UCC3960DR [ETC]

Analog IC ; 模拟IC\n
UCC3960DR
型号: UCC3960DR
厂家: ETC    ETC
描述:

Analog IC
模拟IC\n

模拟IC 开关 光电二极管 信息通信管理
文件: 总12页 (文件大小:191K)
中文:  中文翻译
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
D
Operates With Secondary-Side PWM  
Control  
typical operating circuit  
X
V
IN  
D
D
D
D
Receives Isolated PWM Command Through  
a Pulse-Edge-Transformer  
UCC3960  
Initial Free-Running Soft-Start Up with  
Duty-Cycle Clamping  
2
1
FB  
SS  
VDD  
REF  
8
4
FEED  
BACK  
Up to 400-kHz Synchronizable Switching  
Frequency  
High-Current FET Drive (1.5-A Sink, 0.75-A  
Source)  
SOFT  
START  
UDG–99010  
D
D
D
Overcurrent Protection  
OUT  
CS  
7
5
6
Undervoltage Lockout with 2-V Hysteresis  
Low-Current Startup  
3
RT  
FREQ  
SET  
GND  
Figure 1  
description  
The UCC3960 primary-side startup controller is a unique solution that provides all the primary-side functions  
required for a single-ended, isolated offline, switch-mode power converter that uses secondary-side PWM  
control. It is usable with a wide range of secondary circuits and is especially well suitable for systems where  
sophisticated handling of overload conditions is required.  
Secondary-side control assumes that output voltage and current measurements are interfaced directly to an  
output ground-referenced PWM stage that develops the power switch command for the supply. This digital  
PWM command can then be transmitted to the primary-side power switch through a simple and low-cost  
isolating pulse transformer. With secondary-side control, it is much easier to monitor and control the system load  
with tightly coupled analog control loops. Load-oriented features such as output current sharing and  
synchronous rectification are implemented more easily.  
The UCC3960 provides all the circuitry required on the primary side of a secondary–side controlled power  
supply. It features a free running 60-kHz to 360-kHz oscillator that is synchronizable to the secondary-side PWM  
signal and also has the ability to accept start/stop PWM commands from the isolating pulse edge transformer.  
The use of an extremely small and low-cost pulse transformer allows for higher converter bandwidth. This also  
eliminates the loop-gain variations due to initial accuracy and aging of an opto-coupler feedback element or the  
size penalty of a gate transformer. It also includes an undervoltage lockout circuit with 2-V hysteresis, a low  
current startup with active low during UVLO, a soft-start capability, a 5-V reference and a high current power  
output.  
In a non-typical use, the UCC3960 can accommodate an analog feedback signal through an opto-isolator where  
it can operate in voltage-mode control mode with primary-side peak current limiting.  
The UCC3960 and the UCC2960 are available in the 8-pin SOIC (D) and PDIP (P) packages. A 14-pin package  
version is available as UCC2961 and UCC3961 that includes additional protection features such as multimode  
overcurrent protection, volt-second clamp, programmable overvoltage and undervoltage sense lines, and the  
self-bias regulator.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
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1
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
AVAILABLE OPTIONS  
D OR P PACKAGE  
(TOP VIEW)  
PACKAGED DEVICES  
SOIC–8  
SMALL OUTLINE  
(D)  
PDIP–8  
PLASTIC DIP  
(P)  
SS  
FB  
VDD  
OUT  
GND  
CS  
1
2
3
4
8
7
6
5
TA  
RT  
–40_C to 85_C  
0_C to 70_C  
UCC2960D  
UCC3960D  
UCC2960P  
UCC3960P  
REF  
The SOIC (D) packages are available taped and reeled. Add an R  
suffix to the device type (e.g., UCC2960DR) to order quantities of  
2500 devices per reel.  
