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EIB1213-4P [EXCELICS]

12.75-13.25GHz 4W Internally Matched Power FET; 12.75-13.25GHz 4W内部匹配功率场效应管
EIB1213-4P
型号： EIB1213-4P
厂家： EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述：

12.75-13.25GHz 4W Internally Matched Power FET
12.75-13.25GHz 4W内部匹配功率场效应管
文件： 总1页 (文件大小：85K)
中文：  中文翻译
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EIB1213-2P  
UPDATED 06/14/06  
12.75-13.25GHz 2W Internally Matched Power FET  
FEATURES  
•
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•
•
•
•
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12.75-13.25 GHz Bandwidth  
EIB1213-2P  
Input/Output Impedance Matched to 50 Ohms  
+33.0 dBm Output Power at 1dB Compression  
8.5 dB Power Gain at 1dB Compression  
25% Power Added Efficiency  
-46 dBc IM3 at PO = 22.0 dBm SCL  
Non-Hermetic Metal Flange Package  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Caution! ESD sensitive device.  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
DS = 8 V, IDSQ ≈ 800mA  
f = 12.75-13.25GHz  
32.0  
33.0  
dBm  
V
Gain at 1dB Compression  
VDS = 8 V, IDSQ ≈ 800mA  
Gain Flatness  
f = 12.75-13.25GHz  
f = 12.75-13.25GHz  
7.50  
8.50  
dB  
dB  
G1dB  
±0.6  
960  
∆G  
VDS = 8 V, IDSQ ≈ 800mA  
Power Added Efficiency at 1dB Compression  
VDS = 8 V, IDSQ ≈ 800mA  
25  
%
PAE  
Id1dB  
f = 12.75-13.25GHz  
f = 12.75-13.25GHz  
Drain Current at 1dB Compression  
850  
mA  
Output 3rd Order Intermodulation Distortion  
∆f = 10 MHz 2-Tone Test; Pout = 22.0 dBm S.C.L2  
-43  
-46  
dBc  
IM3  
VDS = 8 V, IDSQ ≈ 65% IDSS  
f = 13.25GHz  
Saturated Drain Current  
VDS = 3 V, VGS = 0 V  
1360  
-2.5  
8.0  
1700  
-3.5  
9.0  
mA  
V
oC/W  
IDSS  
VP  
Pinch-off Voltage  
Thermal Resistance3  
VDS = 3 V, IDS = 12 mA  
RTH  
Note: 1) Tested with 100 Ohm gate resistor.  
2) S.C.L. = Single Carrier Level.  
3) Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
CONTINUOUS2  
Drain-Source Voltage  
10V  
-5  
8V  
-4V  
Vds  
Gate-Source Voltage  
Forward Gate Current  
Reverse Gate Current  
Input Power  
Vgs  
21.6mA  
-3.6mA  
32.0dBm  
175 oC  
7.2mA  
Igsf  
-1.2mA  
Igsr  
@ 3dB Compression  
175 oC  
Pin  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
-65 to +175 oC  
-65 to +175 oC  
Tstg  
16W  
16W  
Pt  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 1  
Revised June 2006  

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