3-1 Output Ripple

Fig.3-2 Switching Waveform

VIN=DC230V

VIN=AC230V_RMS, fac=60Hz

LED ; 9 pieces in series

3-3 Turn-On Waveform

3-4 Turn-Off Waveform

VBULK

VDD

ILED

Fig.3-3 Turn-On Waveform

Fig.3-4 Turn-Off Waveform

VIN=0V -> AC230V_RMS(60Hz)

VIN=AC230V_RMS(60Hz) -> 0V

LED ; 9 pieces in series

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4. Demonstration Unit Detail

The following block diagram is the solution image.

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4-1. Circuit Diagram

Fig.4-1 Circuit Diagram

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4-2. Circuit Parts List

№

COMPONENT

DESCRIPTION

IC RECT BRIDGE 0.5A 600V 4SOIC

CAP CER 15000PF 250V X7R 1206

CAP CER 10000PF 50V X7R 0603

CAP CER .1UF 25V X7R 10% 0603

CAP 100UF 25V ELECT RADIAL 2.5MM

CAP CER 2.2UF 100V X7R 1210

CAP 1000UF 50V ELECT HE RADIAL

CAP .022UF/630VDC METAL POLY

CAP CER 10000PF 50V X7R 0603

CAP CER 2.2NF X1/Y1 RADIAL

CAP CER 0.33UF 16V X7R 0603

CAP .022UF/305VAC X2 METAL POLYPRO

CAP CER 1UF 25V X7R 10% 0603

CAP CER 820PF 50V X7R 0603

CAP CER 22000PF 50V X7R 0603

CAP CER 22uF 25V

PART No.

MB6S

VENDOR

Fairchild

Number

BR1

GRM31BR72E153KW01L

GRM188R71H103KA01D

GRM188R71E104KA01D

EKMG250ELL101MF11D

GRM32ER72A225KA35

EKMG500ELL102MK25S

ECQE6223KF

muRata

C4, C16, C25, C31, C33

muRata

Nippon Chemi-con

muRata

C6, C7

Nippon Chemi-con

Panasonic

muRata

C10, C15, C17, C18, C19

GRM188R71H103KA01D

DE1E3KX222MA4BL01

C0603C334K4RACTU

B32921C3223M

10 C11

muRata

11 C13

Kemet

12 C21

Epcos

13 C22, C32, C34

14 C23

GRM188R71E105KA2D

GRM188R71H821JA1J

GRM188R71H223KA01D

C4532JB1E226M

muRata

15 C24

muRata

16 C26, C27, C28, C29, C30

17 D1

TDK

DIODE ULTRA FAST 800V 1A SMA

DIODE ULTRA FAST 200V SOT-23

DIODE ZENER 18V 225MW SOT-23

DIODE GPP FAST 1A 600V DO-41

SHUNT REGULATOR 5.0V SOT-23

Schottky DIODE 30V 200mW SOD-523

Fuse,axial, fast acting, 2.5 A, 250V, 0.160 x 0.400

inch

RS1K-13-F

Diodes

18 D3

MMBD1404

Fairchild

19 D4

BZX84C18LT1G

On Semi

20 D5

UF4005

Fairchild

21 D8

LM4040C50IDBZT

Texas Instruments

22 D9

BAT54XV2T1G

ON Semiconductor

23 F1

026302.5MXL

Littelfuse Inc

24 L1

IND COMMON MODE CHOKE 40MH

JUMPER (RES 0.0 OHM 1206)

