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STB80NF10-T4 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 80A I（ D） | TO- 263AB\n
STB80NF10-T4
型号： STB80NF10-T4
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-263AB
晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 80A I（ D） | TO- 263AB\n

晶体 晶体管
文件： 总7页 (文件大小：68K)
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STB80NF10  
2
2
N - CHANNEL 100V - 0.014Ω - 80A I PAK/D PAK  
LOW Qg STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on )  
ID  
STB80NF10  
100 V < 0.018 Ω  
80 A  
■
■
■
■
TYPICAL RDS(on) = 0.014 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
■
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
3
3
2
1
1
I2PAK  
TO-262  
D2PAK  
TO-263  
DESCRIPTION  
This MOSFET  
series  
realized  
with  
STMicroelectronics unique STripFET process has  
specifically been designed to minimize input  
capacitance and gate charge. It is therefore  
suitable as primary switch in advanced  
high-efficiency, high-frequency isolated DC-DC  
(Suffix ”-1”)  
(Suffix ”T4”)  
INTERNAL SCHEMATIC DIAGRAM  
converters for  
Telecom and  
Computer  
applications. It is also intended for any  
applicationswith low gate drive requirements.  
APPLICATIONS  
■
HIGH-EFFICIENCY DC-DC CONVERTERS  
UPS AND MOTOR CONTROL  
■
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
100  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 kΩ)  
Gate-source Voltage  
V
V
100  
± 20  
80  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
50  
A
IDM( ) Drain Current (pulsed)  
320  
A
•
o
Ptot  
Total Dissipation at Tc = 25 C  
Derating Factor  
210  
W
1.4  
W/oC  
V/ns  
mJ  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
EAS(2) Single Pulse Avalanche Energy  
9
245  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
(•) Pulse width limitedby safe operatingarea  
( 2) starting Tj = 25 oC, ID =80A , VDD = 50V  
(1) ISD ≤ 80 A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA  
1/7  
April 2000  
STB80NF10  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
Max  
0.71  
62.5  
300  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
(Tcase = 25 oC unless otherwisespecified)  
ELECTRICAL CHARACTERISTICS  
OFF  
Symbol  
Parameter  
Test Conditions  
ID = 250 µA VGS = 0  
Min.  
Typ.  
Max.  
Unit  
V(BR)DSS Drain-source  
100  
V
Breakdown Voltage  
Zero Gate Voltage  
Drain Current (VGS = 0) VDS = Max Rating  
IDSS  
IGSS  
VDS = Max Rating  
1
10  
µA  
A
µ
o
Tc =125 C  
Gate-body Leakage  
Current (VDS = 0)  
VGS = ± 20 V  
± 100  
nA  
ON ( )  
Symbol  
VGS(th)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Gate Threshold Voltage VDS = VGS ID = 250 µA  
2
3
4
RDS(on)  
Static Drain-source On VGS = 10 V  
Resistance  
ID = 40 A  
0.014 0.018  
Ω
ID(on)  
On State Drain Current VDS > ID(on) x RDS(on)max  
VGS = 10 V  
80  
A
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID =40 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
20  
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
VDS = 25 V f = 1 MHz VGS = 0  
4300  
600  
240  
pF  
pF  
pF  
2/7  
STB80NF10  
ELECTRICAL CHARACTERISTICS  
(continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Min.  
Typ.  
Max.  
Max.  
Max.  
Unit  
td(on)  
tr  
Turn-on Delay Time  
Rise Time  
VDD = 50 V  
RG = 4.7  
ID = 40 A  
VGS = 10 V  
40  
145  
ns  
ns  
Ω
(Resistive Load, see fig. 3)  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 80 V ID = 80 A VGS = 10 V  
140  
23  
51  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
VDD = 27 V  
ID = 40 A  
134  
115  
ns  
ns  
RG = 4.7 Ω  
VGS = 10 V  
(Resistive Load, see fig. 3)  
td(off)  
tf  
tc  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
Vclamp = 80 V  
RG = 4.7 Ω  
ID = 80 A  
VGS = 10 V  
111  
125  
185  
ns  
ns  
ns  
(Inductive Load, see fig. 5)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
ISD  
ISDM ( )  
Source-drain Current  
Source-drain Current  
(pulsed)  
80  
320  
A
A
•
VSD ( ) Forward On Voltage  
ISD = 80 A VGS = 0  
1.5  
V
trr  
Reverse Recovery  
Time  
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
ISD = 80 A  
VDD = 50 V  
(see test circuit, fig. 5)  
di/dt = 100 A/ s  
155  
850  
11  
ns  
µ
Tj = 150 oC  
Qrr  
nC  
A
IRRM  
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
(•) Pulse width limitedby safe operatingarea  
3/7  
STB80NF10  
Fig. 1  
: Unclamped Inductive Load Test Circuit  
Fig. 2  
: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5  
: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/7  
STB80NF10  
2
TO-262 (I PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
5/7  
STB80NF10  
2
TO-263 (D PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.047  
0.352  
0.393  
0.192  
0.590  
0.050  
0.055  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.409  
0.208  
0.624  
0.055  
0.068  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
10  
0.6  
C2  
D
1.36  
9.35  
10.4  
5.28  
15.85  
1.4  
E
G
4.88  
15  
L
L2  
L3  
1.27  
1.4  
1.75  
D
A
C
C2  
DETAIL”A”  
DETAIL”A”  
A1  
B
B2  
E
G
L3  
L2  
L
P011P6/E  
6/7  
STB80NF10  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil -China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
7/7  

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