WED3DG647V-D1 [ETC]

SDRAM Modules - 144 Pin SO-DIMM. Unbuffered ; SDRAM模块 - 144针SO-DIMM 。无缓冲\n
WED3DG647V-D1
型号: WED3DG647V-D1
厂家: ETC    ETC
描述:

SDRAM Modules - 144 Pin SO-DIMM. Unbuffered
SDRAM模块 - 144针SO-DIMM 。无缓冲\n

动态存储器
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WED3DG647V-D1  
64MB- 8Mx64 SDRAM UNBUFFERED  
FEATURES  
DESCRIPTION  
n PC100 and PC133 compatible  
n Burst Mode Operation  
The WED3DG647V is a 8Mx64 synchronous DRAM module  
which consists of eight 8Mx8 SDRAM components in TSOP- 11  
package, and one 2K EEPROM in an 8- pin TSSOP package for  
Serial Presence Detect which are mounted on a 144 Pin SO-  
DIMM multilayer FR4 Substrate.  
n Auto and Self Refresh capability  
n LVTTL compatible inputs and outputs  
n Serial Presence Detect with EEPROM  
n Fully synchronous: All signals are registered on the positive  
edge of the system clock  
n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page  
n 3.3 volt 6 0.3v Power Supply  
n 144- Pin SO-DIMM JEDEC  
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)  
PIN NAMES  
Pin  
1
3
Front  
VSS  
DQ0  
DQ1  
DQ2  
DQ3  
VDD  
DQ4  
DQ5  
DQ6  
DQ7  
VSS  
DQM0  
DQM1  
VDD  
A0  
Pin  
2
4
Back  
VSS  
Pin  
51  
53  
55  
57  
59  
Front  
DQ14  
DQ15  
VSS  
NC  
Pin  
52  
54  
56  
58  
60  
Back  
DQ46  
DQ47  
VSS  
NC  
Pin  
95  
97  
Front  
DQ21  
DQ22  
DQ23  
VDD  
Pin  
96  
98  
Back  
DQ53  
DQ54  
DQ55  
VDD  
A0 – A11  
BA0-1  
DQ0-63  
CLK0,CLK1  
CKE0  
CS0  
RAS  
CAS  
WE  
DQM0-7  
VDD  
Address input (Multiplexed)  
Select Bank  
DQ32  
DQ33  
DQ34  
DQ35  
VDD  
Data Input/Output  
Clock input  
5
7
6
8
99  
100  
102  
104  
106  
108  
110  
112  
114  
116  
118  
120  
122  
124  
126  
128  
130  
132  
134  
136  
138  
140  
142  
144  
101  
103  
105  
107  
109  
111  
113  
115  
117  
119  
121  
123  
125  
127  
129  
131  
133  
135  
137  
139  
141  
143  
Clock Enable input  
Chip select Input  
Row Address Strobe  
ColumnAddress Strobe  
Write Enable  
DQM  
Power Supply (3.3V)  
Ground  
9
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
42  
44  
46  
48  
50  
NC  
NC  
A6  
A8  
A7  
BA0  
11  
13  
15  
17  
19  
21  
23  
25  
27  
29  
31  
33  
35  
37  
39  
41  
43  
45  
47  
49  
VOLTAGE KEY  
DQ36  
DQ37  
DQ38  
DQ39  
VSS  
DQM4  
DQM5  
VDD  
VSS  
A9  
VSS  
BA1  
61  
63  
65  
67  
69  
71  
73  
75  
77  
79  
81  
83  
85  
87  
89  
91  
93  
CLK0  
VDD  
RAS  
WE  
CS0  
NC  
DNU  
VSS  
NC  
62  
64  
66  
68  
70  
72  
74  
76  
78  
80  
82  
84  
86  
88  
90  
92  
94  
CKE0  
VDD  
CAS  
NC  
A10/AP  
VDD  
A11  
VDD  
DQM2  
DQM3  
VSS  
DQM6  
DQM7  
VSS  
VSS  
SDA  
SCL  
DNU  
NC  
Serial data I/O  
Serial clock  
Do not use  
NC  
DQ24  
DQ25  
DQ26  
DQ27  
VDD  
DQ28  
DQ29  
DQ30  
DQ31  
VSS  
DQ56  
DQ57  
DQ58  
DQ59  
VDD  
DQ60  
DQ61  
DQ62  
DQ63  
VSS  
A3  
CLK1  
VSS  
NC  
A1  
A2  
A4  
A5  
NC  
No Connect  
VSS  
DQ8  
DQ9  
DQ10  
DQ11  
VDD  
DQ12  
DQ13  
VSS  
NC  
NC  
DQ40  
DQ41  
DQ42  
DQ43  
VDD  
VDD  
DQ16  
DQ17  
DQ18  
DQ19  
VSS  
DQ20  
VDD  
DQ48  
DQ49  
DQ50  
DQ51  
VSS  
DQ52  
** These pins should be NC in the system which  
does not support SPD.  
DQ44  
DQ45  
**SDA  
VDD  
**SCL  
VDD  
White Electronic Designs Corp reserves the right to change products or specifications without notice.  
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com  
June 2003 Rev. 1  
ECO #16372  
1
WED3DG647V-D1  
FUNCTIONAL BLOCK DIAGRAM  
U5  
SERIAL  
PD  
EEPROM  
White Electronic Designs Corp reserves the right to change products or specifications without notice.  
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com  
2
June 2003 Rev. 1  
ECO #16372  
WED3DG647V-D1  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
VIN, Vout  
VDD, VDDQ  
TSTG  
Value  
-1.0 ~ 4.6  