750311650

RK73Z2B

Wurth

25 L2, R34

KOA

26 L3

IND 1.5uH 30%

SLF6045T-1R5N4R0-3PF

SPA07N60C3

TDK

27 Q1

MOSFET N-CH 650V 7.3A TO-220FP

Dual MOSFET N-CH

Infineon

28 Q2

uPA2755

Renesas Electronics

29 Q3, Q4

30 R1, R2, R31

31 R4

TRANSISTOR NPN GP 40V SOT23

RES 560K OHM 1/4W 1% 0805 SMD

RES 75.0K OHM 1/4W 1% 1210 SMD

Resistor, chip, 110KOhm, 1/8W, +/-1%, 0603

RES 33K OHM 1/10W 1% 0603 SMD

RES 39K OHM 1/10W 1% 0603 SMD

RES 620K OHM 1/10W 1% 0603 SMD

RES 100K OHM 1/10W 1% 0603 SMD

RES 5.1 OHM 1/10W 1% 0603 SMD

RES 3 OHM 1/8W 1% 0805 SMD

MMBT3904-TP

Micro Commercial

RK73H2ATTD5603F

RK73H2ETTD7502F

RK73H1JTTD1103F

RK73H1JTTD3302F

RK73H1JTTD3902F

RK73H1JTTD6203F

RK73H1JTTD1003F

RK73H1JTTD5R10F

RK73H2ATTD3R00F

KOA

32 R11

33 R12

34 R13

35 R14

36 R15

37 R16

38 R17

R18, R41, R42, R43, R44,

R47, R48

RES 10.0K OHM 1/10W 1% 0603 SMD

RK73H1JTTD1002F

KOA

40 R19

41 R23

42 R24, R35

43 R33

44 R26

45 R29

46 R30

47 R32

48 R39, R50

49 R36

50 R37, R45, R46

51 R38

52 R40

53 R49

54 T1

RES .33 OHM 1/4W 1% 1206 SMD

RES 20K OHM 1/10W 1% 0603 SMD

RES 3K OHM 1/10W 1% 0603 SMD

RES 1.00M OHM 1/10W 1% 0603 SMD

RES 2.00K OHM 1/10W 1% 0603 SMD

RES 12K OHM 1/8W 1% 0805 SMD

RES 620K OHM 1/10W 1% 0603 SMD

RES 18K OHM 1/10W 1% 0603 SMD

RES 56K OHM 1/10W 1% 0603 SMD

RES 47K OHM 1/10W 1% 0603 SMD

RES 22K OHM 1/10W 1% 0603 SMD

RES 82K OHM 1/10W 1% 0603 SMD

RES 15K OHM 1/10W 1% 0603 SMD

RES 100K OHM 1/10W 1% 0603 SMD

TRANSFORMER FLYBACK EE20/10/6

IC PWM CTRLR CASCODE 8-SOIC

OPTO ISOLATOR TRANSISTOR OUTPUT

IC OPAMP GP R-R 1MHZ SGL SOT23-5

DCDC Converter

ERJ-8RQFR33V

RK73H1JTTD2002F

RK73H1JTTD3001F

RK73H1JTTD1004F

RK73H1JTTD2001F

RK73H1JTTD1202F

RK73H1JTTD6203F

RK73H1JTTD1802F

RK73H1JTTD5602F

RK73H1JTTD4702F

RK73H1JTTD2202F

RK73H1JTTD8202F

RK73H1JTTD1502F

RK73H1JTTD1003F

750811146

Panasonic

KOA

Wurth

55 U1

MB39C602

Fujitsu

CEL

56 U2

PS2561L-1-A

57 U5

LMV321IDBVR

Texas Instruments

Fujitsu

Panasonic

Fujitsu Component

58 U6

MB39A135

59 U7

New8FX Micorcontroller

MB95F560

60 VR1

SUR ABSORBER 7MM 430V 1250A ZNR

ERZ-V07D431

61 BT1

Bluetooth Module

MBH7BTZ42

Fig.4-2 Parts List

Fujitsu semiconductor limited Confidential

5. Microcontroller Software Reference

Caution:

This software is sample source code. It can’t promise for your products.

This is a project template for the MB95560 Series. It includes some basic settings for

e.g. Linker, C-Compiler which must be checked and modified in detail, corresponding

to the user application.

#include "mb95560.h"

unsigned char dimmer_status;

#define TX_BYTE_NUM

#define RX_BYTE_NUM

// UART TX Buffer

// UART Rx Buffer

#define PWM_OFF PDR6_P64=0

#define PWM_ON PDR6_P64=1

#define LED_ON PDR6_P62=0

#define LED_OFF PDR6_P62=1

// PWM Low I/O setting

// PWM High I/O setting

// LED ON I/O setting

// LED OFF I/O setting

unsigned char tx_data[TX_BYTE_NUM]={“slave 1 0¥r¥n"};

unsigned char tx_num;

// Startup data

// tx number

unsigned char rx_num;

// rx number

unsigned char on_data[RX_BYTE_NUM]={"#"};

unsigned char off_data[RX_BYTE_NUM]={"*"};

unsigned char dimmer0[RX_BYTE_NUM]={"0"};

unsigned char dimmer1[RX_BYTE_NUM]={"1"};

unsigned char dimmer2[RX_BYTE_NUM]={"2"};

unsigned char dimmer3[RX_BYTE_NUM]={"3"};

unsigned char dimmer4[RX_BYTE_NUM]={"4"};

unsigned char dimmer5[RX_BYTE_NUM]={"5"};

unsigned char dimmer6[RX_BYTE_NUM]={"6"};

unsigned char dimmer7[RX_BYTE_NUM]={"7"};

unsigned char dimmer8[RX_BYTE_NUM]={"8"};

unsigned char dimmer9[RX_BYTE_NUM]={"9"};

// on data

// off data

// dimmer 100%

// dimmer 10%

// dimmer 20%

// dimmer 30%

// dimmer 40%

// dimmer 50%

// dimmer 60%

// dimmer 70%

// dimmer 80%

// dimmer 90%

static void wait_1ms() {int i; for(i=0;i<36;i++);}

static void wait_2ms() {int i; for(i=0;i<73;i++);}

static void wait_3ms() {int i; for(i=0;i<108;i++);}

static void wait_4ms() {int i; for(i=0;i<144;i++);}

static void wait_5ms() {int i; for(i=0;i<180;i++);}

static void wait_6ms() {int i; for(i=0;i<216;i++);}

static void wait_7ms() {int i; for(i=0;i<252;i++);}

static void wait_8ms() {int i; for(i=0;i<288;i++);}

static void wait_9ms() {int i; for(i=0;i<324;i++);}

// wait 1ms

// wait 2ms

// wait 3ms

// wait 4ms

// wait 5ms

// wait 6ms

// wait 7ms

// wait 8ms

// wait 9ms

Description:

In this example, MCU works in asynchronous mode. After reset, MCU will send

“slave 1 0“ for the initial data of Bluetooth module to RS232 transceiver.

Then MCU feedback any bytes it received.

Fujitsu semiconductor limited Confidential

The following source code is MCU initialization function.

void MCU_initialization()

{

__DI();

/*system clock*/

SYCC=0x00;

//MCLK = source clock = 8Mhz (Main CR)

/*IO port*/

AIDRL=0xFF;

PDR6_P64=1;

DDR6_P64=1;

//PWM I/O initialize

//Enable output

PDR6_P62=0;

DDR6_P62=1;

//LED ON/OFF I/O initialize

//Enable output

/*LIN UART configuration*/

SMR=0x05;

//Asynchronous mode, enable SOT output

//disable interrupts

SSR=0x00;

BGR1 = 0x03;

// Reloadvalue = 0d832 = 0x340 (8MHz, 9600Baud)

// Reloadvalue = 0x340 = 0x03<<8 + 0x40 (8MHz,

9600Baud)

BGR0 = 0x40;

SCR=0x15;

//No parity, 1 stop bit, 8bit, enable transmit

WDTC=0x35;

//Clear watch dog timer

InitIrqLevels();

__EI();

// initialize Interrupt level register and IRQ vector table

}

Description:

- System clock is 8MHz internal clock.

