XN01501|XN1501 [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XN01501|XN1501 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总3页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN01501 (XN1501)
Silicon NPN epitaxial planar type
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
For general amplification
+0.10
–0.06
0.16
3
2
4
5
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
1
• Reduction of the mounting area and assembly cost by one half
+0.10
–0.05
0.30
10˚
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
60
50
7
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
4: Emitter
5: Base (Tr1)
V
V
EIAJ: SC-74A
Mini5-G1 Package
Collector current
IC
ICP
PT
100
200
mA
mA
mW
°C
Marking Symbol: 5R
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
300
Internal Connection
Tj
150
3
Tr2
2
4
5
Tstg
−55 to +150
°C
Tr1
1
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
hFE ratio *
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
460
µA
µA
ICEO
hFE
160
hFE(Small/ VCE = 10 V, IC = 2 mA
Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
150
3.5
0.3
V
MHz
pF
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003
SJJ00028BED
1
XN01501
PT Ta
IC VCE
IC IB
240
200
160
120
80
60
50
40
30
20
10
0
500
400
300
200
100
0
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
40
20 µA
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
0
40
80
120
160
)
Base current IB (mA
(
)
V
Collector-emitter voltage VCE
(
)
Ambient temperature Ta °C
IB VBE
IC VBE
VCE(sat) IC
102
10
1.2
1.0
0.8
0.6
0.4
0.2
0
240
200
160
120
80
IC / IB = 10
VCE = 10 V
VCE = 10 V
Ta = 25°C
25°C
1
Ta = 75°C
−25°C
25°C
10−1
Ta = 75°C
40
−25°C
10−2
10−1
0
1
10
102
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
(
)
(
)
Base-emitter voltage VBE
V
Collector current IC mA
(
)
V
Base-emitter voltage VBE
hFE IC
fT IE
NV IC
600
500
400
300
200
100
0
300
240
180
120
60
240
200
160
120
80
VCE = 10 V
VCB = 10 V
Ta = 25°C
VCE = 10 V
GV = 80 dB
Function = FLAT
Ta = 25°C
Ta = 75°C
25°C
Rg = 100 kΩ
−25°C
22 kΩ
4.7 kΩ
40
0
0
10
10−1
1
10
102
−10−1
–1
–10
–102
102
Collector current IC µA
103
(
)
(
)
Emitter current IE mA
(
)
Collector current IC mA
SJJ00028BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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