BSV52L99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BSV52L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSV52
C
E
SOT-23
Mark: B2
B
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VEBO
IC
Collector-Emitter Voltage
12
20
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BSV52
PD
Total Device Dissipation
Derate above 25 C
225
1.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
556
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NPN Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
I = 10 A, I = 0
12
20
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
µ
C
E
5.0
V
I = 100 A, I = 0
µ
E
C
VCB = 10 V, IE = 0
VCB = 10 V, I = 0, T = 125 C
100
5.0
nA
A
µ
°
E
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 0.3 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
25
40
25
120
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.3
0.25
0.4
0.85
1.2
V
VCE(sat)
V
V
V
V
0.7
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
IC = 10 mA, VCE = 10 V,
f = 100 MHz
400
MHz
fT
Collector-Base Capacitance
Emitter-Base Capacitance
IE = 0, VCB = 5.0 V, f = 1.0 MHz
4.0
4.5
pF
pF
Ccb
Ceb
IC = 0, VEB = 1.0 V, f = 1.0 MHz
3
SWITCHING CHARACTERISTICS
Storage Time
IB1 = IB2 = IC = 10 mA
13
12
ns
ns
ts
Turn-On Time
VCC = 3.0 V, IC = 10 mA,
ton
I
B1 = 3.0 mA
VCC = 3.0 V, IC = 10 mA,
B1 = 3.0 mA, IB2 = 1.5 mA
Turn-Off Time
18
ns
toff
I
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
NPN Switching Transistor
(continued)
Typical Characteristics
DC Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
200
0.5
0.4
0.3
0.2
0.1
0
β = 1 0
VCE = 1.0V
150
125 °C
100
25 °C
125 °C
25 ° C
50
- 40 °C
- 40 °C
0.1
1
10
100
500
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1.4
1.2
1
β = 10
- 40°C
25 °C
125 °C
- 40 °C
0.8
0.6
0.4
25 °C
V
= 1.0V
CE
125 °C
0.1
1
10
100 300
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
600
100
VCB= 20V
10
1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE ( C)
°
NPN Switching Transistor
(continued)
Typical Characteristics (continued)
Output Capacitance vs
Reverse Bias Voltage
Switching Times vs
Collector Current
5
100
50
F = 1.0MHz
V
= 3.0 V
CC
I
= 10 I = I = 10
B1
B2
C
4
C ibo
20
10
5
3
tr
C obo
tf
2
1
0
ts
2
1
t
d
2
5
10
20
50
100
300
0.1
0.5
1
5
10
50
I C - COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (V)
Storage Time vs Turn On
Switching Times vs
and Turn Off Base Currents
Ambient Temperature
-12
-10
-8
12
I
= 10 mA
C
tf
V
= 3.0 V
10
8
CC
ts
3
ts= 3.0 ns
6
-6
td
tr
4.0 ns
4
-4
2
-2
6.0 ns
I
= 10 mA, I = 3.0 mA, I = 1.5 mA, V = 3.0 V
B1
CC
B2
C
0
0
25
50
75
100
0
2
4
6
8
10
T
- AMBIENT TEMPERATURE ( C)
A
I B1 - TURN ON BASE CURRENT (mA)
°
Storage Time vs Turn On
Storage Time vs Turn On
and Turn Off Base Currents
and Turn Off Base Currents
-12
-10
-8
-30
-25
-20
-15
-10
-5
I
= 10 mA
C
I
= 100 mA
C
4.0 ns
V
= 3.0 V
V
= 3.0 V
CC
CC
8.0 ns
t
= 3.0 ns
S
6.0 ns
ts= 3.0 ns
-6
4.0 ns
-4
16.0 ns
-2
6.0 ns
0
0
0
2
4
6
8
10
0
5
10
15
20
25
30
I B1 - TURN ON BASE CURRENT (mA)
I B1 - TURN ON BASE CURRENT (mA)
NPN Switching Transistor
(continued)
Typical Characteristics (continued)
Fall Time vs Turn On
Fall Time vs Turn On
and Turn Off Base Currents
and Turn Off Base Currents
-6
-12
-10
-8
I
= 10 mA
= 3.0 V
CC
I
= 30 mA
C
C
3.0 ns
V
V
= 3.0 V
-5
-4
-3
-2
-1
0
CC
4.0 ns
8.0 ns
10 ns
t = 2.0 ns
f
t f = 7.0 ns
-6
5.0 ns
-4
-2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
I B1 - TURN ON BASE CURRENT (mA)
IB1 - TURN ON BASE CURRENT (mA)
Delay Time vs Base-Emitter OFF
Voltage and Turn On Base Current
Fall Time vs Turn On
and Turn Off Base Currents
-30
-25
-20
-15
-10
-5
-6
-5
-4
-3
-2
-1
0
I
= 100 mA
= 3.0 V
I
V
= 10 mA
= 3.0 V
3.0 ns
C
C
4.0 ns
V
CC
CC
t d = 8.0 ns
t
f = 2.0 ns
8.0 ns
5.0 ns
4.0 ns
12.0 ns
3.0 ns
0
0
5
10
15
20
25
30
1
2
5
10
20
50
IB1 - TURN ON BASE CURRENT (mA)
I B1 - TURN ON BASE CURRENT (mA)
Rise Time vs. Turn On Base
Current and Collector Current
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
50
V
= 3.0 V
CC
tr= 2.0 ns
5.0 ns
10
1
SOT-23
20 ns
10 ns
0
0
1
10
100
500
0
25
50
75
100
125
150
IC - COLLECTOR CURRENT (mA)
TEMPERATURE (oC)
NPN Switching Transistor
(continued)
Test Circuits
+6V
10% Pulse waveform
at point ' A'
0.1 µF
91 Ω
'A'
890 Ω
1 KΩ
0
VIN
0.1 µF
0
- 4V
500 Ω
VIN
VOUT
- 10
VOUT
10%
500 Ω
56 Ω
Pulse generator
ts
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
0.0023µF
0.0023µF
Duty Cycle < 2%
+
+
10 V
10 µF
10 µF
11 V
FIGURE 1: Charge Storage Time Measurement Circuit
VOUT
0
10%
90%
220 Ω
V
IN
V
IN
V
IN
3.3 KΩ
10%
0
VOUT
50 Ω
VOUT
90%
50 Ω
3.3 KΩ
toff
toff
VBB = 12 V
VIN = - 20.9 V
ton
0.0023µF
0.0023µF
ton
0.05 µF
0.05 µF
VBB = - 3.0 V
3
To sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns
VIN = + 15.25 V
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
0.1 µF
VBB
0.1 µF
VCC = 3.0 V
FIGURE 2: tON, tOFF Measurement Circuit
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
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DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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