†‡  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Input voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –1.5 A / 2 A  
I(VDD)  
Input current, I  
Output current, I  
I(VDD)  
w
O
Reference current, I  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –7.5 mA  
REF  
Output voltage: REF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD+0.3 V  
Input voltage: SS, RT, CS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD+0.3 V  
FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –7.0 V to VDD+0.3 V  
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55_C to 150_C  
J
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65_C to 150_C  
stg  
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 300_C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
Unless otherwise indicated, voltages are reference to ground and currents are positive into and negative out of the specified terminals. Pulsed is  
defined as a less than 10% duty cycle with a maximum duration of 500 µs.  
w 4 nF load with 4-series resistor.  
2
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
electrical characteristics V  
= 12 V, RT = 53.3 k, C  
= 1 µF, C  
= 0.1 mF, C  
= 0.01 µF,  
DD  
VDD  
REF  
SS  
R
= 4 , C  
= 1 nF and T = T (unless otherwise stated)  
OUT  
OUT  
A
J
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Supply Section (VDD)  
Clamp voltage  
I
= 10mA  
16  
17.5  
19  
2.8  
V
VDD  
Operating current  
No load,  
C
= 0  
1.8  
2.3  
mA  
µA  
OUT  
Starting current  
V
= 9V  
100  
150  
200  
DD  
Undervoltage Lockout Section  
Start threshold voltage  
Hysteresis voltage  
9.5  
1.7  
10  
2
10.5  
2.3  
V
V
Voltage Reference Section (REF)  
Reference voltage  
4.75  
8
5.0  
3
5.25  
5
V
Load regulation voltage  
Line regulation voltage  
Short-circuit current  
Soft-Start Section (SS)  
Discharge current  
I
= 0 mA to –2.5 mA  
= 10 V to 12 V  
mV  
mV  
mA  
REF  
V
3
5
DD  
10  
16  
SD = 4.5 V Pulsed  
SD = 4.5 V Pulsed  
3
–5  
5
–7  
1
7
–10  
1.1  
5.5  
5
µA  
µA  
V
Charge current  
Low–threshold voltage  
Clamp threshold voltage  
ON resistance  
0.9  
4.5  
2.5  
5
V
V
= 7.5 V  
3.3  
kΩ  
DD  
Current Sense Section (CS)  
Pulse–by–pulse  
Immediate  
0.9  
1.3  
1
1.1  
1.5  
0.2  
140  
V
V
Threshold voltage  
1.4  
Input bias current  
CS = 1.1 V pulsed  
µA  
ns  
Delay time CS to OUT  
ON resistance  
60  
100  
800  
600  
1000  
Oscillator Section  
Frequency  
135  
150  
0.02  
0%  
165  
0.2  
kHz  
%/V  
Frequency change with voltage  
Minimum duty cycle  
Maximum duty cycle  
Output Section (OUT)  
Low-level output voltage  
High-level output voltage  
Low-level output voltage during UVLO  
Rise time  
VDD = 10 V to 12 V  
69%  
72%  
75%  
I
I
I
= 100 mA (dc),  
= –40 mA (dc) ,  
= 20 mA (dc),  
See Note 1  
See Note 2  
0.7  
1.0  
1.0  
1.5  
60  
V
V
OUT  
OUT  
OUT  
0.56  
V
DD  
= 7.5V  
V
30  
15  
ns  
ns  
Fall time  
30  
NOTES: 1. OUT low, nominal of 0.7 V reflects the 3-DMOS ON resistance plus 4-R  
.