- PWM I/O, LED ON/OFF I/O initialize.

- UART I/O initialize.

Asynchronous mode, 9600Baud, No parity, 1 stop bit, 8bit enable transmit

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The following source code is main function for dimming and on/off.

void main()

{

MCU_initialization();

rx_num=TX_BYTE_NUM;

SSR_TIE=1;

//MCU initialize function

//Transmit Bluetooth initial massage

dimmer_status=0;

//LED dimmer status initial

while(1)

{

WDTC=0x35;

//Clear watch dog timer

if(dimmer_status==0){

}else if(dimmer_status==1){

}else if(dimmer_status==2){

PWM_OFF;

PWM_ON;

wait_2ms(); PWM_ON;

wait_8ms(); PWM_OFF;

wait_3ms(); PWM_ON;

wait_7ms(); PWM_OFF;

wait_4ms(); PWM_ON;

wait_6ms(); PWM_OFF;

wait_5ms(); PWM_ON;

wait_5ms(); PWM_OFF;

wait_6ms(); PWM_ON;

wait_4ms(); PWM_OFF;

wait_7ms(); PWM_ON;

wait_3ms(); PWM_OFF;

wait_8ms(); PWM_ON;

wait_2ms(); PWM_OFF;

wait_9ms(); PWM_ON;

wait_1ms(); PWM_OFF;

PWM_OFF;

}else if(dimmer_status==3){

}else if(dimmer_status==4){

}else if(dimmer_status==5){

}else if(dimmer_status==6){

}else if(dimmer_status==7){

}else if(dimmer_status==8){

}else if(dimmer_status==9){

}else{

}

Description:

- MCU initialize

- Transmit Bluetooth initial message

- Clear watch dog timer

- PWM dimming

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The following source code is RS232 interrupt function.

__interrupt void lin_uart_tx(void)

{

if(SSR_TDRE){

if(tx_num>=rx_num) {

tx_num=0; rx_num=0;

SCR_RXE=1; SSR_TIE=0; SSR_RIE=1;

}else{

//set register

RDR_TDR=tx_data[tx_num]; tx_num++;

}

__interrupt void lin_uart_rx(void)

{

SCR_CRE=1;

//clear error flag

if(SSR_RDRF){ tx_data[rx_num]=0; rx_num++;

if(rx_num>=RX_BYTE_NUM){

SCR_TXE=1; SSR_TIE=1; SSR_RIE=0;

}

//set register

if(RDR_TDR==on_data[0]){

LED_ON;

//set dimmer status

}else if(RDR_TDR==off_data[0]){

LED_OFF;

}else if(RDR_TDR==dimmer0[0]){

LED_ON; dimmer_status=0;

}else if(RDR_TDR==dimmer1[0]){

LED_ON; dimmer_status=1;

}else if(RDR_TDR==dimmer2[0]){

LED_ON; dimmer_status=2;

}else if(RDR_TDR==dimmer3[0]){

LED_ON; dimmer_status=3;

}else if(RDR_TDR==dimmer4[0]){

LED_ON; dimmer_status=4;

}else if(RDR_TDR==dimmer5[0]){

LED_ON; dimmer_status=5;

}else if(RDR_TDR==dimmer6[0]){

LED_ON; dimmer_status=6;

}else if(RDR_TDR==dimmer7[0]){

LED_ON; dimmer_status=7;

}else if(RDR_TDR==dimmer8[0]){

LED_ON; dimmer_status=8;

}else if(RDR_TDR==dimmer9[0]){

LED_ON; dimmer_status=9;

}

Description:

- RS232 register setting

- LED dimming status setting

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6. Android Appl Reference

Caution:

We can’t support about these information. If you need more information for Android

Appl, you have to check it yourself on http://developer.android.com/index.html.

6-1. Setup development tools

STEP.1 Android SDK install

STEP.2 JDK install

STEP.3 Eclipse install

[STEP.1] Android SDK install

Please access the following URL.

Android SDK

http://developer.android.com/intl/ja/sdk/index.html

Please install it according to contents.

[STEP.2] JDK install

Please access the following URL.

ORACLE「Java SE DOWNLOAD」

http://www.oracle.com/technetwork/java/javase/downloads/index.html

Please install it according to contents.

[STEP.3] Eclipse install

Please access the following URL.

Eclipse

http://eclipse.org/

Please install it according to contents.

Fujitsu semiconductor limited Confidential

6-2. Compile Bluetooth Chat Appl

1. Start “Eclipse”.

2. Select [File(F)] menu -> [New(N) -- [Project(P)].

3. Select “Android Sample Project”.

4. Select your “Android Target version”.

5. Select “BluetoothChat”.

6. Execute “BluetoothChat” Project.

7. If Android GUI is automatically appeared on your PC, it is completed.

8. Please move the “BluetoothChat.apk” on ¥¥android¥BluetoothChat¥bin folder to

your SmartPhone.

9. Please install “BluetoothChat.apk” on your SmartPhone.

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Fujitsu Semiconductor Design (Chengdu) Co. Ltd.

User Manual

ANA-UM-500001-E-10

MB39C602 LED LIGHTING

SYSTEM

BULB 9W

ZIGBEE CONTROL

USER MANUAL

MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL

Revision History

Version Date

Updated by

Denny Deng

Allen Zhao

Approved by

Modifications

First Draft

1.0.0

1.1.0

2012-8-17

2012-11-1

Second Draft

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely

for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU

SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When

you develop equipment incorporating the device based on such information, you must assume any responsibility arising

out of such use of the information.

FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as

license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of

FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of

any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR

assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would

result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use,

including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not

designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless

extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,

severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic

control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use

requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or

damages arising in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such

failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and

prevention of over-current levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the

regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

ANA-UM-500001-E-10 Page 2

MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL

1 Introduction

1.1 Purpose

This user manual describes how to use the demo, which is the LED bulb 9W with zigbee

control dimming. With zigbee wireless controling, we can adjust the brightness of the LED

bulb. Demo can support simultaneously or separately adjust the brightness of the two LED

bulbs. The AC input rang is from 85VAC to 265VAC. LED load: 300mA / 9 pieces in series.

