STD2NC45T4 [ETC]
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET ; N沟道450V 1.5A 4.1OHM DPAK / IPAK / TO- 92超网功率MOSFET\n
| 型号： | STD2NC45T4 |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
|
| 文件： | 总11页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD2NC45-1
STQ1NC45
N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92
SuperMESH™Power MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STD2NC45-1
STQ1NC45
450 V
450 V
< 4.5 Ω
< 4.5 Ω
1.5 A
0.5 A
30 W
3.1 W
3
■
■
■
■
■
TYPICAL R (on) = 4.1 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
NEW HIGH VOLTAGE BENCHMARK
2
1
IPAK
TO-92
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-92 (Ammopack)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
SALES TYPE
MARKING
D2NC45
Q1NC45
Q1NC45
PACKAGE
PACKAGING
TUBE
STD2NC45-1
STQ1NC45
IPAK
TO-92
TO-92
BULK
STQ1NC45-AP
AMMOPAK
June 2003
1/11
STD2NC45-1, STQ1NC45
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD2NC45-1
STQ1NC45
V
Drain-source Voltage (V = 0)
450
450
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuos) at T = 25°C
1.5
0.95
6
0.5
0.315
2
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
30
3.1
W
C
Derating Factor
0.24
0.025
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
3
T
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤0.5A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
THERMAL DATA
IPAK
4.1
TO-92
Rthj-case
Rthj-amb
Rthj-lead
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
°C/W
°C/W
°C/W
°C
100
120
40
T
Maximum Lead Temperature For Soldering
Purpose
275
260
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IPAK
TO-92
I
Avalanche Current, Repetitive or Not-Repetitive
1.5
25
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
2/11
STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
450
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
DS
1
50
µA
µA
DSS
Drain Current (V = 0)
= Max Rating, T = 125 °C
GS
DS
C
I
Gate-body Leakage
V
= ± 30V
±100
nA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
2.3
3
3.7
4.5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 0.5 A
4.1
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
1.1
S
fs
DS
D(on)
I
= 0.5 A
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
pF
pF
pF
iss
DS
GS
160
27.5
4.7
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 225 V, I = 0.5 A
= 4.7Ω V = 10 V
GS
6.7
4
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
V
V
= 360V, I = 1.5 A,
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7
1.3
3.2
nC
nC
nC
g
DD
GS
D
Q
gs
gd
= 10V, R = 4.7Ω
G
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 360V, I = 1.5 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
8.5
12
18
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
1.5
6.0
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 1.5 A, V = 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
= 1.5 A, di/dt = 100A/µs
= 100V, T = 150°C
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
225
530
4.7
ns
µC
A
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/11
STD2NC45-1, STQ1NC45
Safe Operating Area For IPAK
Thermal Impedance For IPAK
Safe Operating Area For TO-92
Thermal Impedance For TO-92
Output Characteristics
Transfer Characteristics
4/11
STD2NC45-1, STQ1NC45
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/11
STD2NC45-1, STQ1NC45
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Max Id Current vs Tc
Maximum Avalanche Energy vs Temperature
6/11
STD2NC45-1, STQ1NC45
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/11
STD2NC45-1, STQ1NC45
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/11
STD2NC45-1, STQ1NC45
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
TYP.
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
9/11
STD2NC45-1, STQ1NC45
10/11
STD2NC45-1, STQ1NC45
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11/11
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