NSQA6V8AW5T2/D [ETC]
Low Capacitance TVS Quad Array for ESD Protection ; 低电容TVS阵列四路的ESD保护\n型号: | NSQA6V8AW5T2/D |
厂家: | ETC |
描述: | Low Capacitance TVS Quad Array for ESD Protection
|
文件: | 总4页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NSQA6V8AW5T2
Low Capacitance
Quad Array for
ESD Protection
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
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1
2
3
5
4
Features
• ESD Protection: IEC61000-4-2: Level 4
ESD Protection: MILSTD 883C - Method 3015-6: Class 3
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1 mA @ 5 Volts
• Power Dissipation: 380 mW
• Small SC-88A SMT Package
• Low Capacitance (7 pF Typical @ 3 V)
SC-88A/SOT-323
CASE 419A
Benefits
MARKING DIAGRAM
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Protects the Line Against Transient Voltage Conditions in Either
Direction
4
5
6H
2
• Minimize Power Consumption of the System
• Minimize PCB Board Space
1
3
Typical Applications
6H = Device Marking
= One Digit Date Code
• Instrumentation Equipment
• Serial and Parallel Ports
D
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
ORDERING INFORMATION
Device
Package
Shipping
NSQA6V8AW5T2 SCC-88A 3000/Tape & Reel
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
February, 2003 - Rev. 0
NSQA6V8AW5T2/D
NSQA6V8AW5T2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
Peak Power Dissipation
P
PK
20
W
8 X 20 msec Double Exponential Waveform (Note 1)
Steady State Power - 1 Diode (Note 2)
P
D
380
mW
Thermal Resistance -
Junction to Ambient
Above 25°C, Derate
R
q
JA
327
3.05
°C/W
mW/°C
Operating Junction Temperature Range
Storage Temperature Range
T
-40 to +125
-55 to +150
260
°C
°C
°C
J
T
stg
Lead Solder Temperature - Maximum 10 Seconds Duration
1. Non-repetitive current pulse per Figure 1.
T
L
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR4 board with min. pad.
D
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
7.1
1.0
13
Unit
V
Breakdown Voltage (I = 1 mA) (Note 3)
V
BR
6.4
6.8
T
Leakage Current (V
= 5.0 V)
I
R
-
-
-
-
-
-
mA
V
RWM
Clamping Voltage 1 (I = 1.6 A, 8 X 20 msec Waveform)
V
C
PP
Maximum Peak Pulse Current (8 X 20 msec Waveform)
I
PP
1.6
A
Junction Capacitance - (V = 0 V, f = 1 MHz)
C
-
-
12
6.7
15
9.5
pF
R
J
Junction Capacitance - (V = 3 V, f = 1 MHz)
R
3. V is measured at pulse test current I .
BR
T
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NSQA6V8AW5T2
100
110
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
50
75
100
125
150
1
10
100
1000
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Power Derating Curve
Figure 1. Pulse Width
0.16
0.14
0.12
0.10
0.08
0.06
0.04
14
12
10
8
T = 25°C
A
6
4
2
0
0.02
0
-60 -40
-20
0
20
40
60
80
100
0
1
2
3
4
5
6
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 3. Reverse Leakage versus
Temperature
Figure 4. Capacitance
1
100
90
80
70
60
50
40
30
20
PEAK VALUE I
@ 8 ms
t
r
RSM
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
0.1
HALF VALUE I
/2 @ 20 ms
RSM
0.01
t
P
10
0
T = 25°C
A
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
V , FORWARD VOLTAGE (V)
F
t, TIME (ms)
Figure 6. Forward Voltage
Figure 5. 8 × 20 ms Pulse Waveform
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NSQA6V8AW5T2
PACKAGE DIMENSIONS
SC-88A/SOT-323
5-LEAD PACKAGE
CASE 419A-02
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD 419A−02.
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
5
4
3
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
-B-
S
1
2
0.026 BSC
0.65 BSC
−−−
0.004
0.004
0.004
0.010
0.012
−−−
0.10
0.10
0.10
0.25
0.30
K
N
S
0.008 REF
0.20 REF
M
M
0.2 (0.008)
B
D 5 PL
0.079
0.087
2.00
2.20
N
J
C
K
H
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
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Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
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NSQA6V8AW5T2/D
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