1.2 Reference Documents

ANA-UM-500002-E-10-LED_Driver_Board-Bulb_9W_PWM-Dimming;

MB39C602 Datasheet

ANA-UM-500001-E-10 Page 3

MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL

2 Overview and Features

2.1 Overview

The LED Driver use MB39C602 as controller IC. And MB39C602 is a flyback type switching

regulator controller IC. The LED current is regulated by controlling the switching on-time or

controlling the switching frequency, depending on the LED load. It is most suitable for the general

lighting applications, for example residencial LED lighting.

The MB95560H is general-purpose, single-chip microcontrollers. In addition to a compact instruction

set, the microcontrollers of these series contain a variety of peripheral resources.

2.2 Features

MB39C602:

・High power factor in Single Conversion

・High Efficiency

・High Performance flyback converter.

・Worldwide AC input (85V-265V) and use Zigbee module as dimmer

・Low EMI switching topology

・Suitable for LED lighting application (3W-25W).

・Built-in under voltage lock out function

・Built-in over load protection function

・Built-in over voltage protection function

・Built-in over temperature protection function

MB95560H:

・F2MC-8FX CPU core

・Clock

・Timer

・LIN-UART

・External interrupt

・8/10-bit A/D converter

・Low power consumption (standby) modes

・I/O port

・On-chip debug

・Hardware/software watchdog timer

・Power-on reset

・Low-voltage detection reset circuit

・Clock supervisor counter

・Dual operation Flash memory

・Flash memory security function

ANA-UM-500001-E-10 Page 4

PWM(0V-5V) Input

zigbee receiver

zigbee remote

controller

FUJITSU SEMICONDUCTOR

DATA SHEET

DS405-00010-1v0-E

ASSP

High Power Factor LED Driver IC for

LED lighting

MB39C602

 DESCRIPTION

MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling

the switching on-time depending on the LED load.

It is most suitable for the general lighting applications, for example stocks of commercial and residential

light bulbs and so on.

 FEATURES

 High power factor in Single Conversion

 Helps to achieve high efficiency and low EMI by detecting auxiliary transformer zero current

 Switching frequency setting depend on the FC pin current : 30 kHz to 120 kHz

 Control of the current of Primary Winding without the external sense resistor

 Built-in under voltage lock out function

 Built-in output over voltage protection function

 Built-in over temperature protection function

 Input voltage range VDD

: 9V to 20V

 Input voltage range for LED lighting applications : AC110V_RMS, AC230V_RMS

 Package

: SOP-8 (3.9mm × 5.05mm × 1.75mm [Max])

 APPLICATIONS

 LED lighting

 PWM dimmable LED lighting etc.

Power Supply online Design Simulation

Easy DesignSim

This product supports the web-based design simulation tool.

It can easily select external components and can display useful information.

Please access from the following URL.

http://edevice.fujitsu.com/pmic/en-easy/?m=ds

2012.12

MB39C602

PIN ASSIGNMENT

(TOP VIEW)

ZCD

VDD

GND

DRN

VCG

OTC

(FPT-8P-M02)

PIN DESCRIPTIONS

Pin No.

Pin Name

I/O

Description

Switching frequency setting pin.

Transformer auxiliary winding zero current detecting pin.

Pin for controlling peak current of transformer primary winding.

On-time control pin.

ZCD

OTC

VCG

DRN

GND

VDD

External MOSFET gate bias pin.

External MOSFET source connection pin.

Ground pin.

Power supply pin.

DS405-00010-1v0-E

MB39C602

BLOCK DIAGRAM

CBULK

Rst

13V

V_VDD

Switch

Fault Latch

V_VCG

LDO

VCG

DRN

V_VCG

10V/6V

UVLO

14V

VDD

Drive

Shunt

CVCG

Enable

PWM

CVDD

10V/8V

I_FC

Freq. Modulator

1/t_SW

DBIAS

I_FC

Enable

PWM

Driver

V_GATE

Current

Sense

Zero Current

Detect

ZCD

20mV

Fault

GND

On-Time Modulation

Discharge

Fault Timing

and Control

Fault

Current

Sence

V_GATE

I_OTC

Fault Latch

Reset

R_CL

UVLO

Shutdown

and Restart

Thermal

Shutdown

OTC

MB39C602

DS405-00010-1v0-E

MB39C602

ABSOLUTE MAXIMUM RATINGS

Rating

Parameter

Symbol

Condition

Unit

Min

-0.3

Max

+25.0

Power supply voltage

V_VDD

V_DRN

V_VCG

V_ZCD

V_OTC

V_CL

VDD pin

DRN pin

VCG pin

ZCD pin

OTC pin

CL pin

-0.3

+16.0

+6.0

+2.0

Input voltage

V_FC

FC pin

I_VCG

I_OTC

I_CL

VCG pin

OTC pin

CL pin

-1

Input current

-1

I_FC

FC pin

I_DRN

DRN pin

800

Output current

DRN pin,

Pulsed 400ns, 2% duty cycle

I_DRN

-1.5

+6.0

Power dissipation

P_D

800*

+125

°C

Ta  +25°C

Storage temperature

T_STG

-55

*: The value when using two layers PCB.

