STPS80L15C [ETC]

LOW DROP OR-ING POWER SCHOTTKY RECTIFIER ; 低压降的OR-ing功率肖特基整流器\n


型号：	STPS80L15C
厂家：	ETC
描述：	LOW DROP OR-ING POWER SCHOTTKY RECTIFIER 低压降的OR-ing功率肖特基整流器\n
文件：	总5页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS80L15CY

LOW DROP OR-ing POWER SCHOTTKY RECTIFIER

PRELIMINARY DATASHEET

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 40 A

15 V

Tj (max)

V_F(max)

125 °C

0.33 V

FEATURES AND BENEFITS

Max247

PACKAGE,

DUAL

DIODE

CONSTRUCTION, 2 x 40A

15V BLOCKING VOLTAGE SUITABLE FOR 5V

AND 12V OR-ing

EXTREMELY LOW VOLTAGE VOLTAGE

DROP: 0.33V @ 100°C

Max247

OPERATING JUNCTION TEMPERATURE:

125°C

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

The STPS80L15CY uses proprietary barrier

technology to optimize forward voltage drop for

OR-ing functions in n-1 fault tolerant Switch Mode

Power Supplies.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)RMS forward current

I_F(AV)

Average forward current

Tc = 110°C Per diode

δ = 0.5

Per device

I_FSM

I_RRM

P_ARM

T_stg

Surge non repetitive forward current

Repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms sinusoidal

tp = 2 µs F = 1kHz square

tp = 1µs Tj = 25°C

400

36045

- 65 to + 150

125

°C

V/µs

Maximum operating junction temperature

Critical rate of rise of reverse voltage

dV/dt

10000

July 2003 - Ed: 5B

1/5

STPS80L15CY

THERMAL RESISTANCES

Symbol

Parameter

Value

0.7

Unit

R_{th (j-c)}Junction to case

Per diode

Total

°C/W

0.5

R_{th (c)}

Coupling

0.3

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min. Typ. Max.

Unit

I_R*

Reverse leakage current

Tj = 25°C

V_R= 5V

Tj = 100°C

Tj = 25°C

Tj = 100°C

Tj = 25°C

Tj = 100°C

Tj = 25°C

Tj = 100°C

Tj = 25°C

Tj = 100°C

280

0.44

0.53

0.30

0.40

400

V_R= 12V

V_R= 15V

1.1

1.3

V_F*

Forward voltage drop

I_F= 40 A

I_F= 80 A

0.42

0.33

0.55

0.46

Pulse test :* tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.20 x I_F(AV)+ 0.0032 x I_{F (RMS)}

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STPS80L15CY

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

Fig. 2: Average forward current versus ambient

temperature (δ=0.5, per diode).

PF(av)(W)

IF(av)(A)

δ = 0.2

δ = 0.5

Rth(j-a)=Rth(j-c)

δ = 0.1

δ = 0.05

δ = 1

Rth(j-a)=5°C/W

Tamb(°C)

=tp/T

IF(av) (A)

=tp/T

100

125

10 15 20 25 30 35 40 45 50 55 60

Fig. 4: Normalized avalanche power derating

versus junction temperature.

Fig. 3: Normalized avalanche power derating

versus pulse duration.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse (per diode).

Zth(j-c)/Rth(j-c)

IM(A)

600

1.0

500

0.8

400

300

200

100

Tc=25°C

δ=0.5

0.6

Tc=50°C

δ=0.2

0.4

δ=0.1

Tc=75°C

0.2

Single pulse

t(s)

δ=0.5

=tp/T

tp(s)

0.0

1E-3

1E-2

1E-1

1E+0

1E-2

1E-1

1E+0

3/5

STPS80L15CY

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

IR(mA)

C(nF)

1E+3

F=1MHz

Tj=25°C

Tj=100°C

Tj=75°C

1E+2

1E+1

Tj=25°C

1E+0

VR(V)

1E-1

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Fig. 9: Forward voltage drop versus forward

current (per diode).

IFM(A)

200

100

Tj=100°C

(typical values)

Tj=100°C

(Maximum values)

Tj=25°C

(Maximum values)

VFM(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

4/5

STPS80L15CY

PACKAGE MECHANICAL DATA

Max247

DIMENSIONS

Millimeters Inches

Min. Max. Min.

4.70 5.30

REF.

Max.

0.209

0.102

0.055

0.094

0.133

0.031

0.799

0.219

0.626

0.598

0.169

0.185

0.087

0.038

0.079

0.118

0.016

0.776

0.211

0.602

0.559

0.146

2.20

1.00

2.00

3.00

0.40

19.70

5.35

15.30

14.20

3.70

2.60

1.40

2.40

3.40

0.80

10.30

5.55

15.90

15.20

4.30

Ordering type

Marking

Package

Weight

Base qty

Delivery mode

STPS80L15CY STPS80L15CY

Max247

4.4g

Tube

Cooling method: by conduction (C)

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

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approval of STMicroelectronics.

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5/5

STPS80L15C [ETC]

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