首页 |元器件品牌

OM6501ST [ETC]

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 5A I(C) | TO-257AA ; 晶体管| IGBT | N -CHAN | 500V V（ BR ） CES | 5A I（C ） | TO- 257AA\n
OM6501ST
型号： OM6501ST
厂家： ETC    ETC
描述：

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 5A I(C) | TO-257AA
晶体管| IGBT | N -CHAN | 500V V（ BR ） CES | 5A I（C ） | TO- 257AA\n

晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅 局域网
文件： 总2页 (文件大小：22K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
OM6501ST  
OM6502ST  
INSULATED GATE BIPOLAR TRANSISTOR  
(IGBT) IN A HERMETIC TO-257AA PACKAGE  
500 Volt, 5 And 10 Amp, N-Channel IGBT  
In A Hermetic Metal Package  
FEATURES  
• Isolated Hermetic Metal Package  
• High Input Impedance  
• Low On-Voltage  
• High Current Capability  
• Fast Turn-Off  
• Low Conductive Losses  
• Available Screened to MIL-S-19500, TX, TXV And S Levels  
DESCRIPTION  
The IGBT power transistor features a high impedance insulated gate and a low  
on-resistance characteristic of bipolar transistors. These devices are ideally suited  
for motor drives, UPS converters, power supplies and resonant power converters.  
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise  
PART  
IC (Cont.)  
V(BR)CES  
V
VCE (sat) (Typ.)  
Tf (Typ.)  
ns  
qJC  
°C/W  
3.8  
PD  
W
TJ  
NUMBER  
OM6501ST  
OM6502ST  
@ 90°C, A  
V
°C  
5
500  
500  
2.8  
2.8  
400  
35  
42  
150  
150  
10  
400  
3.0  
3.1  
SCHEMATIC MECHANICAL OUTLINE  
PACKAGE OPTIONS  
.200  
.190  
.420  
.410  
Collector  
.045  
.035  
.665  
.645  
.150  
.140  
.537  
.527  
1
2
3
.430  
.410  
C
E
G
MOD PAK  
Gate  
.038 MAX.  
.005  
.750  
.500  
Emitter  
.120 TYP.  
.100 TYP.  
.035  
.025  
Pin 1: Collector  
Pin 2: Emitter  
Pin 3: Gate  
6 PIN SIP  
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.  
4 11 R2  
Supersedes 2 07 R1  
3.1 - 139  
PRELIMINARY DATA: OM6501ST  
IGBT CHARACTERISTICS  
PRELIMINARY DATA: OM6502ST  
IGBT CHARACTERISTICS  
Parameter - OFF  
Min. Typ. Max. Units Test Conditions  
Parameter - OFF  
Min. Typ. Max. Units Test Conditions  
V(BR)CES Collector Emitter  
Breakdown Voltage  
500  
V
VCE = 0  
V(BR)CES Collector Emitter  
Breakdown Voltage  
500  
V
VCE = 0  
025Craw  
IC = 250 µA  
IC = 250 µA  
ICES  
Zero Gate Voltage  
Drain Current  
0.25 mA VCE = Max. Rat., VGE = 0  
1.0 mA CE = 0.8 Max. Rat., VGE = 0  
TC = 125°C  
±100 nA VGE = ±20 V  
CE = 0 V  
ICES  
Zero Gate Voltage  
Drain Current  
0.25 mA VCE = Max. Rat., VGE = 0  
1.0 mA CE = 0.8 Max. Rat., VGE = 0  
TC = 125°C  
±100 nA VGE = ±20 V  
CE = 0 V  
V
V
o
S
IGES  
Gate Emitter Leakage  
Current  
IGES  
Gate Emitter Leakage  
Current  
e
,
V
V
Parameter - ON  
Parameter - ON  
nitsr,eAM10  
VGE(th) Gate Threshold Voltage  
VCE(sat) Collector Emitter  
Saturation Voltage  
2.0  
4.0  
V
V
VCE = VGE, IC = 250 µA  
VGE = 15 V, IC = 5 A  
TC = 25°C  
VGE(th) Gate Threshold Voltage  
VCE(sat) Collector Emitter  
Saturation Voltage  
2.0  
2.5  
4.0  
V
V
VCE = VGE, IC = 250 µA  
VGE = 15 V, IC = 10 A  
TC = 25°C  
3.0  
3.0  
VCE(sat) Collector Emitter  
Saturation Voltage  
2.8 3.0  
V
VGE = 15 V, IC = 5 A  
TC = 100°C  
VCE(sat) Collector Emitter  
Saturation Voltage  
2.8 3.0  
V
VGE = 15 V, IC = 10 A  
TC = 100°C  
35USA(0  
Dynamic  
Dynamic  
gfs  
Forward Transductance  
Input Capacitance  
2.0  
260  
50  
S
VCE = 20 V, IC = 5 A  
gfs  
Forward Transductance  
Input Capacitance  
S
VCE = 20 V, IC = 10 A  
Cies  
Coes  
Cres  
pF VGE = 0  
Cies  
Coes  
Cres  
950 pF VGE = 0  
)8354  
Output Capacitance  
pF VCE = 25 V  
pF f = 1 mHz  
Output Capacitance  
140 pF VCE = 25 V  
5-7  
Reverse Transfer Capacitance  
20  
Reverse Transfer Capacitance  
80  
pF f = 1 mHz  
67FXA(5)0835-426  
Switching-Resistive Load  
Switching-Resistive Load  
Td(on)  
tr  
Turn-On Time  
Rise Time  
37  
nS VCC = 400 V, IC = 5 A  
nS VGE = 15 V, Rg = 47  
Td(on)  
tr  
Td(off)  
tf  
Turn-On Time  
Rise Time  
150 nS  
150  
1000 nS VCC = 400 V, IC = 10 A  
700 nS VGE = 15 V, Rg = 100  
1500 nS  
Switching-Inductive Load  
Turn-Off Delay Time  
Fall Time  
tr(Volt)  
tf  
Off Voltage Rise Time  
Fall Time  
.35  
.81  
1.2  
.95  
µS VCEclamp = 400 V, IC = 5 A  
µS VGE = 15 V, Rg = 100  
µS L = 0.1 mH, Tj = 100°C  
mJ  
Switching-Inductive Load  
tcross  
Eoff  
Cross-Over Time  
Turn-Off Losses  
Td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
1.2  
1.5  
2.0  
4.0  
µS VCEclamp = 350 V, IC = 10 A  
µS VGE = 15 V, Rg = 100  
µS L = 180 µH, Tj = 100°C  
mJ  
tcross  
Eoff  
Cross-Over Time  
Turn-Off Losses  

相关型号：

OM6502ST

 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 100A I(C) | TO-257AA
ETC

OM6503SC

 Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON

OM6503SCV

 Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON

OM6504SC

 Insulated Gate Bipolar Transistor, 30A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON

OM6505CSA

 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON

OM6505SA

 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON

OM6506CSA

 Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON

OM6506SA

 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-254AA
ETC

OM6506SAT

 Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON

OM6507SA

 TRANSISTOR | IGBT | N-CHAN | 100V V(BR)CES | 8A I(C) | TO-254AA
ETC

OM6508CSA

 Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON

OM6508SA

 Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明