STGB3NB60MDT4 [ETC]
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT ; N沟道600V 3A TO- 220 / D2PAK的PowerMESH IGBT\n
| 型号： | STGB3NB60MDT4 |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
|
| 文件： | 总11页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP3NB60MD - STGB3NB60MD
N-CHANNEL 3A - 600V TO-220 / D2PAK
PowerMESH™ IGBT
TYPE
V
CES
V
I
C
CE(sat) (Max)
@25°C
@100°C
STGP3NB60MD
STGB3NB60MD
600 V
600 V
< 1.9 V
< 1.9V
3 A
3 A
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (V
3
3
)
2
cesat
1
1
2
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
TO-220
D PAK
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
APPLICATIONS
■
MOTOR CONTROLS
■
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
MARKING
GP3NB60MD
GB3NB60MD
PACKAGE
PACKAGING
TUBE
STGP3NB60MD
TO-220
2
STGB3NB60MDT4
TAPE & REEL
D PAK
June 2003
1/11
STGP3NB60MD - STGB3NB60MD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CES
Collector-Emitter Voltage (V = 0)
600
GS
V
Gate-Emitter Voltage
±20
V
GE
I
C
Collector Current (continuous) at T = 25°C
6
A
C
I
Collector Current (continuous) at T = 100°C
3
24
A
C
C
I
( )
Collector Current (pulsed)
A
CM
P
TOT
Total Dissipation at T = 25°C
68
W
C
Derating Factor
0.55
W/°C
°C
°C
T
stg
Storage Temperature
– 55 to 150
150
T
j
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
1.8
°C/W
°C/W
62.5
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
C
= 250 µA, V = 0
600
V
BR(CES)
GE
I
Collector cut-off
(V = 0)
GE
V
V
V
= Max Rating, T = 25 °C
50
µA
µA
nA
CES
CE
C
= Max Rating, T = 125 °C
100
CE
GE
C
I
Gate-Emitter Leakage
= ± 20V , V = 0
±100
GES
CE
Current (V = 0)
CE
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
5
Unit
V
V
V
V
CE
V
GE
V
GE
= V , I = 250 µA
Gate Threshold Voltage
3
GE(th)
GE
C
Collector-Emitter Saturation
Voltage
= 15V, I = 3 A
1.5
1.2
1.9
V
CE(sat)
C
= 15V, I = 3 A, Tj =125°C
V
C
2/11
STGP3NB60MD - STGB3NB60MD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
V
V
= 15 V, Ic = 3 A
Forward Transconductance
5
S
fs
CE
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25V, f = 1 MHz, V = 0
240
33
6
pF
pF
pF
ies
CE
GE
oes
res
Q
V
V
= 480V, I = 3 A,
= 15V
15
2.2
8
20
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
I
CL
Latching Current
V
clamp
= 480V, R =10 Ω
20
A
G
Tj = 125°C
SWITCHING ON
Symbol
Parameter
Test Conditions
= 480 V, I = 3A, R = 10Ω
= 15 V
Min.
Typ.
Max.
Unit
t
V
V
Turn-on Delay Time
Rise Time
10
4
ns
ns
d(on)
CC
C
G
t
r
GE
(di/dt)
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
V
= 480 V, I = 3A, R = 10Ω
570
30
A/µs
µJ
on
CC
C
G
= 15 V,Tj =125°C
GE
SWITCHING OFF
Symbol
Parameter
Cross-over Time
Test Conditions
= 480 V, I = 3 A,
Min.
Typ.
330
85
Max.
Unit
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
t
V
R
c
cc
C
= 10 Ω , V = 15 V
G
GE
t (V
)
off
Off Voltage Rise Time
Delay Time
r
t (
d off
)
120
240
175
205
810
270
344
515
458
488
t
Fall Time
f
E
(**)
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
off
E
t
ts
V
cc
= 480 V, I = 3 A,
c
C
R
= 10 Ω , V = 15 V
GE
Tj = 125 °C
G
t (V
)
off
r
t (
d off
)
t
Fall Time
f
E
(**)
off
Turn-off Switching Loss
Total Switching Loss
E
ts
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Forward Current
3
24
A
A
f
Forward Current pulsed
Forward On-Voltage
I
fm
V
I = 1.5 A
I = 1.5 A, Tj = 125 °C
f
1.4
1.1
1.9
V
V
f
f
t
Q
I = 3 A ,V = 35 V,
Tj =125°C, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
45
70
2.7
ns
nC
A
rr
f
R
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
3/11
STGP3NB60MD - STGB3NB60MD
Output Characteristics
Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
4/11
STGP3NB60MD - STGB3NB60MD
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
5/11
STGP3NB60MD - STGB3NB60MD
Total Switching Losses vs Collector Current
Thermal Impedance for TO-220/D²PAK
Turn-Off SOA
Emitter-Collector Diode Characteristics
6/11
STGP3NB60MD - STGB3NB60MD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/11
STGP3NB60MD - STGB3NB60MD
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/11
STGP3NB60MD - STGB3NB60MD
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
9/11
1
STGP3NB60MD - STGB3NB60MD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
10/11
STGP3NB60MD - STGB3NB60MD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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11/11
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