RF1S530SM9A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 14A I（ D） | TO- 263AB\n
| 型号： | RF1S530SM9A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB
|
| 文件： | 总7页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF1S530SM
Data Sheet
February 2001
File Number 1575.8
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
Features
• 14A, 100V
[ /Title These are N-Channel enhancement mode silicon gate
• r = 0.160Ω
DS(ON)
power field effect transistors. They are advanced power
(RF1S
530SM
)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
/Sub-
ject
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
(14A,
100V,
0.160
Ohm,
N-
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17411.
Ordering Information
Symbol
Chan-
nel
D
PART NUMBER
PACKAGE
BRAND
RF1S530
Power
MOS-
FETs)
/Autho
r ()
RF1S530SM
TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
RF1S530SM9A.
G
S
/Key-
words
(14A,
100V,
0.160
Ohm,
N-
Packaging
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
Chan-
nel
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
Power
MOS-
FETs,
Inter-
sil
Corpo-
ration,
TO-
263AB
)
/Cre-
ator ()
RF1S530SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
100
14
10
56
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
20
79
0.53
69
-55 to 175
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
D
o
W/ C
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
T
C
J, STG
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
RF1S530SM
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V (Figure 10)
GS
MIN
TYP
-
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
I
100
DSS
D
V
V
V
V
V
V
= V , I = 250µA
2
-
4.0
25
250
-
V
GS(TH)
GS
DS
DS
DS
GS
DS
D
Zero Gate Voltage Drain Current
I
= 95V, V
= 0V
-
-
µA
µA
A
DSS
GS
= 0.8 x Rated BV
o
, V
DSS GS
= 0V, T = 150 C
-
-
J
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I
> I
=
x r
, V
DS(ON) MAX GS
= 10V
14
-
D(ON)
D(ON)
20V
I
-
-
500
0.16
-
nA
Ω
GSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 8.3A, V
= 10V (Figures 8, 9)
-
0.14
7.6
12
35
25
25
18
DS(ON)
D
GS
≥ 50V, I = 8.3A (Figure 12)
g
V
5.1
S
DS
D
fs
t
V
= 50V, I ≈ 14A, R ≈ 12Ω, R = 3.4Ω
-
-
-
-
-
15
65
70
59
30
ns
ns
ns
ns
nC
d(ON)
DD
D
G
L
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Rise Time
t
r
Turn-Off Delay Time
t
d(OFF)
Fall Time
t
f
Total Gate Charge
Q
V
= 10V, I = 14A, V
= 0.8 x Rated BV
DSS
g(TOT)
GS
D
DS
(Gate to Source + Gate to Drain)
I
= 1.5mA (Figure 14)
g(REF)
Gate Charge is Essentially Independent of
Operating Temperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
4
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
7
gd
C
V
= 25V, V = 0V, f = 1MHz (Figure 11)
GS
600
250
50
ISS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
L
Measured from the
Modified MOSFET
3.5
D
Contact Screw on Tab To Symbol Showing the
Center of Die
Internal Devices
Inductances
D
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
-
4.5
7.5
-
-
nH
nH
L
D
Internal Source Inductance
L
Measured from the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
S
G
L
S
S
o
Thermal Resistance Junction to Case
R
R
R
-
-
-
-
-
-
1.9
62.5
62
C/W
θJC
θJA
θJA
o
Thermal Resistance Junction to
Ambient
Free Air Operation
C/W
o
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
I
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
-
-
14
56
A
A
SD
D
S
I
SDM
G
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
T = 25 C, I
J
= 14A, V = 0V (Figure 13)
GS
-
-
2.5
250
1.3
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 14A, dI /dt = 100A/µs
5.5
0.17
120
0.6
ns
µC
rr
SD
= 14A, dI /dt = 100A/µs
o
Q
T = 25 C, I
RR
J
SD
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 25V, starting T = 25 C, L = 530µH, R = 25Ω, peak I = 14A (Figures 15, 16).
J G AS
DD
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
RF1S530SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
15
12
9
6
3
0
25
50
75
T , CASE TEMPERATURE ( C)
C
100
150
125
175
125
o
0
25
50
75
100
175
150
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.2
0.1
P
DM
0.05
0.1
t
1
0.02
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
+ T
SINGLE PULSE
PEAK T = P
x Z
θJC
J
DM
C
0.01
10
-5
-4
10
-3
10
-2
10
0.1
, RECTANGULAR PULSE DURATION (s)
1
10
t
P
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
25
3
2
10
10
OPERATION IN THIS
AREA MAY BE
V
= 7V
GS
V
= 10V
= 8V
GS
LIMITED BY r
DS(ON)
V
20
15
10
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10µs
100µs
1ms
10
1
V
= 6V
= 5V
GS
10ms
V
GS
5
0
o
T
T
= 25 C
C
J
o
V
= 4V
= 175 C
GS
SINGLE PULSE
0.1
0
10
V
20
30
40
50
2
3
1
10
10
10
, DRAIN TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
RF1S530SM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
10
1
25
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 8V
DUTY CYCLE = 0.5% MAX
GS
V
≥ 50V
DS
20
15
10
5
V
= 7V
= 6V
GS
V
= 10V
GS
V
GS
o
o
175 C
25 C
V
= 5V
= 4V
GS
V
GS
0.1
0
0
2
3
4
5
1
0
2
4
6
8
10
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
3.0
1.5
1.2
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 14A
GS
D
2.4
1.8
1.2
0.6
0
0.9
0.6
V
= 10V
GS
0.3
0
V
= 20V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
0
12
36
I , DRAIN CURRENT (A)
48
60
24
T , JUNCTION TEMPERATURE ( C)
J
D
FIGURE 9. NORMALIZED DRAINTO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. DRAINTO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
1500
I
= 250µA
V
= 0V, f = 1MHz
D
GS
C
C
C
= C
+ C
ISS
GS
GD
1.15
1.05
0.95
0.85
0.75
1200
900
600
300
= C
GD
RSS
OSS
≈ C + C
DS
GD
C
ISS
C
OSS
C
RSS
0
2
10
, DRAIN TO SOURCE VOLTAGE (V)
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
10
1
T , JUNCTION TEMPERATURE ( C)
V
DS
J
FIGURE 10. NORMALIZED DRAINTO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
RF1S530SM
Typical Performance Curves Unless Otherwise Specified (Continued)
10
8
100
10
1
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
V
≥ 50V
DS
o
25 C
6
o
175 C
o
4
o
25 C
175 C
2
0
0.1
0
5
10
15
20
25
0
0.4
0.8
1.2
1.6
2.0
I
, DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 14A
D
V
= 50V
DS
16
12
8
V
= 20V
DS
V
= 80V
DS
4
0
0
6
12
18
24
30
Q
, GATE CHARGE (nC)
G
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
AS
V
VARY t TO OBTAIN
P
DD
+
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
0
I
AS
0V
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
RF1S530SM
Test Circuits and Waveforms (Continued)
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
0
DS
90%
90%
R
L
+
10%
10%
V
DD
R
G
-
90%
50%
DUT
V
GS
50%
PULSE WIDTH
10%
0
V
GS
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
g(TOT)
V
SAME TYPE
AS DUT
GS
Q
gd
12V
BATTERY
0.2µF
50kΩ
Q
gs
0.3µF
D
S
V
DS
G
DUT
0
0
I
g(REF)
I
G(REF)
0
V
DS
I CURRENT
D
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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