NTTFD2D8N03P1E [ONSEMI]
MOSFET, Power, 30V POWERTRENCH® Power Clip;
| 型号： | NTTFD2D8N03P1E |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power, 30V POWERTRENCH® Power Clip |
| 文件： | 总11页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power,
N-Channel, PowerTrench[
Power Clip, Symmetric Dual
30 V
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.5 mW @ 10 V
3.0 mW @ 4.5 V
2.5 mW @ 10 V
3.0 mW @ 4.5 V
Q1
30 V
80 A
80 A
Q2
30 V
NTTFD2D8N03P1E
Features
• Small Footprint (3.3mm x 3.3mm) for Compact Design
ELECTRICAL CONNECTION
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• DC−DC Converters
• System Voltage Rails
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Q1
Q2
Unit
V
V
DSS
30
30
3ESN
AYWWZZ
V
GS
+16
−12
+16
−12
V
PIN1
WQFN12
3.3X3.3, 0.65P
CASE 510CJ
Continuous Drain
Current R
I
80
58
26
80
58
26
A
T
T
= 25°C
= 85°C
D
C
q
JC
Steady
(Note 3)
C
State
3ESN = Specific Device Code
Power Dissipation
P
W
A
D
D
D
A
Y
= Assembly Location
= Year
T = 25°C
A
R
(Note 3)
q
JC
WW
ZZ
= Work Week
= Assembly Lot Code
Continuous Drain
Current R
I
D
21.1 21.1
15.2 15.2
1.79 1.79
T = 25°C
A
q
JA
T = 85°C
A
Steady
State
(Notes 1, 3)
Power Dissipation
P
I
W
A
T = 25°C
A
R
(Notes 1, 3)
q
JA
ORDERING INFORMATION
Continuous Drain
Current R
16.1 16.1
11.6 11.6
1.04 1.04
T = 25°C
A
D
†
Device
NTTFD2D8N03P1E
Package
Shipping
q
JA
T = 85°C
A
Steady
State
(Notes 2, 3)
WQFN12
(Pb−Free)
3000 / Tape &
Reel
Power Dissipation
P
W
T = 25°C
A
R
(Notes 2, 3)
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
327
356
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
55.4 58.8
mJ
Energy
Q1: I = 33.3 A , L = 0.1 mH (Note 4)
L
pk
Q2: I = 34.3 A , L = 0.1 mH (Note 4)
L
pk
Operating Junction and Storage Temperature T , T
−55 to + 150
°C
°C
J
stg
Lead Temperature for Soldering
T
L
260
Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Actual continuous current will be limited by thermal & electro−mechanical
application board design. R
is determined by the user’s board design.
q
JC
4. Q1 100% UIS tested at L = 0.1 mH, IAS = 21.1 A.
Q2 100% UIS tested at L = 0.1 mH, IAS = 21.1 A.
5. This device is Class 1B ESD HBM Rating.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2022 − Rev. 4
NTTFD2D8N03P1E/D
NTTFD2D8N03P1E
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Q1 Max
4.8
Q2 Max
4.8
Unit
Junction−to−Case − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 2, 3)
R
°C/W
q
JC
R
70
70
q
JA
R
120
120
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
V
V
V
= 0 V, I = 1 mA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
(BR)DSS
GS
D
V
mV/°C
mA
Voltage
= 0 V, I = 1 mA
GS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
I
= 1 mA, ref to 25°C
= 1 mA, ref to 25°C
17.9
17.2
(BR)DSS
D
D
T
J
I
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
J
1.0
1.0
100
100
DSS
GS
DS
V
Gate−to−Source Leakage
Current
I
V
V
= 0 V, V = +16 V / −12 V
GS
GSS
DS
nA
= 0 V, V = +16 V / −12 V
DS
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
2.2
2.2
V
= V , I = 400 mA
DS D
GS(TH)
GS
V
V
GS
= V , I = 400 mA
DS D
Negative Threshold
Temperature Coefficient
V
/T
−4.3
−4.5
2.0
I
D
I
D
= 400 mA, ref to 25°C
= 400 mA, ref to 25°C
GS(TH)
J
mV/°C
Drain−to−Source On Resistance
R
V
= 10 V, I = 18 A
2.5
3.0
2.5
3.0
DS(on)
GS
D
V
= 4.5 V, I = 16 A
2.6
GS
D
mW
V
= 10 V, I = 18 A
Q2
1.8
GS
GS
D
V
= 4.5 V, I = 16 A
2.4
D
Forward Transconductance
g
V
= 5 V, I = 18 A
Q1
Q2
Q1
Q2
129
141
0.68
0.75
FS
DS
DS
D
S
V
= 5 V, I = 18 A
D
Gate−Resistance
R
T = 25°C
A
G
W
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
Q1
Q2
Q1
Q2
Q1
Q2
1500
1521
483
498
29
ISS
pF
pF
pF
Output Capacitance
C
OSS
RSS
V
GS
= 0 V, V = 15 V, f = 1 MHz
DS
Reverse Transfer Capacitance
C
22
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFD2D8N03P1E
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge
Q
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9.5
9.3
G(TOT)
nC
nC
nC
nC
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
2.0
GD
Q1: V = 4.5 V, V = 15 V; I = 18 A
GS
DS
D
Q2: V = 4.5 V, V = 15 V; I = 18 A
GS
DS
D
1.6
3.7
GS
3.7
Q
Q1: V = 10 V, V = 15 V; I = 18 A
20.8
20.5
G(TOT)
GS
DS
D
Q2: V = 10 V, V = 15 V; I = 18 A
GS
DS
D
