NTTD1P02R2/D [ETC]
Power MOSFET -1.45 Amps， -20 Volts ; 功率MOSFET -1.45安培，伏特-20\n
| 型号： | NTTD1P02R2/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET -1.45 Amps， -20 Volts
|
| 文件： | 总8页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTD1P02R2
Product Preview
Power MOSFET
-1.45 Amps, -20 Volts
P–Channel Enhancement Mode
Dual Micro8 Package
http://onsemi.com
Features
• Ultra Low R
DS(on)
–1.45 AMPERES
–20 VOLTS
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
160 mW @ VGS = –4.5
Applications
Dual P–Channel
• Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
V
–20
V
V
S
DSS
Gate–to–Source Voltage – Continuous
V
"8.0
GS
Thermal Resistance –
Junction–to–Ambient (Note 1.)
R
P
I
I
250
0.50
–1.45
–1.15
–10
°C/W
W
A
A
A
θ
JA
8
Total Power Dissipation @ T = 25°C
A
D
Continuous Drain Current @ T = 25°C
A
D
1
Continuous Drain Current @ T = 70°C
A
D
Pulsed Drain Current (Note 3.)
I
DM
Micro8
CASE 846A
STYLE 2
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ T = 25°C
R
P
125
1.0
°C/W
W
θ
JA
A
D
Continuous Drain Current @ T = 25°C
I
I
–2.04
–1.64
–16
A
A
A
A
D
Continuous Drain Current @ T = 70°C
A
D
MARKING DIAGRAM
& PIN ASSIGNMENT
Pulsed Drain Current (Note 3.)
I
DM
Operating and Storage
Temperature Range
T , T
–55 to
+150
°C
J
stg
1
2
3
4
Drain 1
Drain 1
Drain 2
Drain 2
8
7
6
5
Source 1
Gate 1
Source 2
Single Pulse Drain–to–Source Avalanche
E
AS
35
mJ
YWW
BC
Energy – Starting T = 25°C
J
Gate 2
(V = –20 Vdc, V = –4.5 Vdc,
DD
GS
Peak I = –3.5 Apk, L = 5.6 mH,
L
(Top View)
= Year
WW = Work Week
BC = Device Code
R
= 25 Ω)
G
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°C
Y
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
ORDERING INFORMATION
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Device
NTTD1P02R2
Package
Shipping
4000/Tape & Reel
Micro8
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2000 – Rev. 0
NTTD1P02R2/D
NTTD1P02R2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain–to–Source Breakdown Voltage
V
Vdc
(BR)DSS
(V = 0 Vdc, I = –250 µAdc)
Temperature Coefficient (Positive)
–20
–
–
–12
–
–
GS
D
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 0 Vdc, V = –20 Vdc, T = 25°C)
–
–
–
–
–1.0
–10
GS
DS
J
(V = 0 Vdc, V = –20 Vdc, T = 125°C)
GS
DS
J
Gate–Body Leakage Current
(V = –8 Vdc, V = 0 Vdc)
I
I
nAdc
nAdc
GSS
–
–
–
–
–100
100
GS
DS
Gate–Body Leakage Current
(V = +8 Vdc, V = 0 Vdc)
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Vdc
(V = V , I = –250 µAdc)
Temperature Coefficient (Negative)
–0.7
–
–0.95
2.3
–1.4
–
DS
GS
D
Static Drain–to–Source On–State Resistance
R
Ω
DS(on)
(V = –4.5 Vdc, I = –1.45 Adc)
–
–
–
0.130
0.175
0.190
0.160
0.250
–
GS
D
(V = –2.7 Vdc, I = –0.7 Adc)
GS
D
(V = –2.5 Vdc, I = –0.7 Adc)
GS
D
Forward Transconductance (V = –10 Vdc, I = –0.7 Adc)
g
FS
–
2.5
–
Mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
265
100
60
–
–
–
iss
(V = –16 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 4. and 5.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
–
–
–
–
10
25
30
25
10
20
30
20
5.0
1.5
2.0
–
–
ns
ns
d(on)
Rise Time
t
r
(V = –16 Vdc, I = –1.45 Adc,
DD
D
V
GS
= –4.5 Vdc, R = 6.0 Ω)
G
Turn–Off Delay Time
Fall Time
t
t
t
–
d(off)
t
f
–
Turn–On Delay Time
Rise Time
–
d(on)
t
r
–
(V = –16 Vdc, I = –0.7 Adc,
DD
D
V
GS
= –4.5 Vdc, R = 6.0 Ω)
G
Turn–Off Delay Time
Fall Time
–
d(off)
t
f
–
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Q
10
–
nC
tot
gs
gd
(V = –16 Vdc,
DS
Q
Q
V
GS
= –4.5 Vdc,
I
D
= –1.45 Adc)
–
BODY–DRAIN DIODE RATINGS (Note 4.)