SERIES  
2. OUT high (VDD – OUT) nominal of 0.56 V reflects the 10-W HVPMOS ON resistance plus 4-R  
SERIES  
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
electrical characteristics V  
= 12 V, RT = 53.3 k, C  
= 1 µF, C  
= 0.1 mF, C = 0.01 µF,  
SS  
DD  
VDD  
REF  
R
= 4 , C  
= 1 nF and T = T (unless otherwise stated)  
OUT  
OUT  
A
J
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Feedback Section (FB)  
Input bias current  
FB = 4.5 V,  
SS = 0 V  
0.4  
–7.6  
100  
120  
µA  
V
Negative compliance voltage  
Delay time, FB–SS to OUT, rising edge  
Delay time, FB–SS to OUT, falling edge  
I
= –100 mA,  
SS = 0 V  
FB = SS  
FB = SS  
–6.8  
–7.2  
FB  
FB–SS pulsed = 2 V,  
FB–SS pulsed = 2 V,  
40  
50  
70  
85  
ns  
ns  
Terminal Functions  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
CS  
FB  
5
2
I
I
Pulse-by-pulse and shutdown overcurrent sense input pin  
Control input for the signal from a secondary–side PWM  
controller  
GND  
OUT  
RT  
6
7
3
4
1
8
Ground for the IC.  
O
I
Drive pin for the MOSFET power switch  
Sets the free-running startup oscillator frequency.  
Output reference  
REF  
SS  
O
I
Primary-side soft-start function  
Power input connection  
VDD  
detailed descriptions  
current sense (CS)  
This is the pulse-by-pulse and shutdown overcurrent sense input pin. This current-sense pin triggers a  
pulse-by-pulse termination anytime a 1.0-V threshold is exceeded while a signal in excess of 1.375 V on this  
pin initiates a complete shutdown. Since the CS pin can be noise sensitive, it is good practice to insert a small  
low-pass RC filter between this pin and the current sensor.  
feedback (FB)  
This is the control input for the signal from a secondary-side PWM controller whose pulse-width command has  
been differentiated by the feedback pulse edge transformer (PET) into positive start and negative stop pulses.  
These signals are used to turn on and off the primary power switch and must have an amplitude of at least  
V
± 2.0 V (4 V peak-to-peak) for at least 25 ns per pulse and no more than 200 ns per pulse. The maximum  
SS  
amplitude allowed on this pin is V ± 7.0 V.  
SS  
output drive (OUT)  
This drive pin for the N–channel MOSFET power switch sinks (1.5 A) and sources (0.75 A) fast, high-current  
gate drive pulses. During shutdown, this pin is self–biased to an active low state. A minimum of 4 W should  
be added in series with the output to ensure that the on-chip driver safe operating area is not exceeded. (Data  
from the IRF820/830/840 family of MOSFETs, commonly available in the TO–220 package, is used to derive  
this value. The gate charge needed to provide full enhancement was used to establish an equivalent  
capacitance of up to 4000 pF.)  
4
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
detailed descriptions (continued)  
ground (GND)  
This pin is the reference point for grounding all analog functions and must be kept as clean as possible from  
all switching noise. It should be closely bypassed to VDD.  
timing resistor (RT)  
A resistor from this pin to GND establishes a current,  
2 V  
RT  
I
+
SET  
(1)  
which is mirrored internally for several functions. It establishes the free–running startup switching frequency with  
an internal capacitor according to the relationship,  
9
8.0   10  
fs +  
RT  
(2)  
The startup oscillator has a rise and fall time set to limit the duty-cycle of the power switch to a maximum of 72%,  
a limit that is maintained even after the feedback signal takes command. The range of RT is 22.2 kto 133 k,  
giving a free-run frequency range range of 60 kHz to 360 kHz, respectively. Variations in the free-running  
oscillator frequency overtemperature are very small. The typical temperature coefficient is –40 Hz per degree  
Celsius, measured at 150 kHz.  
voltage reference (REF)  
This 5-V output is usable with external loads of up to 10 mA. The voltage is also the source for all internal analog  
threshold settings and should be bypassed with a minimum of 0.1-µF capacitance to GND.  
soft-start (SS)  
The pin implements the primary-side soft-start function. This is the connection point for an external capacitor  
that determines the rate of increase in commanded pulse width for the power switch at startup. It also serves  
as the ac ground return for the feedback pulse transformer to provide a tracking bias for the FB input.  
power (VDD)  
The power input connection for all the control circuitry conducts all the gate charge current for the power FET.  