Reference: θja (wind speed 0m/s): +125°C/W

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

DS405-00010-1v0-E

MB39C602

RECOMMENDED OPERATING CONDITIONS

Value

Unit

Typ Max

Parameter

Symbol

Condition

Min

VDD pin input voltage

VCG pin input voltage

VDD VDD pin

VCG pin (from low-impedance

source)

VCG

I_VCG

VCG pin (from high-impedance

source)

VCG pin input current

2000

100

µA

OTC pin resistance to GND

CL pin resistance to GND

R_OTC

R_CL

OTC pin

CL pin

kΩ

24.3

200.0 kΩ

ZCD pin resistance to

auxiliary winding

ZCD pin Transformer auxiliary

winding connection resistor

R_ZCD

C_VCG

C_BP

200

1.0

kΩ

µF

°C

VCG pin capacitance to

GND

VCG pin

Ceramic capacitance to set between

VDD and GND pin

VDD pin bypass capacitance

0.1

-40

Operating ambient

temperature

+25

+85

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device's electrical characteristics are warranted when the device

is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

on the data sheet. Users considering application outside the listed conditions are advised to contact

their representatives beforehand.

DS405-00010-1v0-E

MB39C602

ELECTRICAL CHARACTERISTICS

(Ta = +25°C, V_VDD= 12V)

No.

Value

Min Typ Max

Parameter

VCG voltage

Symbol

VCG _(OPERATING)

Condition

_VDD=14V,

Unit

(Operating)

_VCG=2.0mA

V_OTC=0V, I_VCG=26μA

VCG _(DISABLED)

VCG voltage (Disable) VCG _(DISABLED)

VCG voltage

ΔVCG

1.75 2.00 2.15

difference

VCG _(OPERATING)

V_VCG=VCG _(DISABLED)

100mV,

_OTC=0V

_OTC=0V,

VCG Shunt input

I_{VCG (SREG)}

μA

current

VCG Shunt Load

ΔVCG _(SREG)

Regulation

125 200

26μA<I_VCG≤5mA

VCG LDO regulation

VCG _(LREG)

VDD and VCG

SUPPLY

V_VDD=20V, I_VCG=-2mA

VDD-VCG, V_VDD=11V,

voltage

VCG LDO Dropout

VCG _{(LREG, DO)}

voltage

2.0

2.8

_VCG=-2mA

UVLO Turn-on

VDD _(ON)

9.7 10.2 10.7

7.55 8.00 8.50

threshold voltage

UVLO Turn-off

VDD _(OFF)

Ω

threshold voltage

UVLO hysteresis

VDD switch

ΔVDD _(UVLO)

VDD _(ON)- VDD _(OFF)

_VCG=12V, V_VDD=7V,

I_DRN=50mA

1.9

2.2

2.5

R_{DS, ON (VDD)}

6,8

10*

on-resistance

Fault Latch Reset

VDD voltage

Minimum switching

period

VDD _{(FAULT RESET)}

t_{SW (HF)}

5.6

6.0

6.4

I_FC=5μA

7.215 7.760 8.305 μs

31.5* 35.0* 38.5* μs

Maximum switching

period

t_{SW (LF)}

I_FC= 165μA

I_FC=5μA, I_CL=100μA

I_FC=5μA, I_CL=30μA

DRN peak current

I_{DRN (peak)}

MODULATION

Minimum peak current

for R_CLopen

I_{DRN (peak, absmin)}

t_{BLANK (ILIM)}

R_CL=OPEN

0.45*

400*

I_FC=5μA, R_CL=100kΩ,

1.2A pull-up on DRN

I_FC=5μA

ILIM blanking time

CL voltage

V_CL

2.94 3.00 3.06

0.34 0.70 0.84

FC voltage

V_FC

I_FC=10μA

Driver on-resistance

Driver off leakage

current

R_{DS (on) (DRN)}

6,7 I_DRN=4.0A

200* 400* mΩ

I_{DRN (OFF)}

6,7 V_DRN=12V

1.5 20.0

6* 11*

μA

High-side driver

on-resistance

High-side driver

current = 50mA

VDD=OPEN,

DRIVER

R_{DS (on) (HSDRV)}

5,6

Ω

DRN discharge current I_DIS

6,7 DRN=12V,

Fault latch set

2.38 3.40 4.42 mA

DS405-00010-1v0-E

MB39C602

No.

Value

Unit

Parameter

Zero current threshold

Symbol

Condition

Min Typ Max

V_{ZCD (TH)}

V_{ZCD (CLAMP)}

V_{ZCD (START)}

20* 50*

voltage

Clamp voltage

Start timer operation

threshold voltage

Driver turn-on Delay

time

I_ZCD=-10μA

-200 -160 -100 mV

TRANSFORMER

ZERO CURRENT

DETECTION

0.10 0.15 0.20

μs

150Ω pull-up 12V on

t_{DLY (ZCD)}

150

2.4

DRN

Wait time for zero

current detection

Start timer period

t_{WAIT (ZCD)}

t_ST

2.0

2.8

V_ZCD=0V

150 240 300

4.85 5.00 5.15

μs

OVP threshold voltage V_{ZCD (OVP)}

OVERVOLTAGE

FAULT

OVP blanking time

Input bias current

Shutdown Threshold

voltage

t_{BLANK, OVP}

I_{ZCD (bias)}

0.6

1.0

1.7

μs

μA

V_ZCD=5V

-0.1

+0.1

V_{OTC (Vth)}

I_{OTC, PU}

OTC=

0.7

1.0

1.3

SHUTDOWN

THRESHOLD

Shutdown OTC

current

V_OTC= V_{OTC (vth)}

-600 -450 -300 μA

MAXIMUM ON

TIME

ON-Time

t_OTC

R_OTC=76kΩ

3.4

2.7

3.8

3.0

4.2

3.3

μs

OTC voltage

V_OTC

Shutdown temperature T_SD

Tj, temperature rising

Tj, temperature

falling,degrees below

T_SD

+150*

°C

OTP

Hysteresis

T_{SD_HYS}

+25*

°C

I_{VDD (STATIC)}

V_VDD=20V, V_ZCD=1V

V_VDD=20V

1.36 1.80 2.34 mA

Power supply current

POWER SUPPLY

CURRENT

I_{VDD (OPERATING)}

3.0* 3.7* mA

Power supply current

for UVLO

_VDD= VDD _(ON)

I_{VDD (UVLO)}

285 500

100mV

*: Standard design value

DS405-00010-1v0-E

MB39C602

FUNCTION EXPLANATION

(1) LED Current Control Function

MB39C602 is a flyback type switching regulator controller. The LED current is regulated by controlling the

switching on-time depending on the LED load.The LED current is converted into detecting voltage (Vs) by

sense resistor (Rs) connected in series with LED. Vs is compared by an external error amplifier (Err

AMP).When Vs falls below a reference voltage, Err AMP output rises and the current that flows into the

Opto-Coupler is decreased.