Diode Forward On–Voltage
(I = –1.45 Adc, V = 0 Vdc)
V
–
–
–0.91
–0.72
–1.1
–
Vdc
ns
S
GS
SD
(I = –1.45 Adc, V = 0 Vdc,
S
GS
T = 125°C)
J
Reverse Recovery Time
t
–
–
–
–
25
13
–
–
–
–
rr
(I = –1.45 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/µs)
S
t
12
b
Reverse Recovery Stored Charge
Q
0.015
µC
RR
4. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
* Handling precautions to protect against electrostatic discharge is mandatory.
http://onsemi.com
2
NTTD1P02R2
3
2
3
–2.7 V
–2.9 V
–3.1 V
–3.3 V
–3.7 V
–4.5 V
–2.5 V
V
DS
≥ –10 V
–2.3 V
T = 25°C
J
–2.1 V
2
–8 V
–1.9 V
–1.7 V
T = –55°C
J
1
0
1
0
T = 100°C
T = 25°C
J
J
V
= –1.5 V
GS
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0
0.5
1
1.5
2
2.5
3
3.5
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
–V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
T = 25°C
J
I
= –1.45 A
D
0.3
0.2
0.1
0
V
GS
= –2.5 V
T = 25°C
J
V
V
= –2.7 V
= –4.5 V
GS
GS
0.1
0
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
–I DRAIN CURRENT (AMPS)
D,
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1
100
10
1
V
GS
= 0 V
I
V
= –1.45 A
D
= –4.5 V
GS
T = 125°C
J
T = 100°C
J
0.8
0.6
–50 –25
0
25
50
75
100
125 150
4
8
12
16
20
T
J,
JUNCTION TEMPERATURE (°C)
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
http://onsemi.com
3
NTTD1P02R2
800
5
20
18
16
14
12
10
8
QT
Q2
V
= 0 V
V
GS
= 0 V
DS
C
iss
T = 25°C
J
4
3
2
600
400
C
rss
–V
GS
Q1
C
C
iss
6
200
0
I
D
= –1.45 A
1
0
–V
DS
4
T = 25°C
J
oss
rss
2
0
C
0
1
2
3
4
5
6
10
5
0
5
10
15
20
–V
GS
–V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
V
D
= –16 V
V
= 0 V
DD
GS
1.6
1.2
0.8
I
= –1.45 A
T = 25°C
J
V
GS
= –4.5 V
t
r
t
d (off)
10
t
f
t
d (on)
0.4
0
1
10
100
1
0.4
0.5
0.6
0.7
0.8
0.9
1
R
GATE RESISTANCE (OHMS)
–V
SD,
SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
100
V
GS
= 8 V
SINGLE PULSE
di/dt
T
C
= 25°C
I
S
10
1
100 ms
t
rr
1 ms
t
a
t
b
TIME
10 ms
0.25 I
t
p
S
0.1
I
S
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
dc
0.01
0.1
1
10
100
Figure 12. Diode Reverse Recovery Waveform
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
P
(pk)
R
(t) = r(t) R
θ
JC
0.02
0.01
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
t
1
1
t
2
T
- T = P
C
R (t)
θ
JC
J(pk)
(pk)
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.1
1.0E–05 1.0E–04
1.0E–03
1.0E–02
1.0E–01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 13. Thermal Response
INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self–align when
subjected to a solder reflow process.
0.041
1.04
0.208
5.28
0.126
3.20
0.015
0.38
0.0256
0.65
inches
mm
http://onsemi.com
5
NTTD1P02R2
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 14 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
STEP 7
COOLING
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 2
VENT
STEP 3
HEATING
SOAK" ZONES 2 & 5
RAMP"
205° TO 219°C
PEAK AT
SOLDER JOINT
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 14. Typical Solder Heating Profile.
http://onsemi.com
6
NTTD1P02R2
TAPE & REEL INFORMATION
Micro8
Dimensions are shown in millimeters (inches)
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
4.10 (.161)
3.90 (.154)
PIN
NUMBER 1
B
B
A
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
1.50 (.059)
1.30 (.052)
A
FEED DIRECTION
8.10 (.318)
7.90 (.312)
SECTION A–A
5.40 (.212)
5.20 (.205)
SECTION B–B
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
NOTES:
1. CONFORMS TO EIA–481–1.
2. CONTROLLING DIMENSION: MILLIMETER.
3. INCLUDES FLANGE DISTORTION AT OUTER EDGE.
4. DIMENSION MEASURED AT INNER HUB.
http://onsemi.com
7
NTTD1P02R2
PACKAGE DIMENSIONS
Micro8
CASE 846A–02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–A–
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
–B–
K
MILLIMETERS
INCHES
PIN 1 ID
G
DIM MIN
MAX
3.10
3.10
1.10
MIN
MAX
0.122
0.122
0.043
0.016
D 8 PL
A
B
C
D
G
H
J
2.90
2.90
---
0.114
0.114
---
M
S
S
0.08 (0.003)
T B
A
0.25
0.40 0.010
0.65 BSC
0.026 BSC
0.05
0.13
4.75
0.40
0.15 0.002
0.23 0.005
5.05 0.187
0.70 0.016
0.006
0.009
0.199
0.028
SEATING
PLANE
–T–
K
L
C
0.038 (0.0015)
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
L
J
H
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, UK, Ireland
NTTD1P02R2/D
相关型号：
NTTD4401FR2G
2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
ROCHESTER
©2020 ICPDF网 联系我们和版权申明