It should be closely bypassed with at least 1.0-µF to GND. This pin is internally shunt regulated to clamp at  
17.5 V to protect the internal components. So if a voltage source above this value is possible, external current  
limiting must be provided.  
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
UVLO  
SOFT  
START LATCH  
S/D  
10 V / 8 V  
5.0V  
8
4
VDD  
1V  
Q
Q
R
S
REF  
GEN  
VREF  
OUT  
CS  
17 V  
PWM  
LATCH  
STOP  
PWM DRIVE  
+
1 V  
7
5
R
Q
FB  
2
START  
S
Q
5 V  
+
SD  
1.375 V  
1 V  
CURRENT  
LIMIT  
ISS  
S/S  
PWM  
SS  
RT  
1
3
HI  
LO  
5 V  
1.0 V  
2 ISS  
SYNC MAX D/C  
OSCILL  
RAMP  
CLK  
CT  
GND  
6
UDG–00159  
Figure 1. UCC3960 Block Diagram  
DETAILED DESCRIPTION  
startup oscillator  
The RT pin is connected to an internal 2.0 V nominal, unity-gain closed-loop amplifier that is referenced to a  
voltage divider off the 5.0-V reference. When a 22.2-kresistor is connected from the RT pin to GND an  
approximate I  
= 90 mA internal current is realized that charges the internal oscillator capacitor, approximately  
RT  
58 pF. I = 90 mA produces a maximum free running oscillator frequency of 360 kHz at a 70% duty cycle.  
RT  
When a 133.3-kresistor is connected from the RT pin to GND an approximate I = 15 mA internal current  
RT  
is realized, which produces a minimum free running oscillator frequency of 60 kHz at approximately 72% duty  
cycle. This maximum duty cycle is setup by on-chip MOSFET current mirrors that are not programmable.  
Any frequency between these two limits (6:1 maximum to minimum frequency) is obtainable by linearly scaling  
the RT resistance between the minimum 22.2-kand maximum 133.3-kvalues. The secondary-side PWM  
frequency should be fixed at (1 / 0.9) or 1.11 times the user programmed primary-side free running oscillator  
frequency for proper primary-side synchronization. Therefore, in all cases the recommended secondary-side  
synchronization frequency shall be 1.11 times higher than the selected primary-side free running startup  
frequency. Taking into consideration the two extreme limits for primary-side free running startup frequency, the  
secondary-side operating frequency should be set between 400 kHz and 67 kHz.  
6
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
DETAILED DESCRIPTION  
soft-start  
The soft-start section contains all the circuitry required to produce a user programmable slowly increasing PWM  
duty cycle, starting from 0% to a maximum of 72%. The soft-start cycle is triggered either by the initial  
primary-side startup procedure or after any one of three user-programmable fault conditions and one fixed fault  
condition. The PWM duty cycle increases according to the charge rate of an user-selectable external soft-start  
capacitor, connected from the SS pin to GND. The SS capacitor is charged by a nominal 7-µA internal current  
source.  
Should the CS pin rise in voltage above 1.375 V, a soft-start cycle is triggered. The soft-start cycle disables the  
output driver OUT and holds it in the low state until the capacitor connected from the SS pin to GND is discharged  
below 1.0 V by an internal 5-µA current sink. After this discharge period, the PMW output OUT is enabled and  
the duty cycle is allowed to slowly increase as before.  
synchronization  
The SS pin and the FB pin accepts the secondary-side of a small signal synchronization transformer. A series  
blocking capacitor inserted in the primary-side of the synchronization transformer is intended to differentiate the  
square-wave gate drive output of the secondary-side PWM controller while preventing the transformer from  
saturation. The soft-start capacitor also provides an ac GND at the SS pin or the synchronization transformer  
secondary. The small signal synchronization transformer provides galvanic isolation between primary and  
secondary side and must have adequate voltage breakdown rating between the primary and secondary  
windings.  