The OTC pin current is controlled via the Opto-Coupler in the on-time control block. In on-time control, it

controls on-time at OTC pin current. So, on-time increases when the current of the OTC pin decreases. And

the average current supplied to LED is regulated, because on-time is regulated at the constant switching

frequency.

(2) Cascode Switching

The switch in Primary Winding is a cascode connection.The gate of external MOSFET is connected with

the VCG pin, and the source is connected with the drain of internal Driver MOSFET. When the swich is

on-state, internal Driver MOSFET is turned on, HS Driver MOSFET is turned off, and the source voltage of

external MOSFET goes down to GND. For this period the DC bias is supplied to the gate of external

MOSFET from the VCG pin. Therefore external MOSFET is turned on.

When the switch is off-state, internal Driver MOSFET is turned off, HS Driver MOSFET is turned on, and

the source voltage of external MOSFET goes up to VCG voltage. For this period the DC bias is supplied to

the gate of external MOSFET from the VCG pin. Therefore external MOSFET is turned off. Moreover, the

current flowing into internal Driver MOSFET is equal to the current of Primary Winding. Therefore, the

peak current into Primary Winding can be detected without the sense resistor.

(3) Natural PFC (Power Factor Correction) Function

In the AC voltage input, when the input current waveform is brought close to the sine-wave, and the phase

difference is brought close to Zero, Power Factor is improved. In the flyback method operating in

discontinuous conduction mode, when the input capacitance is set small, the input current almost becomes

equal with peak current (I_PEAK) of Primary Winding.

_BULKt_ON

V_BULK

L_MP

V_BULK: Supply voltage of Primary Winding

I_PEAK

(

)

L_MP

t_ON

: Inductance of Primary Winding

: On-time

L_MP

(

)

(

)

t_ON

In on-time control, if loop response of Error Amp. is set to lower than the AC frequency (below 1/10 of the

AC frequency), on-time can be constant. Therefore, input current is proportional to input voltage, so Power

Factor is regulated.

DS405-00010-1v0-E

MB39C602

(4) Power-Up Sequencing

When the voltage is input to VBULK, the electric charge is charged to capacitance of the VCG pin (CVCG)

through starting resistor (Rst). So, the voltage of the VCG pin rises. The voltage of the DRN pin rises by

source follower when the voltage of the VCG pin reaches the threshold voltage of the external

HVMOSFET.

The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor

(CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of

UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started.

After the switching begins, the voltage at the VDD pin is supplied from Auxiliary Winding through the

external diode (DBIAS). The voltage of an Auxiliary Winding is decided by rolling number ratio of

Auxiliary Winding and Secondary Winding, and the voltage of Secondary Winding. Therefore, the voltage

at the VDD pin is not supplied, until the voltage of Auxiliary Winding rises more than the voltage at the

VDD pin. In this period, it is necessary to set the capacitor of the VDD pin to prevent the voltage of the

VDD pin from falling below the threshold voltage of UVLO.

The external Schottky diode (D1) is required between the DRN pin and VDD pin. This diode is used to

prevent the current that flows through the body diode of the VDD Switch.

 Current Passing When Starting

VBULK

Primary

Winding

Rst

Ist

HV-MOSFET

CVCG

VDD Start-up Current

CVDD

DBIAS

VDD Operating and LPM Current

Auxiliary

Winding

VDD

VCG

VDD

Switch

Drive

VCG

Shunt

14V

Enable

PWM

DRN

GND

UVLO

Fault

10V/8V

Driver

PWM

Control

DS405-00010-1v0-E

MB39C602

 Power-Up Sequencing

VAC

VLED

UVLO threshold

10V

VDD

VCG

DRN

(5) Power Down Sequencing

When AC power is removed from the AC line, the current does not flow to Secondary Winding even if HV

MOSFET is switching. The LED current is supplied from the output capacitance and decreases gradually.

Similarly, the voltage at the VDD pin decreases because the current does not flow into Auxiliary Winding.

The switching stops and MB39C602 becomes shutdown when the voltage at the VDD pin falls below the

threshold voltage of UVLO.

 Power Down Sequencing

VAC

VLED

VDD

UVLO threshold 8V

VCG

DRN

DS405-00010-1v0-E

MB39C602

(6) OTC Part

It is set on-time by connecting resistance (R_OTC) with OTC pin.

As shown in following figure, the on-time can be controlled by connecting the collector of the

Opto-Coupler through resistor from OTC.

 OTC pin Control

On-Time Modulation

Fault Timing

Fault

and Control

V_GATE

I_OTC

Fault Latch

Reset

UVLO

Shutdown

and Restart

Thermal

Shutdown

OTC

The following figure shows how the on-time is programmed over the range of between 1.5μs and 5.0μs for

either range of programming resistors. On-time is related to the programmed resistor based on the following

equations.

Ω

_OTC= t_OTC× (2 × 10¹⁰

[ ]

)

 On-time Setting Range

5.0

1.5

100

R_OTC- Constant On-Time Resistance [kΩ]

Moreover, it can be shutted down by making the voltage of the OTC pin below "V_{OTC (Vth)}(typ 1V)".

