EFA025A [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA025A |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总3页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA025A
Excelics
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
+21.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
•
•
•
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
•
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
21
21
11
9
MAX
UNIT
Output Power at 1dB Compression
f=12GHz
f=18GHz
f=12GHz
f=18GHz
19
dBm
P1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
9
dB
%
G1dB
PAE
NF
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
38
1.5
10
Noise Figure Vds=3V,Ids=15mA
Associated Gain Vds=3V,Ids=15mA
f=12GHz
f=12GHz
dB
dB
mA
mS
V
A
G
Saturated Drain Current Vds=3V, Vgs=0V
35
30
65
105
-3.5
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
40
Vds=3V, Ids=1.0mA
-2
Vp
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
155
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
12V
CONTINUOUS2
8V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Vds
Vgs
Ids
-8V
-4V
Idss
90mA
Forward Gate Current
Input Power
6mA
1mA
Igsf
Pin
Tch
Tstg
Pt
19dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
P-1dB & PAE vs. Vds
f = 12 GHz
Ids =50% Idss
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8 V, Ids = 50% Idss
45
40
35
30
25
20
15
10
5
25
20
15
10
5
60
55
50
45
40
35
30
25
20
PAE
Pout
0
0
-15
-10
-5
0
5
10
15
20
4
5
6
7
8
9
10
Pin (dBm)
Drain-Source Voltage (V)
S-PARAMETERS
S-PARAMETERS
3V, 15mA
8V,Idss
FREQ
--- S11 ---
ANG
--- S21 ---
MAG ANG
--- S12 ---
MAG
--- S22 ---
FREQ
--- S11 ---
ANG
-14.6 4.413 167.5 0.017
0.954 -29.2 4.255 156.5 0.031
0.923 -42.9 4.083 145.2 0.044
0.898 -55.1 3.865 135.2 0.054
0.871 -66.3 3.651 125.5 0.063
0.848 -76.4 3.422 116.7 0.069
0.824 -85.7 3.203 108.7 0.074
0.811 -94.4 3.021 100.7 0.078
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG
ANG
81.5
72.7
64.8
57.1
50.5
44.0
38.1
32.4
27.4
22.2
17.6
13.3
9.3
MAG
ANG (GHz) MAG
MAG ANG
MAG
ANG
52.8
58.8
56.1
51.5
46.3
42.2
37.8
32.7
27.9
23.8
20.3
17.6
13.9
11.7
8.7
MAG
0.699
ANG
1.0
2.0
0.96
-5.5
1.0
2.0
0.995 -13.5 3.600 168.7 0.023
0.976 -26.7 3.527 158.2 0.044
0.957 -39.7 3.434 148.1 0.064
0.931 -53.0 3.313 137.7 0.081
0.906 -63.9 3.119 128.8 0.094
0.875 -74.0 2.938 120.2 0.106
0.846 -84.0 2.796 111.9 0.116
0.818 -93.6 2.625 103.9 0.124
0.606
-8.1
0.698 -12.1
0.684 -18.9
0.665 -25.3
0.644 -31.6
0.625 -37.4
0.608 -43.0
0.595 -48.7
0.577 -54.0
0.564 -58.7
0.553 -63.4
0.541 -67.9
0.531 -72.3
0.517 -76.9
0.506 -82.2
0.496 -88.9
0.477 -96.8
0.465 -106.0
0.462 -115.8
0.465 -127.1
0.473 -138.2
0.489 -148.5
0.519 -156.4
0.555 -163.8
0.578 -170.1
0.603 -173.3
0.595 -15.9
0.569 -24.3
0.544 -33.3
0.536 -41.2
0.512 -48.3
0.496 -57.0
0.484 -64.2
0.475 -69.6
0.456 -75.0
0.448 -81.0
0.429 -86.0
0.432 -92.2
0.444 -93.6
0.432 -93.1
0.399 -99.1
0.400 -107.7
0.397 -110.9
0.376 -117.7
3.0
4.0
3.0
4.0
5.0
5.0
6.0
7.0
6.0
7.0
8.0
8.0
9.0
0.785 -102.5 2.81
0.77 -109.7 2.639
0.762 -116.6 2.49
0.756 -123.4 2.358
0.757 -129.6 2.239
0.756 -135.5 2.136
0.761 -140.7 2.051
0.762 -146.0 1.965
0.763 -150.2 1.891
0.766 -154.6 1.837
0.762 -158.5 1.775
93.5
87.0
80.6
74.1
68.2
62.2
56.3
50.0
44.2
38.0
31.4
24.6
18.2
12.8
7.9
0.08
0.079
0.08
0.079
0.081
0.08
0.079
0.082
0.084
0.087
0.089
0.092
0.093
0.093
0.093
0.097
0.101
0.103
9.0
0.797 -102.4 2.468
0.781 -110.6 2.330
0.762 -119.0 2.206
0.752 -127.5 2.075
0.749 -134.0 1.940
0.747 -138.4 1.825
0.745 -142.8 1.763
0.738 -150.1 1.728
0.729 -157.5 1.648
0.727 -163.1 1.574
0.729 -167.9 1.532
0.718 -173.0 1.482
0.709 -175.0 1.429
0.709 178.6 1.365
0.706 173.1 1.295
0.714 166.8 1.211
0.735 162.8 1.147
0.738 161.3 1.056
96.8
90.0
83.1
76.5
70.6
65.8
61.5
55.4
49.0
43.9
38.6
32.5
28.1
22.5
16.6
11.0
6.6
0.129
0.133
0.137
0.139
0.138
0.137
0.140
0.145
0.147
0.147
0.150
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
6.7
4.3
7.9
0.7
5.2
3.9
-3.4
-6.1
-8.7
1.7
0.751 -162.4
1.7
-0.7
-3.3
-3.1
-0.8
-0.2
2.4
0.152 -12.3 0.386 -129.5
0.153 -14.5 0.393 -134.4
0.153 -17.5 0.386 -142.4
0.150 -20.2 0.403 -150.8
0.145 -23.3 0.434 -158.6
0.141 -24.7 0.455 -160.4
0.132 -26.2 0.490 -165.6
0.73 -165.4 1.594
0.71 -167.8 1.52
0.707 -169.4 1.457
0.71 -171.7 1.41
0.72 -175.6 1.351
0.712 -178.1 1.29
2.5
-3.6
-7.2
3.8
2.9
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
EFA025A
Noise Parameters
Vds=3V, Ids=15mA
Freq.
(GHz)
2
Popt
(ANG)
17
Nfmin
(dB)
0.53
0.65
0.85
1.05
1.35
1.55
1.90
2.25
2.60
2.90
3.20
3.50
3.80
(MAG)
0.71
0.67
0.81
0.71
0.65
0.70
0.65
0.61
0.70
0.65
0.64
0.69
0.70
Rn/50
0.58
0.52
0.49
0.44
0.38
0.34
0.29
0.25
0.17
0.15
0.12
0.08
0.05
4
35
6
48
8
63
10
12
14
16
18
20
22
24
26
79
95
105
120
135
145
153
164
175
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