Two comparators, with an approximate 1.0-V offset each, are connected to the FB pin to provide plus and minus  
differential voltage comparison with a 2.0-V deadband between the FB and SS pins. The 2.0-V deadband  
prevents inductive backswing of the small-signal transformer from giving false secondary-side pulse-edge  
detection.  
Enough energy must be coupled into the comparator differential inputs to ensure reliable comparator switching.  
This requires sufficient voltage overdrive above the 1.0-V comparator threshold and a specified transformer  
circuit time constant to provide a minimum synchronization pulse width.  
On receiving the first recognizable negative going voltage pulse (turnoff command) generated from the falling  
edge of the differentiated square-wave gate drive signal on the secondary-side, the PWM latch is reset and a  
synchronization latch is set. After this event, all primary-side PMW driver output is slaved to the secondary-side  
driver output in both frequency and duty cycle. The triggering of a soft-start cycle by a fault condition resets the  
synchronization latch to again allow the internal startup oscillator to control the PWM latch.  
PWM  
The PWM section consists of a reset dominant SR latch with necessary logical gating on the set input to allow  
control from the free running startup oscillator until feedback from the secondary-side PWM gate drive output  
is detected. After the occurrence of detectable feedback from the secondary-side gate driver, the control of the  
primary-side PWM latch is handed off to the secondary-side PWM controller. A nine-input OR gate on the PWM  
latch reset dominant input allows the numerous fault conditions to reset the PWM latch and control from either  
the startup oscillator or feedback from the secondary-side PWM output driver.  
7
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DETAILED DESCRIPTION  
UVLO and REF  
The under voltage lockout (UVLO) circuit enables normal operation after VDD exceeds the 10.0-V turnon  
threshold and permits operation until VDD falls below the 8-V turnoff threshold. While activated, the UVLO circuit  
holds the PWM gate driver output (OUT) and the internal-reference buffer amplifier output REF low. To insure  
proper soft-start, internal N-channel MOSFET switches discharge external capacitor connected to the SS pin  
during undervoltage conditions.  
The 5-V internal reference is connected to the REF pin and must be bypassed using a good quality,  
high-frequency capacitor. This 5-V reference is not available externally while the chip is disabled by the under  
voltage lockout circuit.  
current sense  
The current sense (CS) circuit monitors the voltage across a ground referenced current sense resistor,  
connected between the source of the external power MOSFET and GND. The signal amplitude at the CS pin  
is compared to two thresholds, (1.0 V and 1.375 V respectively), by two independent voltage comparators.  
A voltage level greater than 1.0 V, but less than 1.375 V, sets the reset dominant shutdown latch and resets the  
PWM latch. The SD latch is reset when the startup oscillator arrives at its 4.0-V threshold.  
During the OFF period of the PWM latch, any capacitance connected to the CS pin is discharged to GND  
potential by an internal 800-device.  
VDD clamp  
To insure that the absolute maximum voltage ratings of internal devices are not violated, an internal shunt  
voltage regulator is provided to clamp the VDD pin at a nominal 17.5-V maximum voltage. Similarly to other  
shunt or Zener-like voltage regulator circuits, the current through the internal VDD clamp must be limited below  
the maximum current level indicated in the datasheet. In addition to limiting the current through the clamp circuit,  
the maximum power dissipation capability of the particular package used in the application has to be  
considered.  
OUT driver  
An internal output driver (OUT) is provided to drive the gate of an external N–channel power MOSFET. The  
output driver consists of a nominal 4.0-ON-resistance P-channel MOSFET for turnon, and a nominal 2.0-Ω  
ON-resistance D–channel MOSFET used during the turn–off of the external MOSFET transistor. An external  
series gate resistance is specified to maintain an acceptable SOA (Safe Operating Area) for the DMOS device  
of the internal output driver. As discussed in the UVLO section before, the under voltage lockout (UVLO) circuit  
holds the PWM gate driver output low while UVLO conditions exists.  