DS405-00010-1v0-E

MB39C602

(7) CL Part

It is set the peak current of Primary Winding by connecting resistance with CL pin.

The maximum peak current of Primary Side is set by connecting resistance (R_CL) between the CL pin and

GND.

100kV

_DRN(pk)= (

)

R_CL

An about 400ns blanking time of the beginning of switching cycle is masking the spike noise. As a result, it

prevents the sense of current from malfunctioning (See the figure below.).

 Peak Current Control with CL pin

From

DRN

High-Voltage

MOSFET Source

I_DRN

Driver

V_GATE

Current

Sense

t_BLANKCL

GND

I_CL

R_CL

DS405-00010-1v0-E

MB39C602

(8) FC Part

The switching frequency is controlled by setting the current of the FC pin. In on-time control, the switching

frequency is set by pulling up the FC pin to VDD.

Switching frequency range is from 30kHz to 120kHz.

 Switching Frequency Range

120

100

150165 200

I_FC-f_SWControl Current [μA]

DS405-00010-1v0-E

MB39C602

(9) ZCD Part

MB39C602 requires the following two conditions in order to start the next switching cycle.

1. The time since the last turn-on edge must be equal to or longer than the switching time set by I_FC.

2. Immediately after zero current detection at ZCD pin. Or, the time since the last zero current detection

must be longer than t_{WAIT (ZCD)}(2.4μs or less).

The ZCD pin is connected with Auxiliary Winding of the transformer through the resistance division, and

detects zero current as shown below.

A delay, 50ns to 200ns, can be added with C_ZCDto adjust the turn-on of the primary switch with the resonant

bottom of Primarty Winding waveform.

 Switching Waveform at detecting zero current

High Voltage

MOSFET Drain

C_ZCD- Based

Delay

ZCD Input

Switching Time

Switching Time (t_SW

)

by I^FC

I_DRN

 ZCD pin Connection

ZCD1

ZCD2

Zero Current

Detect

ZCD

20mV

ZCD

Fault

Fault Timing

and Control

DS405-00010-1v0-E

MB39C602

VARIOUS PROTECTION CIRCUITS

 Under voltage lockout protection (UVLO)

The under voltage lockout protection (UVLO) protects IC from malfunction and protects the system from

destruction/deterioration during the transient state and momentary drop due to start up for the power supply

pin voltage (VDD). The voltage decrease of the VDD pin is detected with comparator, and output HS

DRIVER is turned off and output DRIVER is turned off, and the switching is stopped. The system returns if

the VDD pin becomes more than the threshold voltage of the UVLO circuit.

 Output over voltage Proteciton (OVP)

When LED is in the state of open and the output voltage rises too much, the voltage of Auxiliary Winding

and the voltage of the ZCD pin rise. The over voltage is detected by sampling this voltage of the ZCD pin.

When ZCD pin voltage rises more than the threshold voltage of OVP, the over voltage is detected. Output

HS DRIVER is turned off, and output DRIVER is turned off, and the switching is stopped. (latch-off)

If the VDD pin becomes below the voltage of Fault Latch Reset, OVP is released.

 Over temperature protection (OTP)

The over temperature protection (OTP) is a function to protect IC from the thermal destruction. When the

junction temperature reaches +150°C, output HS DRIVER is turn off, and output DRIVER is turned off,

and the switching is stopped. It returns again when the junction temperature falls to +125°C (automatic

recovery).

DS405-00010-1v0-E

MB39C602

VARIOUS FUNCTION TABLES

DRN

Detection

Condition at

Protected

Operation

Return

Condition

Function

Remarks

Discharge

LS_DRV HS_DRV VDD SW

Normal Operation

OFF

Under Voltage Lockout

Protection (UVLO)

OTC

OFF

VDD < 8.0V

OTC = GND

VDD > 10.2V

OTC > 1V

Standby

Shutdown

VDD < 6V

→

VDD > 10.2V

Output Over Voltage

Protection (OVP)

OFF

ZCD > 5V

Latch-off

Over Temperature

Protection (OTP)

OFF

Tj > +150°C

Tj < +125°C

DS405-00010-1v0-E

MB39C602

I/O PIN EQUIVALENT CIRCUIT SCHEMATIC

No.

Name

Equivalent Circuit Schematic

Vref 5V

GND

ZCD

Vref 5V

ZCD

GND

Vref 5V

GND

OTC

Vref 5V

OTC

GND

DS405-00010-1v0-E

MB39C602

No.

Name

VCG

Equivalent Circuit Schematic

VDD

Vref 5V

VCG

DRN

GND

DS405-00010-1v0-E

MB39C602

USAGE PRECAUTION

1. Do not configure the IC over the maximum ratings.

If the IC is used over the maximum ratings, the LSI may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside

of these conditions can have an adverse effect on the reliability of the LSI.

2. Use the device within the recommended operating conditions.

The recommended values guarantee the normal LSI operation under the recommended operating conditions.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common

impedance.

4. Take appropriate measures against static electricity.

 Containers for semiconductor materials should have anti-static protection or be made of conductive

material.

 After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

 Work platforms, tools, and instruments should be properly grounded.

 Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in serial between body and

ground.

5. Do not apply negative voltages.

The use of negative voltages below - 0.3 V may make the parasitic transistor activated to the LSI, and can

cause malfunctions.

DS405-00010-1v0-E

MB39C602

ORDERING INFORMATION

Part number

Package

Remarks

8-pin plastic SOP

(FPT-8P-M02)

MB39C602PNF

DS405-00010-1v0-E

MB39C602

RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB),

and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is

RoHS compliant.