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 7)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13
13.3
5.5
5.8
18.9
19
d(ON)
ns
ns
ns
ns
Rise Time
t
r
V
= 4.5 V
DD
GS
Q1: I = 18 A, V = 15 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
Q2: I = 18 A, V = 15 V, R = 6 W
D DD G
t
f
5.5
5.5
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 7)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8.4
8.7
2
d(ON)
ns
ns
ns
ns
Rise Time
t
r
V
= 10 V
DD
2
GS
Q1: I = 18 A, V = 15 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
26.3
26.3
3.8
3.6
d(OFF)
Q2: I = 18 A, V = 15 V, R = 6 W
D DD G
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
Q1
Q2
0.8
0.67
0.8
0.66
30
1.2
1.2
SD
J
V
S
= 0 V,
GS
I
= 18 A
T = 125°C
J
V
T = 25°C
J
V
S
= 0 V,
= 18 A
GS
I
T = 125°C
J
Reverse Recovery Time
t
Q1
Q2
Q1
Q2
RR
ns
V
S
= 0 V, V = 15 V
DD
29
GS
Q1: I = 18 A, dI /dt = 100 A/ms
S
Reverse Recovery Charge
Q
13
RR
Q2: I = 18 A, dI /dt = 100 A/ms
S S
nC
12.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q1
80
70
80
70
60
50
3.2 V
= 10 V to 3.6 V
V
GS
60
50
40
30
20
2.8 V
40
T = 25°C
J
30
2.6 V
20
10
0
10
T = 125°C
J
T = −55°C
J
0
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
5
4
3
T = 25°C
D
T = 25°C
J
J
I
= 18 A
8
7
V
= 4.5 V
= 10 V
6
GS
5
V
GS
2
1
0
4
3
2
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
100K
10K
1K
V
I
= 10 V
= 18 A
GS
1.6
1.4
1.2
1.0
0.8
T = 150°C
J
D
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
1
0.6
0.4
0.1
−50
−25
0
25
50
75
100
125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q1
10K
1K
10
V
I
= 15 V
= 18 A
DS
9
8
7
6
5
4
3
2
C
D
ISS
T = 25°C
J
C
OSS
100
Q
GD
C
RSS
Q
GS
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20 22
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
100
V
V
= 4.5 V
= 15 V
GS
V
GS
= 0 V
DS
I
D
= 18 A
t
10
1
d(off)
10
t
d(on)
t
f
t
r
T = 125°C
J
T = −55°C
T = 25°C
J
J
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
T
= 25°C
C
1000
100
10
Single Pulse
≤ 10 V
V
GS
100 ms
25°C
1 ms
10
100°C
1
10 ms
100 ms
1 s
10 s
DC
125°C
R
Limit
DS(on)
0.1
Thermal Limit
Package Limit
0.01
1
0.000001 0.00001 0.0001
0.01
0.1
1
10
100
0.001
T , TIME IN AVALANCHE (s)
AV
0.01
0.1
1
V
DS
, DRAIN−SOURCE VOLTAGE(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q1
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q2
80
70
80
70
60
3.2 V
V
= 10 V to 3.6 V
GS
60
50
40
30
20
2.8 V
50
40
T = 25°C
J
30
2.6 V
20
10
10
0
T = 125°C
J
T = −55°C
J
0
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
10
9
5
4
3
T = 25°C
D
T = 25°C
J
J
I
= 18 A
8
7
6
V
= 4.5 V
= 10 V
GS
5
V
2
1
0
GS
4
3
2
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.8
100K
10K
1K
V
I
= 10 V
= 18 A
GS
1.6
1.4
1.2
1.0
0.8
T = 150°C
J
D
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
1
0.6
0.4
0.1
−50
−25
0
25
50
75
100
125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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7
NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q2
10K
1K
10
V
I
= 15 V
= 18 A
DS
9
8
7
6
5
4
3
2
C
D
ISS
T = 25°C
J
C
OSS
100
Q
GD
C
Q
RSS
GS
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20 22
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
100
V
V
= 4.5 V
= 15 V
GS
V
GS
= 0 V
DS
I
D
= 18 A
t
10
1
d(off)
10
t
d(on)
t
f
t
r
T = 125°C
J
T = −55°C
T = 25°C
J
J
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
T
= 25°C
C
1000
100
10
Single Pulse
≤ 10 V
V
GS
100 ms
25°C
1 ms
10
100°C
1
10 ms
100 ms
1 s
10 s
DC
125°C
R
Limit
DS(on)
0.1
Thermal Limit
Package Limit
0.01
1
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
1
V
DS
, DRAIN−SOURCE VOLTAGE(V)
T , TIME IN AVALANCHE (s)
AV
Figure 24. Safe Operating Area
Figure 25. IPEAK vs. Time in Avalanche
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NTTFD2D8N03P1E
TYPICAL CHARACTERISTICS − Q2
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 26. Thermal Characteristics
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WQFN12 3.3X3.3, 0.65P
CASE 510CJ
ISSUE A
DATE 08 AUG 2022
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
G
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13806G
WQFN12 3.3X3.3, 0.65P
PAGE 1 OF 1
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