-1.0 ~ 4.6  
-55 ~ +150  
8
Units  
V
V
°C  
W
Voltage on any pin relative to VSS  
Voltage on VDD supply relative to VSS  
Storage Temperature  
Power Dissipation  
PD  
Short Circuit Current  
IOS  
50  
mA  
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.  
Functional operation should be restricted to recommended operating condition.  
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)  
Parameter  
Supply Voltage  
Symbol  
VDD  
VIH  
Min  
3.0  
2.0  
-0.3  
2.4  
—
Typ  
3.3  
Max  
3.6  
Unit  
V
V
V
V
Note  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
3.0 VDDQ+0.3  
1
2
VIL  
—
—
—
—
0.8  
—
0.4  
10  
VOH  
VOL  
ILI  
IOH= -2mA  
IOL= -2mA  
3
V
µA  
-10  
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is £ 3ns.  
2. VIL (min)= -2.0V AC. The undershoot voltage duration is £ 3ns.  
3. Any input 0V £ VIN £ VDDQ  
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State  
outputs.  
CAPACITANCE  
(TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4V 6200mV)  
Parameter  
Symbol  
CIN1  
CIN2  
CIN3  
CIN4  
CIN5  
CIN6  
CIN7  
Cout  
Min  
Max  
45  
45  
25  
21  
25  
12  
45  
12  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
Input Capacitance (A0-A12)  
Input Capacitance (RAS,CAS,WE)  
Input Capacitance (CKE0)  
Input Capacitance (CLK0,CLK1)  
Input Capacitance (CS0)  
Input Capacitance (DQM0-DQM7)  
Input Capacitance (BA0-BA1)  
Data input/output capacitance (DQ0-DQ63)  
-
-
-
-
-
-
-
-
White Electronic Designs Corp reserves the right to change products or specifications without notice.  
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com  
June 2003 Rev. 1  
ECO #16372  
3
WED3DG647V-D1  
OPERATING CURRENT CHARACTERISTICS  
(VCC = 3.3V, TA = 0°C to +70°C)  
Version  
Parameter  
Operating Current  
(One bank active)  
Symbol  
ICC1  
Conditions  
Burst Length = 1  
tRC ³ tRC(min)  
133  
300  
100  
280  
Units Note  
mA  
1
IOL = 0mA  
Precharge Standby Current  
in Power Down Mode  
ICC2P  
ICC2PS  
Icc2N  
CKE £VIL(max), tCC = 10ns  
CKE & CLK £ VIL(max), tCC = ¥  
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns  
Input signals are charged one time during 20  
CKE ³ VIH(min), CLK £VIL(max), tcc = ¥  
Input signals are stable  
CKE ³ VIL(max), tCC = 10ns  
CKE & CLK £ VIL(max), tcc = ¥  
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns  
Input signals are changed one time during 20ns  
CKE ³ VIH(min), CLK £VIL(max), tcc = ¥  
input signals are stable  
5
5
mA  
Precharge Standby Current  
in Non-Power Down Mode  
60  
Icc2NS  
mA  
mA  
25  
15  
15  
Active standby current in  
power-down mode  
ICC3P  
ICC3PS  
ICC3N  
Active standby current in  
non power-down mode  
120  
100  
mA  
mA  
mA  
ICC3NS  
ICC4  
Io = mA  
Page burst  
4 Banks activated  
tCCD = 2CLK  
tRC ³ tRC(min)  
CKE £ 0.2V  
Operating current (Burst mode)  
460  
540  
380  
500  
1
2
Refresh current  
Self refresh current  
ICC5  
ICC6  
mA  
mA  
5
Notes: 1. Measured with outputs open.  
2. Refresh period is 64ms.  
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)  
White Electronic Designs Corp reserves the right to change products or specifications without notice.  
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com  
4
June 2003 Rev. 1  
ECO #16372  
WED3DG647V-D1  
ORDERING INFORMATION  
Part Number  
Speed  
Cas Latency  
CL=2  
WED3DG647V10D1  
WED3DG647V7D1  
WED3DG647V75D1  
100MHz  
133MHz  
133MHz  
CL=2  
CL=3  
Note: For industrial temperature range product, add an "I" to the end of the part  
number.  
PACKAGE DIMENSIONS  
ALL DIMENSIONS ARE IN INCHES  
White Electronic Designs Corp reserves the right to change products or specifications without notice.  
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com  
June 2003 Rev. 1  
ECO #16372  
5

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