FS100R12KT3 [EUPEC]
IGBT-Module; IGBT -模块
| 型号： | FS100R12KT3 |
| 厂家： | 
EUPEC GMBH |
| 描述： | IGBT-Module |
| 文件： | 总8页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
100
140
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
200
480
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 100 A, V•Š = 15 V, TÝÎ = 25°C
I† = 100 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,70 2,15
1,90
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 4,00 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,90
7,5
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
7,10
0,30
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,26
0,29
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C
0,03
0,05
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,42
0,52
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C
0,07
0,09
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 100 A, V†Š = 600 V, L» = 70 nH
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C
EÓÒ
EÓËË
mJ
mJ
10,0
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 100 A, V†Š = 600 V, L» = 70 nH
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C
mJ
mJ
10,0
400
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
0,26 K/W
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
100
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
200
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
1950
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 100 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 100 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
1,65 2,15
1,65
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 100 A, - diŒ/dt = 2600 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
120
140
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 100 A, -diŒ/dt = 2600 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
10,0
20,0
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 100 A, -diŒ/dt = 2600 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
5,00
9,00
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
0,48 K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
min. typ. max.
T† = 25°C
Rèë
ÆR/R
Pèë
5,00
kÂ
%
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
-5
5
Verlustleistung
power dissipation
T† = 25°C
20,0 mW
K
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298, 15K))]
Bèëõëå
3375
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min
insulation test voltage
Vš»¥¡
2,5
Cu
kV
Material Modulgrundplatte
material of module baseplate
Material für innere Isolation
material for internal insulation
AIè0é
10,0
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
7,50
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min. typ. max.
0,009
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
LÙ†Š
K/W
nH
Modulinduktivität
stray inductance module
21
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T† = 25°C, pro Zweig / per arm
R††óôŠŠó
1,80
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
M
150
°C
°C
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
125
125
Lagertemperatur
storage temperature
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M5
3,00
-
6,00 Nm
g
Gewicht
weight
G
300
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
3
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
200
200
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
180
160
140
120
100
80
V•Š = 19V
V•Š = 17V
V•Š = 15V
V•Š = 13V
V•Š = 11V
V•Š = 9V
60
60
40
40
20
20
0
0
0,0
0,5
1,0
1,5 2,0
V†Š [V]
2,5
3,0
3,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 3,9 Â, R•ÓËË = 3,9 Â, V†Š = 600 V,
TÝÎ = 125°C
200
30
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
EÓÒ
EÓËË
25
20
15
10
5
60
40
20
0
0
5
6
7
8 9
V•Š [V]
10
11
12
0
25
50
75
100 125 150 175 200
I† [A]
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
4
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 100 A, V†Š = 600 V, TÝÎ = 125°C
30
1
EÓÒ
EÓËË
ZÚÌœ† : IGBT
25
20
15
10
5
0,1
i:
rÍ[K/W]: 0,00493
τÍ[s]:
1
2
3
4
0,01501 0,13088 0,10919
0,0000119 0,002364 0,02601 0,06499
0
0,01
0,001
0
4
8
12
16 20
R• [Â]
24
28
32
36
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C
250
200
150
100
50
200
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
60
40
I†, Modul
I†, Chip
20
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VΠ[V]
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
5
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 3,9 Â, V†Š = 600 V, TÝÎ = 125°C
IŒ = 100 A, V†Š = 600 V, TÝÎ = 125°C
14
12
EØþÊ
EØþÊ
12
10
10
8
8
6
4
2
0
6
4
2
0
0
25
50
75
100 125 150 175 200
IΠ[A]
0
4
8
12
16 20
R• [Â]
24
28
32
36
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ† = f (t)
1
ZÚÌœ† : Diode
0,1
i:
rÍ[K/W]: 0,00908
τÍ[s]:
1
2
3
4
0,02726 0,24202 0,20164
0,0000119 0,002364 0,02601 0,06499
0,01
0,001
0,01
0,1
t [s]
1
10
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
6
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
7
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
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