8
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
APPLICATION INFORMATION  
The evaluation circuit of the UCC3960 as the primary-side startup circuit and UC38C45 as the secondary-side  
controller is shown in Figure 2.  
UP4–101  
MUR610  
OUT  
V
IN  
470 F  
F
470  
10  
MUR110  
4.7 k  
IRF530  
12 V  
UCC38C45  
VREF COMP 1  
0.1 F 36 k  
36 k  
1 k  
8
7
6
5
VDD  
OUT  
GND  
FB  
CS  
RT  
2
3
4
0.5  
10k  
4.7 F  
6.8 k  
1000 pF  
1000 pF  
0.1 F  
12 V  
UCC3960  
2.7 nF  
8
7
VDD  
OUT  
SS  
FB  
1
2
200  
L = 5.4 H  
M
1 F  
RT 80 k  
6
5
GND ISET  
CS REF  
3
4
1 F  
300  
100 pF  
0.1 F  
UDG–99099  
Figure 2. Evaluation Circuit UCC3960  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
APPLICATION INFORMATION  
pulse-edge transmission circuit  
The UCC3960 uses a pulse-edge-transmission (PET) circuit to transmit isolated gate-pulse information from  
the secondary-side controller. It is important for the PET circuitry to have proper frequency response and  
adequately high damping (low Q-factor) in order to precent excessive overshoot. The circuit is shown in  
Figure 3.  
25 ns < T < 200 ns  
C1  
R1  
VFB  
FB  
UCC3960  
SS  
1
4
+
V2P  
0
R2  
VSS+1.0  
VSS  
VSS–1.0  
t
SECONDARY  
GATE PULSE  
C
SS  
L
M
25 ns < T < 200 ns  
UDG–99097  
Figure 3. Pulse Edge Transmission (PET) Circuit  
The pulse width measured at the FB pin must be less than 25 ns when measured at 1 V above the soft-start  
voltage and 200 ns when measured at 1 V below the soft-start voltage. The feedback (FB) voltage must not be  
overdriven by more than 5 V above or 5 V below the soft-start voltage. In order to prevent false triggering, the  
feedback voltage must not ring below the soft-start voltage by more than ±0.9 V. This can be met if the PET  
circuit has a resonant frequency of 880 kHz and a Q of 0.25. The following values meet those specifications  
for a 12-V segondary gate pulse signal, over the full range of UCC3960 operating frequencies.  
T1  
R1  
C1  
R2  
1:1 turns ratio, LM = 5.4-µH, Ferronics 11–622J, N1 = N2 = 4 turns  
300 Ω  
2700 pF  
200 Ω  
Pulse-edge-transmission (PET) circuits in standard surface-mount packages are available from Pulse  
Engineering (Part #PA0128, Part #PA0115) and from Cooper Electronic Technologies (Coiltronix),  
(Part #CTX01–15157).  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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SLUS430A – APRIL 1999 – REVISED DECEMBER 2000  
PARAMETER MEASUREMENT INFORMATION  
OPERATING WAVEFORMS  
DURING OVERLOAD  
NORMAL OPERATING WAVEFORMS  
Figure 4  
Figure 5  
OPERATING WAVEFORMS  
DURING NO LOAD  
Figure 6  
ADDITIONAL REFERENCES  
1. Dennis, Mark and Michael Madigan, 50-W Forward Converter with Synchronous Rectification and  
Secondary-Side Control, SEM–1300, Topic 4, Texas Instruments Literature Number SLUP002.  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
Customers are responsible for their applications using TI components.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Mailing Address:  
Texas Instruments  
Post Office Box 655303  
Dallas, Texas 75265  
Copyright 2001, Texas Instruments Incorporated  

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