MARKING FORMAT (Lead Free version)

XXXX

XXX

Lead-free version

INDEX

DS405-00010-1v0-E

MB39C602

LABELING SAMPLE (Lead free version)

Lead-free mark

JEITA logo JEDEC logo

MB123456P - 789 - GE1

(3N) 1MB123456P-789-GE1 1000

(3N)2 1561190005 107210

QC PASS

PCS

1,000

MB123456P - 789 - GE1

ASSEMBLED IN JAPAN

2006/03/01

MB123456P - 789 - GE1

1/1

1561190005

0605 - Z01A 1000

"ASSEMBLED IN CHINA" is printed on the label

of a product assembled in China.

The part number of a lead-free product has

the trailing characters "E1".

DS405-00010-1v0-E

MB39C602

MB39C602PNF RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY

LEVEL

[FUJITSU SEMICONDUCTOR Recommended Mounting Conditions]

Recommended Reflow Condition

Item

Condition

IR (infrared reflow), warm air reflow

2 times

Mounting Method

Mounting times

Please use it within two years after

Before opening

manufacture.

From opening to the 2nd reflow

Less than 8 days

Storage period

Please process within 8 days

after baking (125°C ±3°C, 24H+ 2H/─0H) .

Baking can be performed up to two times.

When the storage period after

opening was exceeded

Storage conditions

5°C to 30°C, 70% RH or less (the lowest possible humidity)

[Mounting Conditions]

(1) Reflow Profile

260°C

255°C

Main heating

170 °C

190 °C

(b)

(c)

(d)

(e)

(a)

(d')

"H" rank : 260°C Max

(a) Temperature Increase gradient

(b) Preliminary heating

(d) Peak temperature

: Average 1°C/s to 4°C /s

: Temperature 170°C to 190°C, 60 s to 180 s

: Average 1°C /s to 4°C /s

: Temperature 260°C Max; 255°C or more, 10 s or less

: Temperature 230°C or more, 40 s or less

(d') Main Heating

Temperature 225°C or more, 60 s or less

Temperature 220°C or more, 80 s or less

: Natural cooling or forced cooling

(e) Cooling

Note: Temperature : the top of the package bod

(2) JEDEC Condition: Moisture Sensitivity Level 3 (IPC/JEDEC J-STD-020D)

DS405-00010-1v0-E

MB39C602

(3) Recommended manual soldering (partial heating method)

Item

Condition

Before opening

Within two years after manufacture

Storage period

Within two years after manufacture

(No need to control moisture during the storage

period because of the partial heating method.)

Between opening and mounting

Storage conditions

5°C to 30°C, 70% RH or less (the lowest possible humidity)

Temperature at the tip of a soldering iron: 400°C Max

Time: Five seconds or below per pin*

Mounting conditions

*: Make sure that the tip of a soldering iron does not come in contact with the package body.

(4) Recommended dip soldering

Item

Condition

Mounting times

1 time

Please use it within two years after

Before opening

manufacture.

From opening and mounting

Less than 14 days

Storage period

Please process within 14 days

after baking (125°C ±3°C, 24H+ 2H/─0H) .

Baking can be performed up to two times.

When the storage period after

opening was exceeded

Storage conditions

Mounting condition

5°C to 30°C, 70% RH or less (the lowest possible humidity)

Temperature at soldering tub: 260°C Max

Time: Five seconds or below

DS405-00010-1v0-E

MB39C602

 PACKAGE DIMENSIONS

8-pin plastic SOP

Lead pitch

1.27 mm

3.9 mm × 5.05 mm

Gullwing

Package width×

package length

Lead shape

Sealing method

Mounting height

Weight

Plastic mold

1.75 mm MAX

0.06 g

(FPT-8P-M02)

8-pin plastic SOP

(FPT-8P-M02)

Note 1) *1 : These dimensions include resin protrusion.

Note 2) 2 : These dimensions do not include resin protrusion.

Note 3) Pins width and pins thickness include plating thickness.

Note 4) Pins width do not include tie bar cutting remainder.

¹5.05_–⁺₀^0._.²₂₀⁵.199^+.010

0.22–⁺0⁰.^.007³

–.008

.009^+–.001³

3.90±0.30 6.00±0.20

Details of "A" part

1.55±0.20

(.061±.008)

(.154±.012) (.236±.008)

45°

(Mounting height)

0.25(.010)

0.40(.016)

0~8°

"A"

1.27(.050)

0.44±0.08

(.017±.003)

0.13(.005)

0.50±0.20

(.020±.008)

0.60±0.15

0.15±0.10

(.006±.004)

(Stand off)

(.024±.006)

0.10(.004)

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10

Please check the latest package dimension at the following URL.

http://edevice.fujitsu.com/package/en-search/

DS405-00010-1v0-E

MB39C602

MEMO

DS405-00010-1v0-E

MB39C602

MEMO

DS405-00010-1v0-E

MB39C602

FUJITSU SEMICONDUCTOR LIMITED

Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,

Kohoku-ku Yokohama Kanagawa 222-0033, Japan

Tel: +81-45-415-5858

http://jp.fujitsu.com/fsl/en/

For further information please contact:

North and South America

Asia Pacific

FUJITSU SEMICONDUCTOR AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

FUJITSU SEMICONDUCTOR ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://sg.fujitsu.com/semiconductor/

Tel: +1-408-737-5600

Fax: +1-408-737-5999

http://us.fujitsu.com/micro/

Europe

FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.

30F, Kerry Parkside, 1155 Fang Dian Road,

Pudong District, Shanghai 201204, China

Tel : +86-21-6146-3688 Fax : +86-21-6146-3660

http://cn.fujitsu.com/fss/

FUJITSU SEMICONDUCTOR EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/semiconductor/

Korea

FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.

2/F, Green 18 Building, Hong Kong Science Park,

Shatin, N.T., Hong Kong

Tel : +852-2736-3232 Fax : +852-2314-4207

http://cn.fujitsu.com/fsp/

FUJITSU SEMICONDUCTOR KOREA LTD.

902 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fsk/